Transcript
PD - 94643A
HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1)
IRF7N1405 55V, N-CHANNEL
Product Summary Part Number
BVDSS
IRF7N1405
55V
RDS(on) ID 0.0053Ω 55A*
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-1
Features: n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Surface Mount
Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Units
Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range
55* 55* 220 100 0.8 ±20 245 55 10 1.8 -55 to 150
Package Mounting Surface Temp. Weight
300 (for 5s) 2.6 (Typical)
A W W/°C
V mJ A mJ V/ns o
C
g
* Current is limited by package For footnotes refer to the last page
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IRF7N1405
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS
Min
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Typ Max Units
55
—
—
V
—
0.061
—
V/°C
—
—
0.0053
Ω
2.0 68 — —
— — — —
4.0 — 25 250
V S
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
— — — — — — — — — 4.0
100 -100 200 40 80 20 90 200 150 —
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
5100 1290 300
— — —
µA
nA nC
ns
nH
l
pF
Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 55A Ã VDS = VGS, ID = 250µA VDS =25V, IDS = 55A Ã VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 55A VDS = 44V VDD = 28V, ID = 55A, VGS = 10V, RG = 2.4Ω
Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton
Min Typ Max Units
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
— — — — —
— — — — —
55* 220 1.3 130 380
Test Conditions
A V ns nC
Tj = 25°C, IS = 55A, VGS = 0V Ã Tj = 25°C, IF = 55A, di/dt ≤ 100A/µs VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance Parameter RthJC
Junction-to-Case
Min Typ Max —
—
1.25
Units
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page
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IRF7N1405
1000
1000
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
100
4.5V 20µs PULSE WIDTH Tj = 25°C
4.5V
20µs PULSE WIDTH Tj = 150°C 10
10 0.1
1
10
0.1
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current ( Α)
T J = 150°C
T J = 25°C
VDS = 25V 15 20µs PULSE WIDTH
10 4
4.5
5
5.5
6
6.5
7
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
100
1
VDS , Drain-to-Source Voltage (V)
ID = 55A
2.0
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = 10V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF7N1405
9000
6000
Ciss
4500
3000
VDS = 44V VDS = 28V VDS= 11V
ID= 55A VGS , Gate-to-Source Voltage (V)
7500
C, Capacitance (pF)
12
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Coss
1500
8
4
FOR TEST CIRCUIT SEE FIGURE 13
Crss 0
1
10
0
100
0
VDS , Drain-to-Source Voltage (V)
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current ( Α)
60
80
100
120
140
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
T J = 150°C
100
40
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
T J = 25°C
10
1
100µs
1
0.1 0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
1.6
1ms
10
VGS = 0V
4
20
Tc = 25°C Tj = 150°C Single Pulse 0.1
1
10ms
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7N1405
120
LIMITED BY PACKAGE
V GS
100
ID , Drain Current (A)
RD
V DS
D.U.T.
RG
+
-V DD
80
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
60
40
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50 0.20 0.10 0.1
PDM
0.05 0.02 0.01
0.01 0.00001
t1 t2
SINGLE PULSE (THERMAL RESPONSE)
0.0001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7N1405
15V
D.U.T.
RG
VGS 20V
DRIVER
L
VDS
+ V - DD
IAS tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
500
ID 24.6A 34.8A BOTTOM 55A TOP
400
300
200
100
0
25
tp
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS Current Regulator Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ .2µF
12V
.3µF
QG
10V
D.U.T.
QGS
+ V - DS
QGD VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF7N1405
Footnotes: Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 0.16mH Peak I AS = 55A, V GS = 10V, RG= 25Ω
ISD ≤ 55A, di/dt ≤ 220A/µs, VDD ≤ 55V, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2007
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