Transcript
PD-94337C
HEXFET® POWER MOSFET SURFACE MOUNT (SMD-2)
IRF7NA2907 75V, N-CHANNEL
Product Summary Part Number
BVDSS
IRF7NA2907
75V
RDS(on) 0.0045Ω
ID 75A*
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-2
Features: n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Units
Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range
75* 75* 300 250 2.0 ±20 500 75 25 6.4 -55 to 150
Package Mounting Surface Temp. Weight
300 (for 5s) 3.3 (Typical)
A W W/°C
V mJ A mJ V/ns o
C
g
* Current is limited by package For footnotes refer to the last page
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IRF7NA2907
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter
Min
BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Typ Max Units
Test Conditions
75
—
—
V
VGS = 0V, ID = 250µA
—
0.08
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.0045
Ω
2.0 130 — —
— — — —
4.0 — 20 250
V S
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
— — — — — — — — — 4.0
100 -100 375 60 150 40 125 175 75 —
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
12000 2280 610
— — —
l
VGS = 10V, ID = 75A Ã
µA
nA nC
ns
VDS = VGS, ID = 250µA VDS = 15V, IDS = 75A Ã VDS = 75V ,VGS=0V VDS = 60V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS = 10V, ID = 45A VDS = 60V VDD = 38V, ID = 45A, VGS = 10V, RG = 1.2Ω
nH Measured from the center of drain pad to the center of source pad
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton
Min Typ Max Units
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
— — — — —
— — — — —
75* 300 1.65 175 850
Test Conditions
A V ns nC
Tj = 25°C, IS = 75A, VGS = 0V Ã Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance Parameter RthJC
Junction-to-Case
Min Typ Max Units —
—
0.5
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the international Rectifier Website. For footnotes refer to the last page
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IRF7NA2907
1000
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
4.5V
100
1
4.5V
100
20µs PULSE WIDTH TJ = 25 °C
10 0.1
10
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 150 ° C
100
TJ = 25 ° C
V DS =15 25V 20µs PULSE WIDTH 6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
5.5
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
20µs PULSE WIDTH TJ = 150 °C
10 0.1
VDS , Drain-to-Source Voltage (V)
10 4.5
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
TOP
ID = 75A
2.0
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = 10V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF7NA2907
20000
VGS , Gate-to-Source Voltage (V)
16000
Ciss 12000
8000
Coss 4000
0
Crss
1
10
12
8
4
FOR TEST CIRCUIT SEE FIGURE 13 0
100
ID, Drain-to-Source Current (A)
1000
100
10
TJ = 25 ° C 1
V GS = 0 V 1.0
Fig 7. Typical Source-Drain Diode Forward Voltage
400
500
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
TJ = 150 ° C
VSD ,Source-to-Drain Voltage (V)
4
300
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
0.5
200
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
0.1 0.0
VDS = 60V
16
0
100
ID = 45A
VDS , Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
20
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
1.5
100µs 1ms
10
1
Tc = 25°C Tj = 150°C Single Pulse 0
1
10ms
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7NA2907
200
LIMITED BY PACKAGE
VGS
D.U.T.
RG
150
I D , Drain Current (A)
RD
V DS
+
-V DD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
100
Fig 10a. Switching Time Test Circuit
50
VDS 90% 0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.20 0.10 0.05 0.02 0.01
0.01
PDM
SINGLE PULSE (THERMAL RESPONSE)
t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.001 0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7NA2907
15V
DRIVER
L
VDS
D.U.T
RG
+ V - DD
IAS VGS 20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
1000
ID 33.5A 47.4A BOTTOM 75A TOP
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C) V(BR)DSS tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T.
QG
10 V
50KΩ 12V
QGS
.2µF .3µF
QGD
D.U.T.
+ V - DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF7NA2907
Footnotes: Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 0.17mH Peak IAS = 75A, VGS = 10V, RG= 25Ω
ISD ≤ 45A, di/dt ≤ 260A/µs, VDD ≤ 75V, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 101 N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2015
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