Transcript
PD - 94603
HEXFET® POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA)
IRF7YSZ44VCM 60V, N-CHANNEL
Product Summary Part Number IRF7YSZ44VCM
RDS(on) ID 0.0195Ω 20A*
BVDSS
60V
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
Low Ohmic TO-257AA
Features: n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight
Units 20* 20* 80 50 0.4 ±20 71 20 5.0 1.6 -55 to 150
A W W/°C
V mJ A mJ V/ns o
C
300 (0.063in./1.6mm from case for 10s) 4.3 (Typical)
g
* Current is limited by package For footnotes refer to the last page
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IRF7YSZ44VCM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter
Min
Drain-to-Source Breakdown Voltage
—
—
V
—
0.064
—
V/°C
—
—
0.0195
Ω
2.0 17 — —
— — — —
4.0 — 25 250
V S( )
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
— — — — — — — — — 6.8
100 -100 50 18 25 20 120 60 90 —
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
1730 375 60
— — —
∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
l Ciss C oss C rss
Typ Max Units
60
Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 20A ➃ VDS = VGS, ID = 250µA VDS =15V, IDS = 20A ➃ VDS = 60V ,VGS=0V VDS = 48V, VGS = 0V, TJ=125°C VGS = 20V VGS = -20V VGS =10V, ID = 20A VDS = 48V
Ω
BVDSS
µA
nA nC
VDD = 30V, ID = 20A, VGS = 10V, RG = 9.1Ω
ns
nH
pF
Measured from drain lead (6mm/ 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min Typ Max Units — — — — —
— — — — —
20* 80 1.2 105 220
Test Conditions
A V ns nC
Tj = 25°C, IS = 20A, VGS = 0V ➃ Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs VDD ≤ 25V ➃
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance Parameter RthJC
Junction-to-Case
Min Typ Max —
—
2.5
Units
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRF7YSZ44VCM
1000
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
100
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10 4.5V 20µs PULSE WIDTH Tj = 25°C 1
10
20µs PULSE WIDTH Tj = 150°C 1
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
TJ = 150°C
TJ = 25°C 10
VDS = 25V 20µs 15 PULSE WIDTH 1.0 4.5
5
5.5
6
6.5
7
7.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100.0
Fig 2. Typical Output Characteristics
100
4
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID , Drain-to-Source Current ( Α)
4.5V
8
I D = 20A
2.0
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = 10V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF7YSZ44VCM
3000
ID = 20A
2000
VGS, Gate-to-Source Voltage (V)
Crss = Cgd Coss = Cds + Cgd
2500
C, Capacitance (pF)
12
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED
Ciss
1500
1000
Coss
500
VDS = 48V VDS = 30V VDS= 12V
8
4
Crss 0
0 1
10
100
0
5
VDS, Drain-to-Source Voltage (V)
15
20
25
30
35
40
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
ID , Drain-to-Source Current (A)
100
ISD , Reverse Drain Current ( Α)
10
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
T J = 150°C T J = 25°C 10
VGS = 0V 0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
1ms 1
10ms
Tc = 25°C Tj = 150°C Single Pulse 0.1
1.0 0.4
100µs
10
1.6
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7YSZ44VCM
40
LIMITED BY PACKAGE
I D , Drain Current (A)
RD
V DS VGS
D.U.T.
RG
30
+
-V DD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS 90% 0 25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50 1 0.20
0.10 0.05 0.1
0.02 0.01
P DM
SINGLE PULSE (THERMAL RESPONSE)
t1
t2
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.01 0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF7YSZ44VCM
1 5V
D R IV E R
L
VDS
D .U .T.
RG
+ V - DD
IA S 2V 0V GS tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS
EAS , Single Pulse Avalanche Energy (mJ)
150
ID 9.0A 12.6A BOTTOM 20A TOP
120
90
60
30
0 25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS Current Regulator Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ 12V
.2µF .3µF
QG
10V
D.U.T.
QGS
+ V - DS
QGD VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF7YSZ44VCM
Footnotes: Repetitive Rating; Pulse width limited by
ISD ≤ 20A, di/dt ≤ 310A/µs,
maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 0.35mH Peak I AS = 20A, VGS =10V, RG= 25Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 60V, TJ ≤ 150°C
Case Outline and Dimensions — Low-ohmic TO-257AA 0.13 [.005]
A 3.81 [.150] 3X Ø 3.56 [.140]
10.66 [.420] 10.42 [.410]
5.08 [.200] 4.83 [.190]
16.89 [.665] 16.39 [.645]
13.63 [.537] 13.39 [.527]
10.92 [.430] 10.42 [.410] 1
2
1.14 [.045] 0.89 [.035]
B
3
0.71 [.028] MAX.
C 15.88 [.625] 12.70 [.500]
2.54 [.100] 2X
3X Ø
0.88 [.035] 0.64 [.025]
Ø 0.50 [.020]
C A
3.05 [.120] B
NOT ES : 1. 2. 3. 4.
DIMENS IONING & TOLERANCING PE R ANS I Y14.5M-1994. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIME TERS [INCHES ]. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA.
P IN AS S IGNME NT S
1 = DRAIN 2 = S OURCE 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03
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