Transcript
IRFHS9301PbF HEXFET® Power MOSFET
VDS
-30
V
VGS max
±20
V
RDS(on) max (@VGS = -10V)
Qg (typical) ID (@TC = 25°C)
TOP VIEW
D 1
37
mΩ
13
nC
D 2
A
G 3
-8.5
d
D
6 D
D
D D
5 D
D S
G
4 S
D
S
S
2mm x 2mm PQFN
Applications l l
Charge and Discharge Switch for Battery Application System/load switch
Features and Benefits Features Low RDSon (≤ 37mΩ)
Benefits Lower Conduction Losses
Low Thermal Resistance to PCB (≤ 13°C/W)
Enable better thermal dissipation
Low Profile (≤ 1.0 mm)
results in
Increased Power Density
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Increased Reliability
Orderable part number
Package Type
IRFHS9301TRPBF IRFHS9301TR2PBF
Environmentally Friendlier
Standard Pack Form
Quantity
PQFN 2mm x 2mm
Tape and Reel
4000
PQFN 2mm x 2mm
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @ TA = 70°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and Storage Temperature Range
f f
Max. -30 ± 20 -6.0 -4.8 -13 -10 -8.5
d d d
c
-52 2.1 1.3
0.02 -55 to + 150
Units V
A
W W/°C °C
Notes through
are on page 2 1
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IRFHS9301PbF
Static @ TJ = 25°C (unless otherwise specified) Min.
Typ.
Max.
Units
BVDSS
Drain-to-Source Breakdown Voltage
Parameter
-30
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.02
–––
V/°C
–––
30
37 65 -2.4 –––
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) ΔVGS(th)
Gate Threshold Voltage Gate Threshold Voltage Coefficient
––– -1.3 –––
52 -1.8 -4.8
IDSS
Drain-to-Source Leakage Current
–––
–––
-1.0
–––
–––
-150
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
IGSS
mΩ
Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA
e = -6.2A e
VGS = -10V, ID = -7.8A VGS = -4.5V, ID
V VDS = VGS, ID = -25μA mV/°C VDS = -24V, VGS = 0V μA VDS = -24V, VGS = 0V, TJ = 125°C nA
VGS = -20V VGS = 20V
gfs Qg
Forward Transconductance
9.3
–––
–––
S
VDS = -10V, ID = -7.8A
Total Gate Charge
–––
6.9
–––
nC
VDS = -15V,VGS = -4.5V,ID = - 7.8A
Qg
Total Gate Charge
–––
13
–––
Qgs
Gate-to-Source Charge
–––
2.1
–––
nC
VDS = -15V
Qgd
Gate-to-Drain Charge
–––
3.9
–––
RG
Gate Resistance
–––
17
–––
td(on)
Turn-On Delay Time
–––
12
–––
VDD = -15V, VGS = -4.5V ID = -7.8A
tr
Rise Time
–––
80
–––
td(off)
Turn-Off Delay Time
–––
13
–––
tf
Fall Time
–––
25
–––
Ciss
Input Capacitance
–––
580
–––
Coss
Output Capacitance
–––
125
–––
Crss
Reverse Transfer Capacitance
–––
79
–––
Min.
Typ.
Max.
VGS = -10V ID = -7.8A Ω
ns
e
RG = 2.0Ω See Figs. 19a & 19b VGS = 0V
pF
VDS = -25V ƒ = 1.0KHz
Diode Characteristics Parameter IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
c
(Body Diode)
d
–––
–––
-8.5
–––
–––
-52
–––
-1.2
Conditions
Units
MOSFET symbol A
D
showing the integral reverse
G
p-n junction diode.
S
e
VSD
Diode Forward Voltage
–––
trr
Reverse Recovery Time
–––
30
45
ns
TJ = 25°C, IF = -7.8A, VDD = -15V
Qrr
Reverse Recovery Charge
–––
110
170
nC
di/dt = 280/μs
V
TJ = 25°C, IS = -7.8A, VGS = 0V
Thermal Resistance Typ.
Max.
RθJC (Bottom)
Junction-to-Case
–––
13
RθJC (Top)
–––
90
RθJA
Junction-to-Ambient f
RθJA
Junction-to-Ambient (t<10s)
Parameter
g Junction-to-Case g
f
60 –––
e
Units °C/W
42
Notes: Repetitive rating; pulse width limited by max. junction temperature. Current limited by package. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C. .
2
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IRFHS9301PbF
1000
1000
100 BOTTOM
10
-2.8V
1
100 BOTTOM
10 -2.8V 1
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH Tj = 25°C
0.1 0.1
1
Tj = 150°C
0.1 10
0.1
100
1
100
1.6 RDS(on) , Drain-to-Source On Resistance (Normalized)
-ID, Drain-to-Source Current(A)
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
10 TJ = 150°C
1 TJ = 25°C VDS = -15V ≤60μs PULSE WIDTH 0.1
ID = -7.8A
VGS = -10V
1.4
1.2
1.0
0.8
0.6 1
2
3
4
5
6
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics 10000
-V GS, Gate-to-Source Voltage (V)
ID= -7.8A
Coss = Cds + Cgd
Ciss Coss
100
Fig 4. Normalized On-Resistance vs. Temperature 14
VGS = 0V, f = 1 KHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
1000
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Crss
10
VDS= -24V VDS= -15V
12
VDS= -6V 10 8 6 4 2 0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3
VGS -10V -8.0V -5.0V -4.5V -3.5V -3.3V -3.0V -2.8V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS -10V -8.0V -5.0V -4.5V -3.5V -3.3V -3.0V -2.8V
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0
2
4
6
8
10
12
14
16
18
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback
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IRFHS9301PbF 1000
-ID, Drain-to-Source Current (A)
-ISD, Reverse Drain Current (A)
100
TJ = 150°C 10
TJ = 25°C VGS = 0V 0.6
0.8
100
1msec
10
100μsec
1
0.1
Tc = 25°C Tj = 150°C Single Pulse
DC
10msec
0.01
1.0 0.4
OPERATION IN THIS AREA LIMITED BY RDS(on)
0.1
1.0
1
10
100
VDS, Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
14
2.0 -VGS(th), Gate threshold Voltage (V)
LIMITED BY PACKAGE
ID, Drain Current (A)
12 10 8 6 4 2
ID = -25uA 1.5
1.0
0 25
50
75
100
125
150
0.5 -75 -50 -25
TC, Case Temperature (°C)
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
Thermal Response ( ZthJC )
100
10
D = 0.50 0.20
1
0.1
0.01
0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4
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100
( Ω) RDS(on), Drain-to -Source On Resistance m
RDS(on), Drain-to -Source On Resistance (mΩ)
IRFHS9301PbF
ID = -7.8A 80
60
TJ = 125°C
40 TJ = 25°C 20 0
5
10
15
100 Vgs = -4.5V 80
60
40
Vgs = -10V
20
20
0
5
10
15
20
25
30
-ID, Drain Current (A)
-VGS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage 600 500
Power (W)
400 300 200 100 0 1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
Fig 14. Typical Power vs. Time
D.U.T *
Driver Gate Drive
+
+
-
*
D.U.T. ISD Waveform Reverse Recovery Current
+
RG
• • • •
di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
+ -
Re-Applied Voltage
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Body Diode
Reverse Polarity of D.U.T for P-Channel
VDD
Forward Drop
Inductor Current Inductor Curent Ripple ≤ 5%
*
P.W. Period VGS=10V
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
D=
Period
P.W.
ISD
* VGS = 5V for Logic Level Devices
Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5
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IRFHS9301PbF
Id Vds Vgs
L VCC
DUT
0
20K 1K
Vgs(th)
SS
Qgodr
Fig 16a. Gate Charge Test Circuit
VDS
RG
RD tr
t d(off)
tf
VGS
D.U.T.
-
+
10% V DD
-VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 17a. Switching Time Test Circuit
6
Qgs2 Qgs1
Fig 16b. Gate Charge Waveform
td(on)
VGS
Qgd
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90% VDS
Fig 17b. Switching Time Waveforms
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IRFHS9301PbF
PQFN Package Details
PQFN Part Marking
9301
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7
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IRFHS9301PbF PQFN Tape and Reel
CORE
TAPE
Remark:
Width Table 2: COVER TAPE (WIDTH) 5.4 mm 9.5 mm
- Dimension above are typical dimensions. - Cover tape thickness is 0.048mm +/- 0.005mm. - Surface resistivity 10E5 < Rs <10E9.
TOLERANCE +/- 0.1 mm +/- 0.1 mm
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFHS9301PbF
†
Qualification information
††
Industrial
Qualification level
(per JEDE C JES D47F
Moisture Sensitivity Level
PQFN 2mm x 2mm
RoHS compliant
†††
guidelines ) MS L1 †††
(per IPC/JE DE C J-S TD-020D
)
Yes
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Revision History Date 5/12/2014 5/21/2014
Comment • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) • Updated data sheet based on corporate template. • Updated qual level from "Consumer" to "Industrial" on page 1 & 9.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9
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