Transcript
CLA40E1200HR
High Efficiency Thyristor
VRRM
=
1200 V
I TAV
=
40 A
VT
=
1,19 V
Single Thyristor
Part number
CLA40E1200HR
Backside: isolated
2
1 3
Features / Advantages:
Applications:
Package: ISO247
● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling
Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CLA40E1200HR Ratings
Thyristor Conditions
Symbol VRSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
VRRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1200
I R/D
reverse current, drain current
VT
forward voltage drop
TVJ = 25°C
50
µA
4
mA
TVJ = 25°C
1,25
V
1,49
V
1,19
V
IT =
40 A
IT =
80 A
IT =
40 A
IT =
80 A
I T(RMS)
RMS forward current
180° sine
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
TVJ = 125 °C
for power loss calculation only
thermal resistance case to heatsink total power dissipation
I TSM
max. forward surge current
value for fusing
V
TVJ = 125°C
TC = 95 °C
RthCH
max. Unit 1300 V
VR/D = 1200 V
average forward current
Ptot
typ.
VR/D = 1200 V
I TAV
I²t
min.
1,50
V
T VJ = 150 °C
40
A
63
A
TVJ = 150 °C
0,86
V
7,9
mΩ
0,8 K/W K/W
0,25 TC = 25°C
155
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
650
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
700
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
555
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
595
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
2,12 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
2,04 kA²s
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
1,54 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
CJ
junction capacitance
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 150 °C
1,48 kA²s 25
t P = 300 µs
pF 10
W
5
W
0,5
W
PGAV
average gate power dissipation
(di/dt) cr
critical rate of rise of current
TVJ = 150 °C; f = 50 Hz repetitive, IT = 120 A t P = 200 µs; di G /dt = 0,3 A/µs;
(dv/dt)cr
critical rate of rise of voltage
V = ⅔ VDRM
VGT
gate trigger voltage
VD = 6 V
TVJ = 25 °C
1,5
TVJ = -40 °C
1,6
V
I GT
gate trigger current
VD = 6 V
TVJ = 25 °C
50
mA
TVJ = -40 °C
80
mA
VGD
gate non-trigger voltage
TVJ = 150°C
0,2
V
I GD
gate non-trigger current
3
mA
IL
latching current
TVJ = 25 °C
125
mA
IG =
0,3 A; V = ⅔ VDRM
non-repet., I T =
150 A/µs
40 A
500 A/µs 1000 V/µs
TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
VD = ⅔ VDRM tp =
10 µs
IG =
0,3 A; di G /dt =
V
0,3 A/µs
IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
100
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG =
0,3 A; di G /dt =
0,3 A/µs
VR = 100 V; I T = 40 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
200
µs
20 V/µs t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CLA40E1200HR Package
Ratings
ISO247
Symbol I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max. 70
Unit A
-55
150
°C
-55
125
°C
150
°C
6
Weight MD
mounting torque
FC
mounting force with clip
d Spp/App
terminal to terminal
creepage distance on surface | striking distance through air
terminal to backside
d Spb/Apb VISOL
t = 1 second
isolation voltage
t = 1 minute
Product Marking
Logo Part Number DateCode Assembly Code
50/60 Hz, RMS; IISOL ≤ 1 mA
g
0,8
1,2
Nm
20
120
N
2,7
mm
4,1
mm
3600
V
3000
V
Part description C L A 40 E 1200 HR
abcdef
= = = = = = =
Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] ISO247 (3)
YYWWZ 000000
Assembly Line
Ordering Standard
Ordering Number CLA40E1200HR
Similar Part CMA40E1600HR
Equivalent Circuits for Simulation I
V0
R0
Marking on Product CLA40E1200HR
Package ISO247 (3)
* on die level
Delivery Mode Tube
Code No. 515428
Voltage class 1600
T VJ = 150 °C
Thyristor
V 0 max
threshold voltage
0,86
V
R0 max
slope resistance *
5,4
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Quantity 30
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CLA40E1200HR Outlines ISO247 A
E
A2 A3
2x E3
ØP
2x D3
S
Q
Millimeter min max A 4.70 5.30 A1 2.21 2.59 A2 1.50 2.49 A3 typ. 0.05 b 0.99 1.40 b2 1.65 2.39 b4 2.59 3.43 c 0.38 0.89 D 20.79 21.45 D1 typ. 8.90 D2 typ. 2.90 D3 typ. 1.00 E 15.49 16.24 E1 typ. 13.45 E2 4.31 5.48 E3 typ. 4.00 e 5.46 BSC L 19.80 20.30 L1 4.49 Ø P 3.55 3.65 Q 5.38 6.19 S 6.14 BSC
Dim.
D D1
2x E2
4 1
2
3
D2
L1 E1 L
2x b2 3x b
C
b4
A1
2x e
2
Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 typ. 0.002 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.819 0.844 typ. 0.350 typ. 0.114 typ. 0.039 0.610 0.639 typ. 0.530 0.170 0.216 typ. 0.157 0.215 BSC 0.780 0.799 0.177 0.140 0.144 0.212 0.244 0.242 BSC
1 3
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CLA40E1200HR Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
