Transcript
PH520 High Linearity InGaP HBT Amplifier Features
Applications
1500MHz - 2500MHz
Mobile Infrastructure
13.4 dB Gain at 2140MHz
PCS, WCDMA, WiBro
+30 dBm P1dB
W-LAN / ISM
+44 dBm Output IP3
RFID / Fixed Wireless
Functional Diagram 4 3 2 1
Single Voltage Supply
Function
Pin No.
Lead-free Lead free / Green / RoHSRoHS
RF IN
1
compliant SOT-89 Package
RF OUT / Bias
3
Ground
2,4
Description The PH520 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high quality SOT-89 package. The device features excellent Input and output return loss, highly linear performance. The y matched to obtain optimum p p y The p g power and linearity. product is targeted for use as driver device can be easily amplifier for wireless infrastructure applications. The PH520 operates from a single +5.5 voltage supply and have an internal active bias. All devices are 100% RF and DC tested
Specifications Symbol
Parameters
Units
S21
Gain
dB
S11
S22
P1dB
OIP3
NF
Input Return Loss
Output Return Loss
Freq.
Min.
Typ.
1950 MHz
14.0
2140 MHz
13.4
1950 MHz
-20
2140 MHz
-15
1950 MHz
-11
2140 MHz
-12
1950 MHz
30.0
2140 MHz
30.0
1950 MHz
45
2140 MHz
44
1950 MHz
3.4
2140 MHz
3.5
Max.
dB
dB
Output Power @1dB compression
dBm
Output Third Order intercept
dBm
Noise Figure
dB
V/I
Device voltage / current
V/mA
5.5/230
Rth
Thermal Resistance
°C/W
50
Test Conditions : T=25°C, Supply Voltage=+5.5V, 50ohm System, OIP3 measured with two tones at an output power of +11dBm/tone separated by 1MHz.
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Mar 2009
PH520 High Linearity InGaP HBT Amplifier 1950 MHz Application Circuit Vcc
Vcc = +5.5V C7 C8 C9
RF_IN
C5 20pF
C4 1uF
C4 C5 C6
C6 0.5pF
RF_OUT
L1 22nH 22 H
L1 C2
C3
C1 11
9
7
5
3
L1
R1
3
5
7
9
RF IN
11
C3 1.2pF
C1
C2
RF OUT
C11
C10
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20pF
C10 1.8pF
20pF
C11 2.5pF
Test Board Information : FR4 PCB (Dielectric Constant = 4.6, thick = 0.8mm(32mil)) RF Microstrip Line Width = 1.2mm(47mil), Tuning Via Diameter (‘R1’,’R2’,’R3’, ‘L1’,’L2’,’ L3’,etc.) and Distance = 0.5mm(20mil) All Passive Component Size is 1608(0603) and L1 is Ceramic inductor
18
1950 MHz
S21 : Gain
14.2 dB
S11 : Input Return Loss
-23 dB
Gain vs. Frequency
16 Gain(dB)
Frequency
S22 : Output Return Loss
-12 dB
Output P1dB
+30.2 dBm
Output IP3 @11dBm
+46 dBm
N i Figure Noise Fi
3 4 dB 3.4
14 12 o
10 8 1850
+25 C o -40 C o +85 C 1900
1950
2000
Supply Voltage
5.5 V
Current
230 mA
2050
Frequency(MHz)
Input Return Loss
0
Output Return Loss
0
34
P1dB vs. Frequency
-20
-10
-30
+25 C o -40 C o +85 C
-15
32 P1dB(dBm)
-5 S22(dB)
S11(dB)
o
-10
30 28 o
+25 C o -40 C o +85 C
o
-40 -50 1850
+25 C o -40 C o +85 C 1900
26
-20
1950
2000
-25 1850
2050
1900
2000
24 1850
2050
1900
OIP3 vs. Temperature
Output IP3 vs. Frequency o
+11dBm/tone, +25 C
Freq=1950MHz, +11dBm/tone
50
1950
2000
2050
Frequency(MHz)
Frequency(MHz) y( )
Frequency(MHz) q y( )
55
1950
6
Noise Figure vs. Frequency
o
45
40
48
5
46
4
NF(dB)
OIP3(dBm)
OIP3(dBm)
50
+25 C o -40 C o +85 C
44
3
42
2
40 -40
1 1850
o
+25 C 35 1850
1900
1950 Frequency(MHz)
2000
2050
-20
0
20
40 o
Temperature( C)
60
80
1900
1950
2000
2050
Frequency(MHz)
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Mar 2009
PH520 High Linearity InGaP HBT Amplifier 2140 MHz Application Circuit Vcc
Vcc = +5.5V C7 C8 C9
C4 C5 C6
RF_IN
C5 20pF
C4 1uF
C6 0.5pF
RF_OUT
L1 22nH 22 H
L1 C2
C3
C1 11
9
7
5
3
L1
R1
C10
3
5
7
9
RF IN
11
C3 1.0pF
C1
C2
RF OUT
C11
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20pF
C10 1.8pF
20pF
C11 2.0pF
Test Board Information : FR4 PCB (Dielectric Constant = 4.6, thick = 0.8mm(32mil)) RF Microstrip Line Width = 1.2mm(47mil), Tuning Via Diameter (‘R1’,’R2’,’R3’, ‘L1’,’L2’,’ L3’,etc.) and Distance = 0.5mm(20mil) All Passive Component Size is 1608(0603) and L1 is Ceramic inductor
18
2140 MHz
S21 : Gain
13.6 dB
S11 : Input Return Loss
-18 dB
Gain vs. Frequency
16 Gain(dB)
Frequency
S22 : Output Return Loss
-14 dB
Output P1dB
+30.5 dBm
Output IP3 @11dBm
+44 dBm
N i Figure Noise Fi
3 5 dB 3.5
14 12 o
10 8 2050
+25 C o -40 C o +85 C 2100
2150
2200
Supply Voltage
5.5 V
Current
230 mA
2250
Frequency(MHz)
0
Input Return Loss
Output Return Loss
0
34
P1dB vs. Frequency
-10
-10
-15
+25 C o -40 C o +85 C
-15
32 P1dB(dBm)
-5 S22(dB)
S11(dB)
o
-5
30 28 o
o
+25 C o -40 C o +85 C
-20 -25 2050
2100
2150
2200
-25 2050
2250
2100
Frequency(MHz) q y( )
+11dBm/tone, +25 C
24 2050
2250
2100
6
46
5
44
4
NF(dB)
OIP3(dBm)
40
2150
2200
2250
Frequency(MHz)
Freq=2140MHz, +11dBm/tone
48
45 OIP3(dBm)
2200
OIP3 vs. Temperature
o
42
Noise Figure vs. Frequency
3
o
+25 C o -40 C o +85 C
35
30 2050
2150 Frequency(MHz) q y( )
Output IP3 vs. Frequency 50
+25 C o -40 C o +85 C
26
-20
2100
2150 Frequency(MHz)
2200
2250
40
2
38 -40
1 2050
o
+25 C -20
0
20
40 o
Temperature( C)
60
80
2100
2150
2200
2250
Frequency(MHz)
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Mar 2009
PH520 High Linearity InGaP HBT Amplifier 4FA W-CDMA ACLR vs. Channel Power
4FA W-CDMA ACLR vs. Channel Power
3GPP W-CDMA 4FA, Test Model5 + w/8HSPDSCH
-40
o
o
freq=1.95GHz,+25 C 5MHz Offset 10MHz Offset
-45 ACLR(dBc)
ACLR(dBc)
-45
3GPP W-CDMA 4FA, Test Model5 + w/8HSPDSCH
-40
-50
freq=2.14GHz,+25 C 5MHz Offset 10MHz Offset
-50
-55
-55
-60
-60 12
14
16
12
18
4FA W-CDMA ACLR @1950MHz 0
Center 1950MHz
#RBW 30kHz
#VBW 1kHz
-10
0
18
Center 2140MHz
#RBW 30kHz
#VBW 1kHz
Span 59.68MHZ
5MHz Offset o +25 C
Vcc=5.5V
-10 10
-20 -30
16
4FA W-CDMA ACLR @2140MHz
Span 59.68MHZ
5MHz Offset o +25 C
Vcc=5.5V
14
Output Channel Power(dBm)
Output Channel Power(dBm)
-20 -30
18.1dBm @40dBc
19.5dBm @40dBc
18.2dBm @45dBc
17.1dBm @45dBc
-40
-40
-50
-50
-60 -70 1920
-60
16.2dBm @50dBc 15 2dBm @55dBc 15.2dBm
1930
1940
1950
1960
1970
-70 2110
1980
16.5dBm @50dBc 14 0dBm @55dBc 14.0dBm
2120
2130
2140
2150
2160
2170
Frequency(MHz)
Frequency(MHz)
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Mar 2009
PH520 High Linearity InGaP HBT Amplifier Absolute Maximum Ratings Parameter
Rating
Unit
Device Voltage
+6
V
Device Current
350
mA
RF Power Input
18
dBm
Storage Temperature
-55 to +125
°C
A bi t Operating Ambient O ti Temperature T t
-40 40 tto +85 85
°C
Junction Temperature
180
°C
Operation of this device above any of these parameters may cause permanent damage.
Lead-free /RoHS Compliant / Green SOT-89 Package Outline
ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 1C(Passes at 1000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020
Mounting Instructions
Evaluation Board Layout (4x4)
1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer l layers near the h part to ensure optimal i l thermal h l performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink.
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Mar 2009
