Transcript
HMC463LP5
v00.0404 MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
AMPLIFIERS - SMT
8
Typical Applications
Features
The HMC463LP5 is ideal for:
Gain: 13 dB
• Telecom Infrastructure
Noise Figure: 2.8 dB @ 10 GHz
• Microwave Radio & VSAT
P1dB Output Power: +18 dBm @ 10 GHz
• Military EW, ECM & C I
Supply Voltage: +5.0V @ 60 mA
• Test Instrumentation
50 Ohm Matched Input/Output
• Fiber Optics
25 mm2 Leadless Package
Functional Diagram
General Description
3
The HMC463LP5 is a GaAs MMIC PHEMT Low Noise AGC Distributed Amplifier packaged in a leadless 5 x 5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 13 dB of gain, 3.0 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 8 dB typical. Gain flatness is excellent at ±0.5 dB from 6 - 18 GHz making the HMC463LP5 ideal for EW, ECM RADAR and test equipment applications. The HMC463LP5 LNA I/Os are internally matched to 50 Ohms and are internally DC blocked. Vgg2: Optional Gate Bias for AGC
Electrical Specifications, TA = +25° C, Vdd= 5V, Idd= 60 mA* Parameter
Min.
Frequency Range Gain
Typ.
Max.
Min.
2.0 - 6.0 10
Typ.
Max.
Min.
6.0 - 18.0
13
9
12
8
Max.
11
dB
±0.5
dB
±0.5
Gain Variation Over Temperature
0.010
0.015
0.010
0.015
0.010
0.015
Noise Figure
3.0
4.0
3.0
5.0
5.5
6.5
Input Return Loss
15
Output Power for 1 dB Compression (P1dB)
13
13 16
19
12
10 11
16
10
dB/ °C dB dB
10
dB
12
dBm
Saturated Output Power (Psat)
21
19
19
dBm
Output Third Order Intercept (IP3)
30
24
22
dBm
Supply Current (Idd) (Vdd= 5V, Vgg1= -0.9V Typ.)
60
60
60
mA
* Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical.
8 - 262
Units GHz
Gain Flatness
Output Return Loss
±0.5
Typ. 18.0 - 20.0
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
HMC463LP5
v00.0404 MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz MMIC PUMPED MIXER GainGaAs & Return LossSUB-HARMONICALLY Gain vs. Temperature 20
20
15
18
0 -5 -10
12 10 8
-15
6
-20
4
-25
2
+25C +85C -40C
0 0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
Input Return Loss vs. Temperature
10
12
14
16
18
20
22
Output Return Loss vs. Temperature 0
0 +25C +85C -40C
-5
OUTPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
8
FREQUENCY (GHz)
-10 -15 -20 -25 -30
AMPLIFIERS - SMT
14
S21 S11 S22
-30
+25C +85C -40C
-5
-10
-15
-20 0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
FREQUENCY (GHz)
10
-5
9
-10 NOISE FIGURE (dB)
+25C +85C -40C
-25
12
14
16
18
20
22
18
20
22
+25C +85C -40C
8
-20
10
Noise Figure vs. Temperature
0
-15
8
FREQUENCY (GHz)
Reverse Isolation vs. Temperature REVERSE ISOLATION (dB)
8
16
5
GAIN (dB)
RESPONSE (dB)
10
17 - 25 GHz
-30 -35 -40 -45
7 6 5 4 3 2
-50
1
-55 -60
0 0
2
4
6
8
10
12
14
FREQUENCY (GHz)
16
18
20
22
0
2
4
6
8
10
12
14
16
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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HMC463LP5
v00.0404 MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz GaAs MMIC SUB-HARMONICALLY Psat PUMPED MIXER P1dB vs. Temperature vs. Temperature 26
26
24
24
22
22
20
20 Psat (dBm)
P1dB (dBm)
18 16 14 12
16 14 +25C +85C -40C
12 10
10
8
8
6
6 0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
FREQUENCY (GHz)
32
26 24 22 +25C +85C -40C
16 14
14
16
18
20
22
24
4.5
22
4
20
3.5
18
3
16
2.5
14
2
12
1.5
10 8
1
Gain P1dB Psat
Noise Figure
0.5 0
6 0
2
4
6
8
10
12
14
16
18
20
22
4.5
5
FREQUENCY (GHz)
Idd (mA)
Noise Figure & Supply Current vs. Control Voltage @ 10 GHz
Gain P1dB
75
5.5
70
5
65
4.5
60
4
55
3.5
50
3
45
2.5
40
2
35
1.5 1
30
OIP3
25
Noise Figure
Idd
0.5 0
20 0
Vgg2 (Vdc)
0.2 0.4 0.6 0.8
1
-1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
Vgg2 (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
1
NOISE FIGURE (dB)
32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2
5.5
Vdd (Vdc)
Gain, P1dB & Output IP3 vs. Control Voltage @ 10 GHz GAIN (dB), P1dB (dBm), OIP3 (dBm)
12
Noise Figure (dB)
OIP3 (dBm)
28
18
10
Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1
Output IP3 vs. Temperature
20
8
FREQUENCY (GHz)
30
8 - 264
17 - 25 GHz
18
+25C +85C -40C
GAIN (dB), P1dB (dBm), Psat (dBm)
AMPLIFIERS - SMT
8
HMC463LP5
v00.0404 MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
GAIN (dB)
18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12
Vgg-1.3 V Vgg=-1.2 V Vgg=-1.1 V Vgg=-1.0V Vgg=-0.9 V
0
2
4
6
8
10
Vgg=-0.8 V Vgg=-0.6 V Vgg=-0.4 V Vgg=-0.2 V Vgg=0 V
12
14
16
18
20
22
Drain Bias Voltage (Vdd)
+9.0 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
Gate Bias Voltage (Vgg2)(AGC)
(Vdd -9.0) Vdc to +2.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+23 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C) (derate 50 mW/°C above 85 °C)
3.25 W
Thermal Resistance (channel to ground paddle)
20 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
FREQUENCY (GHz)
Typical Supply Current vs. Vdd
Outline Drawing
Vdd (V)
Idd (mA)
+4.5
58
+5.0
60
+5.5
62
8
AMPLIFIERS - SMT
Absolute Maximum Ratings
Gain @ Several Control Voltages
NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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HMC463LP5
v00.0404 MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
AMPLIFIERS - SMT
8
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Pad Descriptions Pad Number
Function
Description
1, 3, 4, 6-14, 16-20, 22-29, 31, 32
N/C
No connection. These pins may be connected to RF ground. Performance will not be affected.
2
Vgg2
Optional gate control if AGC is required. Leave Vgg2 open circuited if AGC is not required.
5
RFIN
This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz
15
Vgg1
Gate control for amplifier. Adjust to achieve Idd= 60 mA.
21
RFOUT
This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz
30
Vdd
Power supply voltage for the amplifier. External bypass capacitors are required
Ground Paddle
GND
Grpund paddle must be connected to RF/DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
HMC463LP5
v00.0404 MICROWAVE CORPORATION
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz Evaluation PCB
AMPLIFIERS - SMT
8
List of Materials for Evaluation PCB 108341* Item
Description
J1 - J2
SRI K Connector
J3 - J4
2 mm Molex Header
C1 - C3
100 pF Capacitor, 0402 Pkg.
C4 - C6
1000 pF Capacitor, 0603 Pkg.
C7 - C8
4.7 µF Capacitor, Tantalum
U1
HMC463LP5
PCB**
107339 Evaluation PCB
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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