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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC952LP5GE v01.1012 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER SMT WITH POWER DETECTOR , 9 - 14 GHz Typical Applications Features The HMC952LP5GE is ideal for: +35 dBm Pout @ 27% PAE • Point-to-Point Radios High P1dB Output Power: +34 dBm • Point-to-Multi-Point Radios High Gain: 33 dB • SATCOM High Output IP3: +43 dBm Supply Voltage: Vdd = +6V @ 1400 mA 50 Ohm Matched Input/Output Functional Diagram General Description The HMC952LP5GE is a four-stage GaAs pHEMT MMIC Medium Power Amplifier with a temperature compensated on-chip power detector which operates between 9 and 14 GHz. The amplifier provides 33 dB of gain and +35 dBm of saturated output power at 27% PAE from a +6V supply. With up to +43 dBm IP3 the HMC952LP5GE is ideal for linear applications such as point-to-point and point-to-multi-point radios or SATCOM applications demanding +35 dBm of efficient saturated output power. The RF I/Os are internally matched to 50 Ohms. Electrical Specifications, TA = +25° C, Vdd1, Vdd2, Vdd3, Vdd4 = +6V, Idd = 1400 mA [1] Parameter Min. Frequency Range Gain Typ. Max. Min. 9 - 10 [2] 30 Gain Variation Over Temperature 33 30 Typ. Max. Units 10 - 14 GHz 33 dB 0.05 0.05 dB/ °C Input Return Loss 12 15 dB Output Return Loss 9 12 dB 34 dBm 34.5 35 dBm 42 43 dBm 1400 1400 mA Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) [2] 30.5 [2] Output Third Order Intercept (IP3) [2] [3] Total Supply Current 33 31.5 [1] Adjust Vgg between -2 to 0V to achieve Idd = 1400 mA typical. [2] Board loss subtracted out. [3] Measurement taken at Pout / tone = +20 dBm. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC952LP5GE v01.1012 GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT WITH POWER DETECTOR, 9 - 14 GHz 40 45 30 40 20 35 S21 S11 S22 10 0 30 25 -10 20 -20 -30 15 8 9 10 11 12 13 FREQUENCY (GHz) 14 15 16 9 10 12 13 14 Output Return Loss vs. Temperature 0 0 -5 +25C +85C -40C -5 RETURN LOSS (dB) -10 -15 -20 -25 -10 -15 +25C +85C -40C -20 -25 -30 -35 -30 9 10 11 12 13 14 9 10 FREQUENCY (GHz) 11 12 13 14 13 14 FREQUENCY (GHz) P1dB vs. Temperature P1dB vs Supply Voltage 38 38 5V +25C +85C -40C 36 36 34 P1dB (dBm) P1dB (dBm) 11 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) +25C +85C -40C Amplifiers - Linear & Power - SMT Gain vs. Temperature GAIN (dB) RESPONSE (dB) Gain & Return Loss 32 34 32 30 30 28 28 26 6V 26 9 10 11 12 FREQUENCY (GHz) 13 14 9 10 11 12 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC952LP5GE v01.1012 GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT WITH POWER DETECTOR, 9 - 14 GHz 38 38 36 36 34 34 Psat (dBm) Psat (dBm) Psat vs. Supply Voltage +25C +85C -40C 32 30 28 28 5V 6V 26 9 10 11 12 13 14 9 10 FREQUENCY (GHz) P1dB vs. Supply Current 12 13 14 13 14 Psat vs. Supply Current 38 36 36 34 34 Psat(dBm) 38 32 30 1000 mA 1100 mA 1200mA 1300mA 1400mA 32 30 1000 mA 1100 mA 1200 mA 1300 mA 1400 mA 28 28 26 26 9 10 11 12 13 14 9 10 FREQUENCY (GHz) 12 Output IP3 vs. Supply Current, Pout/tone = +20 dBm 46 46 44 44 42 42 40 40 38 +25C +85C -40C 36 11 FREQUENCY (GHz) IP3 (dBm) IP3 (dBm) 11 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/tone = +20 dBm 38 1000 mA 1100 mA 1200 mA 1300 mA 1400 mA 36 34 34 32 32 30 30 9 10 11 12 FREQUENCY (GHz) 3 32 30 26 P1dB (dBm) Amplifiers - Linear & Power - SMT Psat vs. Temperature 13 14 9 10 11 12 13 14 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC952LP5GE v01.1012 GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT WITH POWER DETECTOR, 9 - 14 GHz 46 80 44 70 42 60 40 50 38 5V 36 6V 40 20 32 10 30 9.5 GHz 10.5 GHz 11.5 GHz 12.5 GHz 13.5 GHz 30 34 0 9 10 11 12 13 14 10 12 14 FREQUENCY (GHz) 16 18 20 22 24 Pout/TONE (dBm) Output IM3 @ Vdd = +6V Noise Figure vs. Temperature 10 80 +25C +85C -40C 70 8 NOISE FIGURE (dB) 60 IM3 (dBc) Amplifiers - Linear & Power - SMT Output IM3 @ Vdd = +5V IM3 (dBc) IP3 (dBm) Output IP3 vs. Supply Voltage, Pout/tone = +20 dBm 50 40 9.5 GHz 10.5 GHz 11.5 GHz 12.5 GHz 13.5 GHz 30 20 6 4 2 10 0 0 10 12 14 16 18 20 22 9 24 10 11 Pout/TONE (dBm) Power Compression @ 9.5 GHz 13 14 Power Compression @ 11.5 GHz 40 3200 2800 35 2800 30 2400 30 2400 25 2000 25 2000 20 1600 20 1600 1200 15 Idd 10 800 Pout Gain PAE 5 400 0 0 -14 -12 -10 -8 -6 -4 -2 0 INPUT POWER (dBm) 2 4 6 Pout (dBm), Gain (dB), PAE (%) 3200 35 1200 15 Idd 10 800 Pout Gain PAE 5 400 0 0 -14 Idd (mA) 40 Idd (mA) Pout (dBm), Gain (dB), PAE (%) 12 FREQUENCY (GHz) -12 -10 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC952LP5GE v01.1012 GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT WITH POWER DETECTOR, 9 - 14 GHz Detector Voltage vs. Frequency & Temperature 3200 35 2800 30 2400 25 2000 20 1600 15 1200 10 1 Vref-Vdet (V) Pout (dBm), Gain (dB), PAE (%) 40 Idd (mA) 10 GHz +25C 10 GHz +85C 10 GHz -40C 12 GHz +25C 12 GHz +85C 12 GHz -40C 0.01 800 10 Pout Gain PAE 5 400 0 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 0.001 -10 -6 -2 2 6 14 18 22 26 30 34 Gain & Power vs. Supply Current @ 11.5 GHz Reverse Isolation vs. Temperature 40 Gain (dB), P1dB (dBm), Psat (dBm) 0 -10 +25C +85C -40C -20 -30 -40 -50 -60 -70 -80 36 32 28 GAIN P1dB Psat 24 20 -90 11 12 13 14 15 16 1000 17 1050 1100 1150 1200 1250 1300 1350 1400 Idd (mA) FREQUENCY (GHz) Power Dissipation 40 12 POWER DISSIPATION (W) Gain (dB), P1dB (dBm), Psat (dBm) 10 OUTPUT POWER (dBm) INPUT POWER (dBm) Gain & Power vs. Supply Voltage @ 11.5 GHz 36 32 GAIN P1dB Psat 28 24 20 5 5.2 5.4 5.6 Vdd (V) 5 0.1 Idd 0 ISOLATION (dB) Amplifiers - Linear & Power - SMT Power Compression @ 13.5 GHz 5.8 6 10 8 6 9 GHz 10 GHz 11 GHz 12 GHz 13 GHz 14 GHz 4 2 0 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC952LP5GE v01.1012 GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT WITH POWER DETECTOR, 9 - 14 GHz Drain Bias Voltage (Vdd) +8 Vdc Gate Bias Voltage (Vgg) RF Input Power (RFIN) Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 137 mW/°C above 85 °C) 8.9 W Thermal Resistance (channel to die bottom) 7.3 °C/W Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C ESD Sensitivity (HBM) Class 0, Passed 150V Typical Supply Current vs. Vdd Vdd (V) Idd (mA) -3 - 0 Vdc +5 1400 +24 dBm +6 1400 Adjust Vgg1 to achieve Idd = 1400 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Amplifiers - Linear & Power - SMT Absolute Maximum Ratings Package Information Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1] HMC952LP5GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL3 H952 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC952LP5GE v01.1012 GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT WITH POWER DETECTOR, 9 - 14 GHz Amplifiers - Linear & Power - SMT Pin Descriptions 7 Pin Number Function Description 1-3, 9, 10, 14, 17-19, 23, 24 N/C These pins are not connected internally, however all data shown herein was measured with these pins connected to RF/DC ground externally. 4 RFIN This pin is DC coupled and matched to 50 Ohms. 5, 15 GND These pins and package bottom must be connected to RF/DC ground. 6-8 Vgg1, Vgg2, Vgg3 Gate control for amplifier External bypass capacitors of 100pF, 10nF and 4.7uF are required. 11, 20-22 Vdd4, Vdd3, Vdd2, Vdd1 Drain bias voltage for amplifier. external bypass capacitors of 100pF, 10nF and 4.7uF are required. 12 Vref DC bias of diode biased through external resistor , used for temperature compensation of Vdet. See application circuit. 13 Vdet DC voltage representing RF output power rectified by diode which is biased through an external resistor. See application circut. 16 RFOUT This pin is DC coupled and matched to 50 Ohms Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC952LP5GE v01.1012 GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT WITH POWER DETECTOR, 9 - 14 GHz Amplifiers - Linear & Power - SMT Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC952LP5GE v01.1012 GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT WITH POWER DETECTOR, 9 - 14 GHz Amplifiers - Linear & Power - SMT Evaluation PCB List of Materials for Evaluation PCB EVAL01-HMC952LP5GE Item Description J1, J2, J5, J6 K Connector SRI J3, J4 DC Pin C2, C3, C9, C12, C14, C16, C17, C19 100 pF Capacitor, 0402 Pkg. C1, C4, C10, C11, C13, C15, C18, C20 10 nF Capacitor, 0402 Pkg. C21, C22, C25 - C30 4.7uF Capacitor, Case A. U1 HMC952LP5GE Power Amplifier PCB 600-00163-00 Evaluation PCB [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon FR4 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC952LP5GE v01.1012 GaAs pHEMPT MMIC 2 Watt POWER AMPLIFIER SMT WITH POWER DETECTOR, 9 - 14 GHz Amplifiers - Linear & Power - SMT Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10