Hmc998lp5e

Transcript

HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Features Amplifiers - Linear & Power - SMT Typical Applications The HMC998LP5E is ideal for: P1dB Output Power: +31 dBm • Test Instumentation Psat Output Power: +33 dBm • Microwave Radio & VSAT High Gain: 11 dB • Military & Space Output IP3: +41 dBm • Telecom Infrastructure Supply Voltage: Vdd = +15V @ 500 mA • Fiber Optics 50 Ohm Matched Input/Output 32 Lead 5x5 mm SMT Package: 25 mm² Functional Diagram General Description The HMC998LP5E is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between 0.1 and 20 GHz. The amplifier provides 11 dB of gain, +41 dBm output IP3, and +31 dBm of output power at 1 dB gain compression while requiring only 500 mA from a +15V supply. The HMC998LP5E exihibits a slightly positive gain from 3 to 17 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC998LP5E amplifier I/Os are internally matched to 50 Ohms and is supplied in a leadless QFN 5x5 mm surface mount package. Electrical Specifications, TA = +25° C, Vdd =+15V, Vgg2 = +9.5V, Idd = 500 mA [1] Parameter Min. Frequency Range Typ. Max. Min. 0.1 - 4 Gain 8 11 Typ. Max. Min. 4 - 16 8 11 9 Typ. max Units 16 - 20 GHz 12 dB Gain Flatness ±0.3 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.006 0.012 0.017 dB/ °C Input Return Loss 17 15 25 dB Output Return Loss 10 15 20 dB Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) 28 31 29 dBm 33 31 dBm 41 41 40 dBm 8 4.5 5 dB 500 500 500 mA 33 [2] Noise Figure Total Supply Current 28 31 26 [1] Adjust Vgg between -2 to 0V to achieve Idd = 500 mA typical. [2] Measurement taken at Pout / tone = +14 dBm. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Gain & Return Loss Gain vs. Temperature 20 14 12 GAIN (dB) RESPONSE (dB) 10 0 -10 10 8 -20 6 -30 4 0 4 8 12 16 20 24 0 4 8 FREQUENCY (GHz) S21 S11 S22 +25 C 16 20 0 -10 -10 -20 -30 +85 C -40 C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -40 -20 -30 -40 0 4 8 12 16 20 0 4 8 FREQUENCY (GHz) +25 C +85 C -40 C +25 C 16 20 +85 C -40 C Noise Figure vs. Temperature 10 20 9 10 NOISE FIGURE (dB) 8 0 -10 -20 -30 7 6 5 4 3 2 -40 -50 0.0001 12 FREQUENCY (GHz) Low Frequency Gain & Return Loss RESPONSE (dB) 12 FREQUENCY (GHz) Amplifiers - Linear & Power - SMT 16 1 0.001 0.01 0.1 1 10 FREQUENCY (GHz) S21 S11 0 0 4 8 12 16 20 FREQUENCY (GHz) S22 +25 C +85 C -40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz 36 34 34 32 32 Psat (dBm) P1dB (dBm) Psat vs. Temperature 36 30 28 26 26 24 0 4 8 12 16 20 0 4 8 FREQUENCY (GHz) +25 C +85 C -40 C +25 C P1dB vs Supply Voltage 16 20 +85 C -40 C Psat vs. Supply Voltage 36 34 34 32 32 Psat (dBm) 36 30 30 28 28 26 26 24 24 0 4 8 12 16 20 0 4 8 FREQUENCY (GHz) 15V 12 16 20 FREQUENCY (GHz) 14V 15V 12V 14V 12V Output IP3 vs. Supply Voltage, Pout/tone = +18 dBm 50 50 45 45 IP3 (dBm) IP3 (dBm) 12 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/tone = +18 dBm 40 35 30 40 35 30 25 25 0 4 8 12 16 20 +25 C +85 C 0 4 8 12 16 20 FREQUENCY (GHz) FREQUENCY (GHz) 3 30 28 24 P1dB (dBm) Amplifiers - Linear & Power - SMT P1dB vs. Temperature -40 C 15V 14V 12V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Output IP3 vs. Idd @ 10 GHz Power Compression @ 4 GHz Pout (dBm), GAIN (dB), PAE (%) IP3 (dBm) 45 40 35 30 25 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 0 22 4 8 OUTPUT POWER (dBm) 450 mA Pout 500 mA Power Compression @ 10 GHz 20 24 Gain PAE 35 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 16 Power Compression @ 18 GHz 35 30 25 20 15 10 5 30 25 20 15 10 5 0 0 1 5 9 13 17 21 25 0 4 INPUT POWER (dBm) Pout 8 12 16 20 24 INPUT POWER (dBm) Gain PAE Pout Gain PAE Second Harmonics vs. Temperature @ Pout = 18 dBm Power Dissipation 11 70 10 60 SECOND HARMONIC (dBc) POWER DISSIPATION (W) 12 INPUT POWER (dBm) Amplifiers - Linear & Power - SMT 35 50 9 8 7 6 5 4 50 40 30 20 10 0 0 4 8 12 16 20 24 0 4 8 INPUT POWER (dBm) 3 GHz 6 GHz 9 GHz 12 16 20 24 FREQUENCY(GHz) 12 GHz 15 GHz 18 GHz +25 C +85 C -40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Second Harmonics vs Pout 70 70 60 60 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) 50 40 30 20 10 0 4 8 12 16 20 24 40 30 20 10 0 4 FREQUENCY(GHz) +12V 8 12 16 20 24 FREQUENCY(GHz) +14V +15V +12 dBm +14 dBm +16 dBm +18 dBm +20 dBm +22 dBm Reverse Isolation vs. Temperature 0 -10 -20 -30 -40 -50 -60 -70 -80 0 4 8 12 16 20 24 FREQUENCY (GHz) +25 C Absolute Maximum Ratings Drain Bias Voltage (Vdd) 5 50 0 0 ISOLATION (dB) Amplifiers - Linear & Power - SMT Second Harmonics vs. Vdd @ Pout = 18 dBm +17 Vdc Gate Bias Voltage (Vgg1) -3 to 0 Vdc Gate Bias Voltage (Vgg2) Vgg2 = (Vdd-6.5V) to (Vdd-4.5V) RF Input Power (RFIN) +27 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 127 mW/°C above 85 °C) 8.26 W Thermal Resistance (channel to gnd paddle) 7.87 °C/W Output Power into VSWR > 7:1 +32 dBm Storage Temperature -65 to 150°C Operating Temperature -40 to 85 °C ESD Sensitivity (HBM) Class 1A +85 C -40 C Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +15 500 +14 500 +13 500 +12 500 Adjust Vgg1 to achieve Idd = 500 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Package Information Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1] HMC998LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL3 H998 XXXX Amplifiers - Linear & Power - SMT Outline Drawing [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Amplifiers - Linear & Power - SMT Pin Descriptions 7 Pin Number Function Description 1, 4, 6, 14, 20, 22, GND These pins and package bottom must be connected to RF/DC ground. 2 Vgg2 Gate control for amplifier. Attach bypass capacitor per application circuit herein. For nominal opperation +9.5V should be applied to Vgg2. 3, 7, 8, 9, 10, 11, 12, 17, 18, 19, 23, 24, 25, 26, 27, 28, 31, 32 N/C These pins are not connected internally, however all data shown herein was measured with these pins connected to RF/DC ground externally. 5 RFIN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 13 Vgg1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Biasing Procedure” application note. 15, 29 ACG4, ACG2 Low frequency termination. Attach bypass capacitor per application circuit. 21 RFOUT & VDD RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 30 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Amplifiers - Linear & Power - SMT Evaluation PCB Evaluation Order Information Item Contents Part Number Evaluation PCB Only HMC998LP5E Evaluation PCB Eval01-HMC998LP5E [1] [1] Reference this number when ordering Evaluation PCB Only List of Materials for Evaluation PCB EVAL01-HMC998LP5E Item Description J1, J2, J5, J6 PCB Mount SMA RF Connector J3, J4 DC Pins. C1 - C4 1000 pF Capacitor, 0402 Pkg. C5 - C8 10 kpF Capacitor, 0402 Pkg. C9 - C11 4.7 uF Capacitor, Tantalum. R1, R2 0 Ohm Resistor, 0402 Pkg. U1 HMC998LP5E PCB [1] 127135 Evaluation PCB. [1] Circuit Board Material: Rogers 4350 or Arlon 25FR The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Amplifiers - Linear & Power - SMT Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Amplifiers - Linear & Power - SMT Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10