Transcript
DISCRETE SEMICONDUCTORS
DATA SHEET handbook, 2 columns
M3D116
1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992
1996 Jun 19
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass package, using a high temperature alloyed construction.
• High maximum operating temperature • Low leakage current
2/3 page k(Datasheet)
• Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack.
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM
VRWM
VR
IF(AV)
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1N5059
−
200
V
1N5060
−
400
V
1N5061
−
600
V
1N5062
−
800
V
1N5059
−
200
V
1N5060
−
400
V
1N5061
−
600
V
1N5062
−
800
V
1N5059
−
200
V
1N5060
−
400
V
1N5061
−
600
V
1N5062
−
800
V
repetitive peak reverse voltage
crest working reverse voltage
continuous reverse voltage
average forward current
Ttp = 45 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4
−
2.0
A
Tamb = 80 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4
−
0.8
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave
−
50
A
ERSM
non-repetitive peak reverse avalanche energy
L = 120 mH; Tj = Tj max prior to surge; inductive load switched off
−
20
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
1996 Jun 19
see Fig.5
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R
PARAMETER
CONDITIONS
MIN.
TYP.
IF = 1 A; Tj = Tj max; see Fig.6
−
−
0.8
V
IF = 1 A; see Fig.6
−
−
1.0
V
1N5059
225
−
−
V
1N5060
450
−
−
V
1N5061
650
−
−
V
forward voltage reverse avalanche breakdown voltage
UNIT
IR = 0.1 mA
900
−
−
V
VR = VRRMmax; see Fig.7
−
−
1
µA
VR = VRRMmax; Tj = 165 °C; see Fig.7
−
−
150
µA
1N5062 IR
MAX.
reverse current
trr
reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10
−
3
−
µs
Cd
diode capacitance
−
50
−
pF
VR = 0 V; f = 1 MHz; see Fig.8
THERMAL CHARACTERISTICS SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
Rth j-a
thermal resistance from junction to ambient
note 1
VALUE 46
K/W
100
K/W
Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”.
1996 Jun 19
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UNIT
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
GRAPHICAL DATA MBG044
3
MBG054
1.6
handbook, halfpage
handbook, halfpage
IF(AV)
IF(AV)
(A)
(A)
1.2 2
0.8
1
0.4
0 0
40
80
120
0
160 200 Ttp (°C)
a = 1.57; VR = VRRMmax; δ = 0.5. Lead length 10 mm.
Fig.2
40
0
80
120
200 160 Tamb (°C)
a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.9.
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
MGC745
4
MBH388
200
handbook, halfpage
handbook, halfpage
P (W) 3 2.5
Tj (°C)
2 1.57 1.42
2
100 a=3
59
60
61
62
1
0
0 0
1
2
IF(AV) (A)
3
0
400
800
VR (V)
1200
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.4
Solid line = VR. Dotted line = VRRM; δ = 0.5.
Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
1996 Jun 19
Fig.5
4
Maximum permissible junction temperature as a function of reverse voltage.
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
MGC735
MGC734
3 10halfpage handbook,
15
handbook, halfpage
IR (µA)
IF (A)
10
2
10 max 10
5 1
10 −1
0 0
1
VF (V)
2
40
80
120
160
200
Tj (oC)
Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C.
Fig.6
0
VR = VRRMmax.
Forward current as a function of forward voltage; maximum values.
Fig.7
Reverse current as a function of junction temperature; maximum values.
MBG031
10 2 handbook, halfpage
50
handbook, halfpage
25 Cd (pF) 7 50
10
2 3
1 1
10
VR (V)
10 2
MGA200
f = 1 MHz; Tj = 25 °C. Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse voltage; typical values.
1996 Jun 19
Fig.9 Device mounted on a printed-circuit board.
5
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
handbook, full pagewidth
1N5059 to 1N5062
IF (A)
DUT +
10 Ω
0.5
25 V
t rr
1Ω 50 Ω
0
t
0.25 0.5 IR (A) 1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 Jun 19
6
MAM057
Philips Semiconductors
Product specification
Controlled avalanche rectifiers PACKAGE OUTLINE
handbook, full pagewidth
k
3.81 max
28 min
Dimensions in mm.
, 4.57 max
1N5059 to 1N5062
a
28 min
0.81 max
MBC880
Fig.11 SOD57.
DEFINITIONS Data sheet status Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Jun 19
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