Transcript
BC857...-BC860... PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847...-BC850... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)
1BC857BL3
is not qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BC857A
3Es
1=B
2=E
3=C
-
-
-
SOT23
BC857B
3Fs
1=B
2=E
3=C
-
-
-
SOT23
BC857BL3*
3F
1=B
2=E
3=C
-
-
-
TSLP-3-1
BC857BW
3Fs
1=B
2=E
3=C
-
-
-
SOT323
BC857C
3Gs
1=B
2=E
3=C
-
-
-
SOT23
BC857CW
3Gs
1=B
2=E
3=C
-
-
-
SOT323
BC858A
3Js
1=B
2=E
3=C
-
-
-
SOT23
BC858B
3Ks
1=B
2=E
3=C
-
-
-
SOT23
BC858BW
3Ks
1=B
2=E
3=C
-
-
-
SOT323
BC858C
3Ls
1=B
2=E
3=C
-
-
-
SOT23
BC858CW
3Ls
1=B
2=E
3=C
-
-
-
SOT323
BC859C
4Cs
1=B
2=E
3=C
-
-
-
SOT23
BC860B
4Fs
1=B
2=E
3=C
-
-
-
SOT23
BC860BW
4Fs
1=B
2=E
3=C
-
-
-
SOT323
BC860CW
4Gs
1=B
2=E
3=C
-
-
-
SOT323
* Not qualified according AEC Q101
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2011-09-19
BC857...-BC860... Maximum Ratings Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BC857..., BC860...
45
BC858..., BC859...
30
Collector-base voltage
Unit
VCBO
BC857..., BC860...
50
BC858..., BC859...
30 5
Emitter-base voltage
VEBO
Collector current
IC
100
Peak collector current, tp ≤ 10 ms
ICM
200
Total power dissipation
Ptot
mW
TS ≤ 71 °C, BC857-BC860
330
TS ≤ 135 °C, BC857BL3
250
TS ≤ 124 °C, BC857W-BC860W
250
Junction temperature
Tj
Storage temperature
Tstg
Thermal Resistance Parameter
Symbol
Junction - soldering point1)
RthJS
mA
150
°C
-65 ... 150 Value
BC857-BC860
≤ 240
BC857BL3
≤ 60
BC857W-BC860W
≤ 105
Unit K/W
1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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2011-09-19
BC857...-BC860... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC857..., BC860...
45
-
-
IC = 10 mA, IB = 0 , BC858..., BC859...
30
-
-
IC = 10 µA, IE = 0 , BC857..., BC860...
50
-
-
IC = 10 µA, IE = 0 , BC858..., BC859...
30
-
-
5
-
-
Collector-base breakdown voltage
Unit
V
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 1 µA, IC = 0
Collector-base cutoff current
µA
ICBO
VCB = 45 V, IE = 0
-
-
0.015
VCB = 30 V, IE = 0 , TA = 150 °C
-
-
5
DC current gain1)
-
hFE
IC = 10 µA, VCE = 5 V, hFE-grp.A
-
140
-
IC = 10 µA, VCE = 5 V, hFE-grp.B
-
250
-
IC = 10 µA, VCE = 5 V, hFE-grp.C
-
480
-
IC = 2 mA, VCE = 5 V, hFE-grp.A
125
180
250
IC = 2 mA, VCE = 5 V, hFE-grp.B
220
290
475
IC = 2 mA, VCE = 5 V, hFE-grp.C
420
520
800
Collector-emitter saturation voltage1)
mV
VCEsat
IC = 10 mA, IB = 0.5 mA
-
75
300
IC = 100 mA, IB = 5 mA
-
250
650
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
-
850
-
IC = 2 mA, VCE = 5 V
600
650
750
IC = 10 mA, VCE = 5 V
-
-
820
Base emitter saturation voltage1)
VBEsat
Base-emitter voltage1)
1Pulse
VBE(ON)
test: t < 300µs; D < 2%
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2011-09-19
BC857...-BC860... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol
Parameter
Values
Unit
min.
typ.
max.
fT
-
250
-
MHz
Ccb
-
1.5
-
pF
Ceb
-
8
-
AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance VCB = 10 V, f = 1 MHz
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
kΩ
h11e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A
-
2.7
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B
-
4.5
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C
-
8.7
-
Open-circuit reverse voltage transf. ratio
10 -4
h12e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A
-
1.5
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B
-
2
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C
-
3
-
Short-circuit forward current transf. ratio
-
h21e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A
-
200
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B
-
330
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C
-
600
-
Open-circuit output admittance
µS
h22e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A
-
18
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B
-
30
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C
-
60
-
F
-
1
4
dB
Vn
-
-
0.11
µV
Noise figure IC = 0.2 mA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ, BC859, BC850 Equivalent noise voltage IC = 200 mA, VCE = 5 V, RS = 2 kΩ, f = 10...50 Hz, BC860
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BC857...-BC860... DC current gain hFE = ƒ(IC) VCE = 1 V
Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 20 EHP00382
10 3
h FE 5
EHP00380
10 2 mA
ΙC
100 C
100 C 25 C -50 C
25 C -50 C
10 2
10 1
5
5
10 1
10
5
5
10 0 10 -2
5
10 -1
5 10
0
5 10
1
mA 10 ΙC
10 -1
2
0
0.1
0.2
0.3
0.4
V 0.5 VCEsat
Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V
Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 20 EHP00379
10 2
0
mA
ΙC
EHP00381
10 4 nA
Ι CB0
10
10 3
100 C 25 C -50C
1
5 max
10 2
5
5 typ
10 1 5
10 0 5
10
0
5
10 -1
10 -1
0
0.2
0.4
0.6
0.8
V 1.2 V BEsat
0
50
100
C
150
TA
5
2011-09-19
BC857...-BC860... Transition frequency fT = ƒ(IC) VCE = 5 V
Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00378
10 3
12 pF
MHz 5
10
CCB(CEB )
fT
10
9 8 7
2
6 5
5
4
CEB
3 2 CCB
1
10 1 10 -1
5 10 0
5
10 1
mA ΙC
0 0
10 2
4
8
12
16
V
Total power dissipation P tot = ƒ(TS)
Total power dissipation P tot = ƒ(TS)
BC856-BC860
BC857BL3
360
300 mW
300
250
270
225
240
200
Ptot
Ptot
mW
210
175
180
150
150
125
120
100
90
75
60
50
30
25
0 0
22
VCB(VEB
15
30
45
60
75
90 105 120
0 0
°C 150 TS
15
30
45
60
75
90 105 120 °C
150
TS
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2011-09-19
BC857...-BC860... Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load
BC857W-BC860W
Ptotmax/PtotDC = ƒ(tp ) BC857/W-BC860/W
300
EHP00377
10 3
mW
Ptot max 5 Ptot DC
250
D=
tp
tp T
T
Ptot
225
10 2
200 175
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
5
150 125 100
10 1
75
5
50 25 0 0
15
30
45
60
75
90 105 120 °C
10 0 10 -6
150
10 -5
10 -4
10 -3
10 -2
TS
tp
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BC857BL3
Ptotmax/PtotDC = ƒ(tp ) BC857BL3 10 3
Ptotmax/ PtotDC
R thJS
10 2
10
1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 0
10 -1 -7 10
10 0
s
10
-6
10
-5
10
-4
10
-3
10
-2
10
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2
10 1
s
10
10 0 -7 10
0
tp
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
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2011-09-19
Package SOT23
BC857...-BC860...
0.4 +0.1 -0.05
1)
2
0.08...0.1
C 0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9 0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example) Manufacturer
EH s
2005, June Date code (YM)
Pin 1
BCW66 Type code
Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
4 0.2
8
2.13 2.65
0.9
Pin 1
1.15
3.15
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2011-09-19
Package SOT323
BC857...-BC860...
Package Outline 0.9 ±0.1
2 ±0.2 0.3 +0.1 -0.05
0.1 MAX.
3x 0.1
M
0.1 A
1
2
1.25 ±0.1
0.1 MIN.
2.1 ±0.1
3
0.15 +0.1 -0.05
0.65 0.65 0.2
M
A
Foot Print
0.8
1.6
0.6
0.65 0.65
Marking Layout (Example) Manufacturer
2005, June Date code (YM)
BCR108W Type code
Pin 1
Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2
2.3
8
4
Pin 1
2.15
1.1
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2011-09-19
Package TSLP-3-1
BC857...-BC860...
Package Outline Bottom view
0.4 +0.1
0.6 ±0.05 0.5 ±0.035
2
1 ±0.05
3
0.65 ±0.05
3
1)
2
1 1)
0.05 MAX.
0.35 ±0.05
Pin 1 marking
2 x 0.15 ±0.035
2 x 0.25 ±0.035
1
0.25 ±0.035
1)
Top view
1)
1) Dimension applies to plated terminal
Foot Print
R0.1
0.2 0.225
0.2 0.225
0.315
0.35
1
0.3
0.945
0.35
0.45
0.275
0.6
0.355
For board assembly information please refer to Infineon website "Packages"
0.17
0.15 Copper
Solder mask
Stencil apertures
Marking Layout (Example) BFR193L3 Type code
Pin 1 marking Laser marking
Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 0.5
1.16
Pin 1 marking
8
4
0.76
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2011-09-19
BC857...-BC860... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ().
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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