Transcript
PS205 InGaP HBT Gain Block Features
Applications
5 - 3000MHz
Broadband Gain Block
22.2 dB Gain at 0.9GHz
Mobile Infrastructure
+13 dBm P1dB
Cellular, PCS, GSM, GPRS,
+26.4 dBm Output IP3
WCDMA, WiBro, WiMAX
Single Voltage Supply
W-LAN / DMB / ISM
Lead-free Lead free / Green / RoHSRoHS
CATV / DBS
compliant SOT-89 Package
RFID / Fixed Wireless
Functional Diagram 4 3 2 1 Function
Pin No.
RF IN
1
RF OUT / Bias
3
Ground
2,4
Description The PS205 is a high performance InGaP HBT MMIC Amplifier and consists of Darlington pair amplifiers. The amplifier features high linear performance, wideband operation, and high reliability. The PS205 operates from a g voltage g supply pp y and requires q y two DC-blocking g capacitors, p , a bias resistor and an inductor for operation. p only single The device is a general purpose buffer amplifier that offers high dynamic range in a low cost surface-mountable plastic SOT-89 packages.
Specifications Symbol
S21
S11
Parameters
Gain
Input Return Loss
S22
Output Return Loss
P1dB
Output Power @1dB compression
OIP3
Output Third Order intercept
Units
Freq.
Min.
Typ.
dB
75 MHz 900 MHz 1900 MHz 2300 MHz
23.5 23 5 22.2 19.6 18.0
dB
75 MHz 900 MHz 1900 MHz 2300 MHz
-25 -23 -15 -15
dB
75 MHz 900 MHz 1900 MHz 2300 MHz
-20 -27 -12 -10
dBm
75 MHz 900 MHz 1900 MHz 2300 MHz
14 13 11 10
dBm
75 MHz 900 MHz 1900 MHz 2300 MHz
27.5 26.4 23.4 21.3
75 MHz 900 MHz 1900 MHz 2300 MHz
2.0 2.1 2.3 2.4
NF
Noise Figure
dB
V/I
Device voltage / current
V/mA
3.5/35
Rth
Thermal Resistance
°C/W
93
Max.
Test Conditions : T=25°C, Supply Voltage=+4.5V, Rbias=28.5ohm, 50ohm System, OIP3 measured with two tones at an output power of +0dBm/tone separated by 1MHz.
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February 2007
PS205 InGaP HBT Gain Block T i l RF P Typical Performance f ffor 900MH 900MHz T Tuned dA Application li ti Ci Circuit it Supply Bias Voltage = 4.5V, R(bias)= 28.5 ohm, Current= 35mA
MHz
500
900
1500
1900
2300
S21
dB
23.0
22.4
20.8
19.7
18.2
S11
dB
-15
-24
-17
-16
-16
S22
dB
-13 13
-30 30
-17 17
-12 12
-10 10
P1dB
dBm
13.0
13.5
12.8
11.7
10.5
OIP3
dBm
25.4
26.5
25.2
23.5
21.4
Noise Figure
dB
2.2
2.2
2.2
2.3
2.4
Gain vs. Frequency
o
15 0.5
-10
-20
+25 C o -40 C o +85 C 1.5
2.0
-40 0.5
2.5
1.0
Frequency(GHz)
Output IP3 vs. Frequency
P1dB(dBm m)
21
-50 0.5
2.5
1.0
1.5
2.0
2.5
Frequency(GHz)
NF vs. Frequency
5
14
4
12
3
10
o
+25 C o -40 C o +85 C
2
o
+25 C o -40 C o +85 C
8
1.0
1.5
2.0
6 0.5
2.5
1.0
Frequency(GHz)
1 o
+25 C 1.5
2.0
20 15 10 5
Gain Output Power -15
2.5
1.0
-10
-5
0
1.5
2.0
2.5
Frequency(GHz)
Output Power/Gain vs. Input Power @1.9GHz
Output Power/Gain vs. Input Power @0.9GHz
0 -20
0 0.5
Frequency(GHz)
25
25 Output P Power(dBm)/Gain(dB)
OIP3(dBm m)
2.0
P1dB vs. Frequency
16
24
15 0.5
1.5 Frequency(GHz)
27
18
o
+25 C o -40 C o +85 C
-40
NF(dB)
30
-30
o
+25 C o -40 C o +85 C
-30
1.0
-20
S22(dB)
21
Output Return Loss
0
-10 S11(dB)
Gain(dB)
24
18
Input Return Loss
0
Output Power(dBm)/Gain(dB)
27
Frequency
5
20 15 10
5 0 -20
Gain Output Power
-15
-10
-5
0
5
Input Power(dBm)
Input Power(dBm)
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February 2007
PS205 InGaP HBT Gain Block Recommended Bias Values
900MH T 900MHz Tuned dA Application li ti Ci Circuit it Supply Voltage
Supply Voltage
R bias Value
Size
4.5 V
28.5 Ω
0805
5V
47.0 Ω
1210
6V
71.0 Ω
1210
7V
99 0 Ω 99.0
2010
8V
128.0 Ω
2010
10 V
185.0 Ω
2010
12 V
242.0 Ω
2512
R Bias 1uF
56pF
22nH RF IN
RF OUT
100pF
56pF
Typical RF Performance for 50 -500MHz 500MHz Tuned Application Circuit Supply Bias Voltage = 4.5V, R(bias)= 28.5ohm, Current= 35mA
Frequency
MHz
75
125
300
500
S21 : Gain
dB
23.7
23.7
23.4
23.0
S11 : Input Return Loss
dB
-27
-29
-21
-17
S22 : Output Return Loss
dB
-21
-22
-19
-17
Output P1dB
dBm
14.1
14.1
13.9
13.6
Output IP3 @0dBm
dBm
27.7
27.7
27.8
26.9
Noise Figure
dB
2.0
2.1
2.2
2.3
Supply Voltage
Gain vs. Frequency
28
1 F 1uF
820nH
RF IN
10nF
26 S21(dB)
R Bias
24 22
RF OUT 20
10nF
18
10nF
o
+25 C 0
100
200
300
400
500
600
Frequency(MHz)
Input Retrun Loss
0
Output Retrun Loss
0
-10
S22(dB)
S11(dB)
-10 -20
20 -20 -30 o
o
+25 C
+25 C -40
0
100
200
300
400
500
-30
600
0
100
200
300
400
500
600
Frequency(MHz)
Frequency(MHz)
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February 2007
PS205 InGaP HBT Gain Block Absolute Maximum Ratings Parameter
Rating
Unit
Device Voltage
+3.7
V
Device Current
130
mA
RF Power Input
0
dBm
Storage Temperature
-55 to +125
°C
A bi t Operating Ambient O ti Temperature T t
-40 40 tto +85 85
°C
Junction Temperature
155
°C
Operation of this device above any of these parameters may cause permanent damage.
Lead-free /RoHS Compliant / Green SOT-89 Package Outline
ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 2(Passes at 2000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020
Evaluation Board Layout (4x4)
Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer l layers near the h part to ensure optimal i l thermal h l performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink.
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February 2007
