Ir Irf7389pbf (71-158-01)

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2002-02-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-158-01 IRF7389 HEXFET SO-8 PD - 91645 IRF7389 PRELIMINARY HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 N - C H A N N EL M O S FE T 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 N-Ch P-Ch 30V -30V VDSS RDS(on) 0.029Ω 0.058Ω P -C H A N N E L M O S F E T T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current… TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation … TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range ID IDM IS Maximum P-Channel N-Channel 30 7.3 5.9 30 2.5 -5.3 -4.2 -30 -2.5 2.5 1.6 PD EAS IAR EAR dv/dt TJ, TSTG -30 ± 20 82 4.0 Units V A W 140 -2.8 0.20 mJ A mJ V/ ns 3.8 -2.2 -55 to + 150 °C Symbol Limit Units RθJA 50 °C/W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient … www.irf.com 1 4/14/98 IRF7389 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Min. 30 -30 — — — — — — 1.0 -1.0 — — — — — — –– — — — — — — — — — — — — — — — — — — — — N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current I GSS Gate-to-Source Forward Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Typ. Max. — — — — 0.022 — 0.022 — 0.023 0.029 0.032 0.046 0.042 0.058 0.076 0.098 — — — — 14 — 7.7 — — 1.0 — -1.0 — 25 — -25 — ±100 22 33 23 34 2.6 3.9 3.8 5.7 6.4 9.6 5.9 8.9 8.1 12 13 19 8.9 13 13 20 26 39 34 51 17 26 32 48 650 — 710 — 320 — 380 — 130 — 180 — Units V V/°C Ω V S µA nA Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, ID = 5.8A „ VGS = 4.5V, ID = 4.7A „ VGS = -10V, ID = -4.9A „ VGS = -4.5V, ID = -3.6A „ VDS = VGS, I D = 250µA VDS = VGS, ID = -250µA VDS = 15V, ID = 5.8A „ VDS = -15V, ID = -4.9A „ VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, T J = 55°C VDS = -24V, VGS = 0V, TJ = 55°C VGS = ±20V N-Channel ID = 5.8A, VDS = 15V, VGS = 10V nC „ P-Channel ID = -4.9A, V DS = -15V, VGS = -10V N-Channel VDD = 15V, ID = 1.0A, RG = 6.0Ω, RD = 15Ω ns „ P-Channel VDD = -15V, ID = -1.0A, RG = 6.0Ω, RD = 15Ω N-Channel VGS = 0V, V DS = 25V, ƒ = 1.0MHz pF P-Channel VGS = 0V, V DS = -25V, ƒ = 1.0MHz Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions — — 2.5 — — -2.5 A — — 30 — — -30 — 0.78 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V ƒ V — -0.78 -1.0 TJ = 25°C, IS = -1.7A, VGS = 0V ƒ — 45 68 N-Channel ns — 44 66 TJ = 25°C, I F =1.7A, di/dt = 100A/µs — 58 87 P-Channel „ nC TJ = 25°C, I F = -1.7A, di/dt = 100A/µs — 42 63 Notes:  Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 22 ) … Surface mounted on FR-4 board, t ≤ 10sec. ‚ N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ƒ N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A. 2 www.irf.com IRF7389 N-Channel 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20µs PULSE WIDTH TJ = 25°C A 1 0.1 1 10 3.0V 20µs PULSE WIDTH TJ = 150°C A 1 10 0.1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 Fig 2. Typical Output Characteristics 100 I S D , Reverse Drain Current (A) 100 I D , Drain-to-Source Current (A) 1 V D S , Drain-to-Source Voltage (V) TJ = 25°C T J = 150°C 10 V D S = 10V 20µs PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 V G S , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A T J = 150°C 10 TJ = 25°C V G S = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 A 1.6 V S D , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF7389 RDS (on) , Drain-to-Source On Resistance (Ω) R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 N-Channel ID = 5.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 0.040 V G S = 4.5V 0.036 0.032 0.028 0.024 V G S = 10V 0.020 80 100 120 140 160 A 0 10 TJ , Junction Temperature ( °C) 200 E A S , Single Pulse Avalanche Energy (mJ) 0.10 0.08 0.06 I D = 5.8A 0.04 0.02 0.00 0 3 6 9 12 V G S , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 40 Fig 6. Typical On-Resistance Vs. Drain Current 0.12 RDS (on) , Drain-to-Source On Resistance (Ω) 30 I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature 4 20 15 A TOP BOTTOM 160 IID D 1.8A 3.2A 4.0A 120 80 40 0 A 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 8. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7389 N-Channel V GS C is s C rs s C o ss 900 = = = = 20 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd C iss C oss 600 C rss 300 0 A 1 10 ID = 5.8A VDS = 15V VGS , Gate-to-Source Voltage (V) C , Capacitance (pF) 1200 100 16 12 8 4 0 0 10 20 30 40 QG , Total Gate Charge (nC) V D S , D rain-to-S ourc e V oltage (V ) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 P DM 0.02 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7389 100 P-Channel 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 10 -3.0V 20µs PULSE WIDTH TJ = 25°C A 1 0.1 1 10 -3.0V 20µs PULSE WIDTH TJ = 150°C A 1 0.1 10 Fig 12. Typical Output Characteristics 100 -IS D , Reverse Drain Current (A) -I D , Drain-to-Source Current (A) 10 Fig 13. Typical Output Characteristics 100 T J = 25°C TJ = 150°C 10 V D S = -10V 20µs PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -V G S , Gate-to-Source Voltage (V) Fig 14. Typical Transfer Characteristics 6 1 -V D S , Drain-to-Source Voltage (V) -V D S , Drain-to-Source Voltage (V) A TJ = 150°C 10 TJ = 25°C V G S = 0V 1 0.4 0.6 0.8 1.0 1.2 A 1.4 -VS D , Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage www.irf.com IRF7389 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS(on) , Drain-to-Source On Resistance ( Ω ) P-Channel ID = 4.9A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 0.6 0.5 0.4 0.3 0.1 V G S = -10V 0.0 80 100 120 140 160 0 TJ , Junction Temperature ( ° C) 10 20 Fig 17. Typical On-Resistance Vs. Drain Current 0.16 0.12 I D = -4.9A 0.04 0.00 0 3 6 9 12 15 -VGS , Gate -to-Source Voltage (V) Fig 18. Typical On-Resistance Vs. Gate Voltage www.irf.com A EAS , Single Pulse Avalanche Energy (mJ) 300 0.08 30 -ID , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature RDS(on) , Drain-to-Source On Resistance ( Ω ) V G S = -4.5V 0.2 ID -1.3A -2.2A BOTTOM -2.8A TOP 250 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 19. Maximum Avalanche Energy Vs. Drain Current 7 A IRF7389 VGS = 0V Ciss = Cgs + Cgd + Cds Crss = Cgd 1200 20 f = 1 MHz VDS =-15V C, Capacitance (pF) Coss = Cds + Cgd 1000 Ciss 800 C oss 600 400 Cr s s 200 0 A 1 ID = -4.9A SHORTED -VGS , Gate-to-Source Voltage (V) 1400 P-Channel 10 100 16 12 8 4 0 0 10 20 30 40 QG , Total Gate Charge (nC) -V D S , Drain-to-Source Voltage (V) Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 PDM 0.02 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7389 Package Outline SO8 Outline DIM D -B- 5 8 7 6 5 1 2 3 e 6X 0.25 (.010) 4 M A M K x 45° e1 θ A -C- 0.10 (.004) B 8X 0.25 (.010) L 8X A1 6 C 8X M C A S B S MILLIMETERS MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 5 H E -A- INCHES MIN e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 K .011 .019 0.28 5.80 0.48 6.20 L 0.16 .050 0.41 1.27 θ 0° 8° 0° 8° RECOMMENDED FOOTPRINT NOTES: 0.72 (.028 ) 8X 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6.46 ( .255 ) DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 1.78 (.070) 8X MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X Part Marking Information SO8 EXAM PLE : TH IS IS AN IR F7 101 31 2 100 IN TER N ATIO N AL R EC TIF IER LO G O XXXX F710 1 TOP www.irf.com D ATE C O DE (YW W ) Y = LAST D IGIT O F TH E YEAR W W = W EEK PAR T N UM BER W AFER LO T C O D E (LAST 4 D IG ITS) BO TTO M 9 IRF7389 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2.3 ( .4 84 ) 1 1.7 ( .4 61 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.0 0 (12 .9 92 ) MAX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/98 10 www.irf.com