Transcript
2002-03-28
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ELFA artikelnr 71-168-74 IRFP3703 HEXFET TO-247
PD - 93917
IRFP3703
SMPS MOSFET
HEXFET® Power MOSFET Applications l Synchronous Rectification l Active ORing
VDSS
RDS(on) max
ID
30V
0.0028Ω
210A
Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG
Max. 210 100
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Units A
1000 230 3.8 1.5 ± 20 5.0 -55 to + 175
W W/°C V V/ns °C
Thermal Resistance Parameter RθJC RθCS RθJA
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
Max.
Units
––– 0.24 –––
0.65 ––– 40
°C/W
Typical SMPS Topologies l l
Forward and Bridge Converters with Synchronous Rectification for Telecom and Industrial Applications Offline High Power AC/DC Convertors using Synchronous Rectification
Notes through are on page 8
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1 6/01/00
IRFP3703 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS
RDS(on) VGS(th) IDSS IGSS
Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 2.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage –––
Typ. ––– 0.028 2.3 2.8 ––– ––– ––– ––– –––
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 2.8 VGS = 10V, ID = 76A mΩ 3.9 VGS = 7.0V, ID = 76A 4.0 V VDS = VGS, ID = 250µA 20 VDS = 24V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 200 VGS = 20V nA -200 VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. 150 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 209 62 42 18 123 53 24 8250 3000 290 10360 3060 2590
Max. Units Conditions ––– S VDS = 24V, ID = 76A ––– ID = 76A ––– nC VDS = 24V ––– VGS = 10V, ––– VDD = 15V, VGS = 10V ––– ID = 76A ns ––– RG = 1.8Ω ––– VGS = 10V ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 24V
Avalanche Characteristics Parameter EAS IAR EAR
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
Max.
Units
––– ––– –––
1700 76 23
mJ A mJ
Diode Characteristics IS I SM
VSD t rr Q rr
2
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units –––
––– 210
–––
––– 1000
––– ––– –––
0.8 80 185
A
1.3 120 275
V ns nC
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 76A, VGS = 0V TJ = 25°C, IF = 76A, V DS = 16V di/dt = 100A/µs
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IRFP3703 10000
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
100
100
4.5V
10
20µs PULSE WIDTH TJ = 25 °C
1 0.1
1
10
100
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
TJ = 25 ° C TJ = 175 ° C
100
V DS = 15V 20µs PULSE WIDTH 5.0
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1
10
100
Fig 2. Typical Output Characteristics
10000
10 4.0
20µs PULSE WIDTH TJ = 175 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
4.5V
10 0.1
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 260A
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = 10V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRFP3703 20
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
C, Capacitance (pF)
12000 10000
Ciss 8000 6000
Coss 4000 2000
ID = 76A VDS = 24V
VGS, Gate-to-Source Voltage (V)
14000
16
12
8
4
FOR TEST CIRCUIT SEE FIGURE 13
Crss 0
0 1
10
100
0
40
80
120
160
200
240
280
320
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
I D , Drain Current (A)
100
TJ = 175 ° C
1000
10
TJ = 25 ° C
100us
100 1ms
1
0.1 0.0
V GS = 0 V 0.4
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
10us
TC = 25 ° C TJ = 175 ° C Single Pulse
10 2.4
1
10ms
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP3703 250
RD
VDS LIMITED BY PACKAGE
VGS 200
D.U.T.
I D , Drain Current (A)
RG
+
-VDD
150
10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
100
Fig 10a. Switching Time Test Circuit 50
VDS 90%
0 25
50
75
100
125
150
175
TC , Case Temperature ( °C) 10% VGS td(on)
Fig 9. Maximum Drain Current Vs. Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC)
1
D = 0.50 0.20 0.1
0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP3703 ID 31A 54A 76A
TOP
5000
D R IV E R
L
VDS
EAS , Single Pulse Avalanche Energy (mJ)
6000
1 5V
BOTTOM
4000
D .U .T
RG
+ V - DD
IA S 20V
0 .0 1 Ω
tp
A
3000
2000
Fig 12a. Unclamped Inductive Test Circuit
1000
0 25
V (B R )D SS tp
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS
Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T.
QG
50KΩ 12V
.2µF .3µF
10 V QGS
QGD
D.U.T.
+ V - DS
VGS
VG
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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IRFP3703 Peak Diode Recovery dv/dt Test Circuit +
D.U.T
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+
-
-
+
• • • •
RG
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
Driver Gate Drive P.W.
D=
Period
+ -
VDD
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
Body Diode
VDD
Forward Drop
Inductor Curent Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFET
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IRFP3703 TO - 247 Package Outline Dimensions are shown in millimeters (inches)
-D -
3.65 (.143 ) 3.55 (.140 )
15.90 (.6 26) 15.30 (.6 02) -B -
0.25 (.01 0) M -A5.50 (.21 7)
2 0.30 (.80 0) 1 9.70 (.77 5)
2X 1
2
5.50 (.2 17) 4.50 (.1 77)
3 -C -
1 4.80 (.583 ) 1 4.20 (.559 )
2 .40 (.094) 2 .00 (.079) 2X 5.45 (.21 5) 2X
D B M
5.3 0 (.20 9) 4.7 0 (.18 5) 2 .50 (.089) 1 .50 (.059) 4
NOTES: 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7 -A C .
4 .30 (.170 ) 3 .70 (.145 )
0 .80 (.031) 3X 0 .40 (.016)
1 .40 (.056 ) 3X 1 .00 (.039 ) 0 .25 (.010 ) M 3.4 0 (.1 33) 3.0 0 (.1 18)
C A S
L E A D A S S IG N M E N T S
2.60 (.10 2) 2.20 (.08 7)
1 2 3 4
-
GATE D R A IN SOURCE D R A IN
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.6mH RG = 25Ω, I AS = 76A.
ISD ≤ 76A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A
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