Transcript
PD - 9.1576
IRG4PH50K Short Circuit Rated UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR Features
C
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High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V, TJ = 125°C, VGE = 15V
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Combines low conduction losses with high switching speed
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VCES = 1200V VCE(on) typ. = 2.77V
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Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
@VGE = 15V, IC = 24A
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n-channel
Benefits ●
As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI/Noise and switching losses in the Diode and IGBT
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Latest generation 4 IGBTs offer highest power density motor controls possible
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This part replaces the IRGPH50K and IRGPH50M devices
TO-247 AB
Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ➂ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
Units
1200 45 24 90 90 10 ±20 190 200 78 -55 to +150
V A
µs V mJ W
°C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m)
Thermal Resistance Parameter RθJC RθCS RθJA Wt
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Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
Max.
— 0.24 — 6 (0.21)
0.64 — 40 —
Units °C/W g (oz)
C-1
IRG4PH50K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ
VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES
IGES
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 0.91 — V/°C VGE = 0V, IC = 2.0mA — 2.77 3.5 IC = 24A VGE = 15V Collector-to-Emitter Saturation Voltage — 3.28 — IC = 45A see figures 2, 5 V — 2.54 — IC = 24A , TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 2.0mA Forward Transconductance 13 19 — S VCE = 100 V, IC = 24A — — 250 VGE = 0V, VCE = 1200V Zero Gate Voltage Collector Current µA — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 5000 VGE = 0V, VCE = 1200V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc
Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time
Min. — — — — — — — — — — 10
td(on) Turn-On Delay Time — tr Rise Time — td(off) Turn-Off Delay Time — tf Fall Time — Total Switching Loss — Ets LE Internal Emitter Inductance — Cies Input Capacitance — Coes Output Capacitance — Cres Reverse Transfer Capacitance — Notes: ➀ Repetitive rating; VGE = 20V, pulse width limited bymax. junction temperature. (see figure 13b) ➁ VCC = 80% (VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (see figure 13a)
C-2
Typ. 180 25 70 36 27 200 130 1.21 2.25 3.46 — 35 29 380 280 7.80 13 2800 140 53
Max. Units Conditions 270 IC = 24A 38 nC VCC = 400V see figure 8 110 VGE = 15V — — TJ = 25°C ns 300 IC = 24A, VCC = 960V 190 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ see figures 9,10,14 4.1 — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 5.0Ω — TJ = 150°C, — IC = 24A, VCC = 960V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ see figures 10,11,14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V see figure 7 — ƒ = 1.0MHz
➂ Repetitive rating; pulse width limited by maximum junction temperature. ➃ Pulse width ≤ 80µs; duty factor ≤ 0.1%. ➄ Pulse width 5.0µs, single shot.
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IRG4PH50K
60 F o r b o th :
50
Load Current ( A )
Tria n g u la r w a ve :
Duty cycle: 50% TJ = 125° C T sink = 90°C G ate drive as specified Po w e r D is s ip a tio n = 4 0 W
C la m p vo lta g e : 8 0 % o f ra te d
40 S qu are wave: 30
6 0 % o f ra te d v o lta g e
20
10
Id e al d io de s
A
0 0.1
1
10
100
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)
100
TJ = 150 °C 10
TJ = 25 ° C
V GE = 15V 20µs PULSE WIDTH
1 1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics www.irf.com
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
TJ = 150 ° C 10
TJ = 25 °C
V CC = 50V 5µs PULSE WIDTH
1 5
6
7
8
9
10
11
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics C-3
IRG4PH50K 4.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
50
40
30
20
10
0 25
50
75
100
125
150
VGE = 15V 80 us PULSE WIDTH IC = 48 A
3.5
3.0
IC = 24 A 2.5
IC = 12 A 2.0
1.5 -60 -40 -20
TC , Case Temperature (° C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C)
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.1
0.01
0.001 0.00001
0.10 0.05 0.02 0.01
P DM
SINGLE PULSE (THERMAL RESPONSE)
t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-4
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IRG4PH50K
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
3000
Cies
2000
1000
Coes Cres
0 1
10
20
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
4000
16
12
8
4
0
100
0
VCE , Collector-to-Emitter Voltage (V)
100
= 960V = 15V = 25 ° C = 24A
6.0
5.0
4.0
3.0 0
10
20
30
40
RG, Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com
80
120
160
200
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC V GE TJ IC
40
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
7.0
VCC = 400V I C = 24A
50
RG = 5.0Ω Ohm VGE = 15V VCC = 960V IC = 48 A
10
IC = 24 A IC = 12 A
1
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs. Junction Temperature C-5
IRG4PH50K RG TJ VCC 20 VGE
1000
= 5.0Ω Ohm = 150° C = 960V = 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
25
100
15
10
5
10
SAFE OPERATING AREA
0 0
10
20
30
40
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
C-6
VGE = 20V T J = 125 oC
50
1 1
10
100
1000
10000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
