Transcript
Bulletin I2183 11/04
SAFEIR Series 40TPS16PbF PHASE CONTROL SCR
VT
Lead-Free ("PbF" suffix)
< 1.45V @ 40A
ITSM = 500A VRRM = 1600V Description/ Features The 40TPS16PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125°C junction temperature. Low Igt parts available. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines.
Package Outline
Major Ratings and Characteristics Characteristics IT(AV)
Sinusoidal
Values
Units
35
A
55
A
1600
V
waveform IRMS VRRM/ VDRM ITSM
500
A
1.45
V
dv/dt
1000
V/µs
di/dt
100
A/µs
- 40 to 125
°C
VT
@ 40 A, TJ = 25°C
TJ
Document Number: 94389
TO-247AC
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40TPS16PbF SAFEIR Series Bulletin I2183 11/04
Voltage Ratings Part Number
VRRM/ V DRM, max. repetitive
VRSM , maximum non repetitive
IRRM/ I DRM
peak and off-state voltage
peak reverse voltage
125°C
V
V
mA
1600
1700
10
40TPS16PbF
Absolute Maximum Ratings Parameters IT(AV)
IT(RMS) Max. Continuous RMS
Conditions
40TPS16 Units
Max. Average On-state Current
35
A
@ TC = 79° C, 180° conduction half sine wave
A
10ms Sine pulse, rated VRRM applied
Initial
10ms Sine pulse, no voltage reapplied
TJ = TJ max.
55
On-state Current As AC switch ITSM 2
It
Max. Peak One Cycle Non-Repetitive
500
Surge Current
600
2
Max. I t for Fusing
1250
2
A s
1760 2
I √t
2
Max. I √t for Fusing
VT(TO)1 Low Level Value of Threshold
10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied
12500
2
A √s
t = 0.1 to 10ms, no voltage reapplied
1.02
V
TJ = 125°C
Voltage VT(TO)2 High Level Value of Threshold
1.23
Voltage rt1
Low Level Value of On-state
9.74
mΩ
Slope Resistance rt2
High Level Value of On-state
7.50
Slope Resistance VTM
Max. Peak On-state Voltage
1.85
V
di/dt
Max. Rate of Rise of Turned-on Current
100
A/µs mA
@ 110A, TJ = 25°C TJ = 25°C
IH
Max. Holding Current
150
IL
Max. Latching Current
300
IRRM /
Max. Reverse and Direct
0.5
TJ = 25°C
IDRM
Leakage Current
10
TJ = 125°C
Max. Rate of Rise
1000
dv/dt
V/µs
VR = rated VRRM/ VDRM
TJ = TJ max., linear to 80% V DRM , R g-k = open
of Off-state Voltage
Document Number: 94389
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40TPS16PbF SAFEIR Series Bulletin I2183 11/04
Triggering Parameters PGM Max. peak Gate Power
10
PG(AV) Max. average Gate Power
2.5
IGM
Max. peak Gate Current
IGT
W
2.5
A
10
V
- VGM Max. peak negative Gate Voltage VGT
Conditions
40TPS16 Units
Max. required DC Gate Voltage
4.0
TJ = - 40°C
Anode supply = 6V
to trigger
2.5
TJ = 25°C
resistive load
1.7
TJ = 125°C
Max. required DC Gate Current
270
to trigger
150
mA
TJ = 25°C
80
TJ = 125°C
40
TJ = - 40°C
TJ = 25°C, for 40TPS08A
VGD
Max. DC Gate Voltage not to trigger
0.25
V
IGD
Max. DC Gate Current not to trigger
6
mA
TJ = 125°C, V DRM = rated value
Thermal-Mechanical Specifications Parameters
40TPS16 Units
TJ
Max. Junction Temperature Range
- 40 to 125
Tstg
Max. Storage Temperature Range
- 40 to 125
RthJC Max. Thermal Resistance Junction
0.6
Conditions
°C
°C/W
DC operation
to Case RthJA Max. Thermal Resistance Junction
40
to Ambient RthCS Max. Thermal Resistance Case
0.2
Mounting surface, smooth and greased
to Heatsink wt
Approximate Weight
T
Mounting Torque
6 (0.21)
g (oz.)
Min.
6 (5)
Kg-cm
Max.
12 (10)
(lbf-in)
Case Style
TO-247AC
Marking Device
40TPS16
Document Number: 94389
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40TPS16PbF SAFEIR Series
40TPS.. Series R thJC (DC) = 0.6 °C/ W
120 110
Conduction Angle
100
30°
90° 120°
180°
80
0
10
20
30
40
120 110
Conduction Period
100 30°
90
60°
90° 120°
80
180° DC
70 0
10
20
30
40
50
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
180° 120° 90° 60° 30°
40
40TPS.. Series RthJC (DC) = 0.6 °C/ W
Average On-state Current (A)
60 50
130
Fig. 1 - Current Rating Characteristics
RMS Limit
30 20
Conduction Angle
40TPS.. Series TJ= 125°C
10 0 5
10
15
20
25
30
35
Maximum Averag e On-state Power Loss (W)
70
0
Peak Half Sine Wave On-state Current (A)
60°
90
Maximum Allowable Case Temperature (°C)
130
60
80 DC 180° 120° 90° 60° 30°
70 60 50
40 RMSLimit 30
Conduction Period
20 40TPS.. Series TJ = 125°C
10 0
40
0
10
20
30
40
50
60
Avera ge On-sta te Current (A)
Avera ge On-sta te Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
550
At Any Ra ted Load Condition And With Rated V RRM Ap plied Following Surge. Initia l TJ= 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s
500 450 400 350 300 250
40TPS.. Series 1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Document Number: 94389
Peak Half Sine Wa ve On-state Current (A)
Maximum Avera g e On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Bulletin I2183 11/04
600
Ma ximum Non Rep etitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reap p lied Rated VRRM Reap p lied
550 500 450 400 350 300
40TPS.. Series
250 0.01
0.1
1
Pulse Tra in Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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40TPS16PbF SAFEIR Series Bulletin I2183 11/04
Instanta neous On-sta te Current (A)
100
10
TJ= 25°C TJ= 125°C
40TPS.. Series 1 0.5
1
1.5
2
Instantaneous On-state Voltag e (V)
Fig. 7 - On-state Voltage Drop Characteristics
10
Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for <= 30% rated di/ dt: 20 V, 65 ohms tr = 1 µs, tp >= 6 µs
(1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a)
(b)
VGD IGD 0.1 0.001
TJ = -40 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4) (3)
40TPS..
0.01
0.1
(2) (1)
Frequenc y Limited by PG(AV) 1
10
100
1000
Instantaneous Gate Current (A)
Transient Thermal Impeda nc e Z thJC (°C/W)
Fig. 8 - GateCharacteristics 1
0.1
Steady State Value (DC Opera tion)
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
Single Pulse 40TPS.. Series 0.01 0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
Document Number: 94389
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40TPS16PbF SAFEIR Series Bulletin I2183 11/04
Outline Table 15 .90 (0 .626 )
3. 65 (0 .14 4) 3. 55 (0 .13 9)
DIA.
5. 30 ( 0 .20 9) 4.70 ( 0.185)
15 .30 (0 .602 )
2.5 ( 0.098) 1.5 ( 0.059)
5. 70 ( 0 .22 5) 5.30 ( 0.208) 20 .30 ( 0 .800 ) 19 .70 ( 0 .775 )
5.50 ( 0.217) 4. 50 ( 0 .17 7) 1
2
(2 PLCS.)
3
14. 80 ( 0.583) 14 .20 (0 .559 )
4. 30 (0 .17 0) 3. 70 (0 .14 5)
1. 40 (0 .05 6)
2. 20 ( 0 .08 7)
2. 40 (0 .09 5)
M AX .
2 (A)
M AX.
1. 00 (0 .03 9)
0.80 ( 0.032) 0. 40 (0 .21 3)
10. 94 ( 0.430) 10 .86 ( 0 .427 )
1 (K) (G) 3
Dimensions in millimeters and inches
Marking Information
EXAMPLE: THIS IS A 40TPS16 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN ASSEMBLY LINE "H"
Document Number: 94389
INTERNATIONAL RECTIFIER LOGO
PART NUMBER
40TPS16 P035H
56
ASSEMBLY LOT CODE
57
DATE CODE P = LEAD-FREE YEAR 0 = 2000 WEEK 35 LINE H
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40TPS16PbF SAFEIR Series Bulletin I2183 11/04
Ordering Information Table Device Code
40
T
P
S
1
2
3
4
1
-
2
-
16 PbF 5
6
Current Rating (40 = 40A) Circuit Configuration: T = Thyristor
3
-
Package: T = TO-247
4
-
Type of Silicon:
5
-
Voltage Rating (16 = 1600V)
6
-
y none = Standard Production
S = Standard Recovery Rectifier
y PbF = Lead-Free
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 11/04
Document Number: 94389
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Legal Disclaimer Notice Vishay
Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN® are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.
Document Number: 99901 Revision: 12-Mar-07
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