Irf244, Irf245, Irf246, Irf247 N-channel Power Mosfets

Transcript

IRF244, IRF245, IRF246, IRF247 Semiconductor 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.28Ω and 0.34Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 275V, 250V DC Rated - 120V AC Line System Operation Formerly developmental type TA17423. • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER PACKAGE G BRAND IRF244 TO-204AA IRF244 IRF245 TO-204AA IRF245 IRF246 TO-204AA IRF246 IRF247 TO-204AA IRF247 S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 5-1 File Number 2209.2 IRF244, IRF245, IRF246, IRF247 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . TL Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .Tpkg IRF244 IRF245 IRF246 IRF247 UNITS 250 250 14 8.8 56 ±20 125 1.0 550 -55 to 150 250 250 13 8.0 52 ±20 125 1.0 550 -55 to 150 275 275 14 8.8 56 ±20 125 1.0 550 -55 to 150 275 275 13 8.0 52 ±20 125 1.0 550 -55 to 150 V V A A A V W W/oC mJ oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS 250 - - V 275 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA IRF244, IRF246 14 - - A IRF245, IRF247 13 - - A - - ±100 nA IRF244, IRF246 - 0.20 0.28 Ω IRF245, IRF247 - 0.24 0.34 Ω 6.7 10 - S - 16 24 ns - 67 100 ns - 53 80 ns - 49 74 ns - 39 59 nC - 6.6 - nC - 20 - nC Drain to Source Breakdown Voltage SYMBOL BVDSS IRF244, IRF245 TEST CONDITIONS VGS = 0V, ID = 250µA (Figure 10) IRF246, IRF247 Gate to Threshold Voltage Zero-Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On-State Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) VGS = VDS, ID = 250µA VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = ±20V VGS = 10V, ID = 8A, (Figures 8, 9) VDS ≥ 50V, ID = 8A, (Figure 12) VDD = 125V, ID ≈ 14A, RG = 9.1Ω, RL = 8.9Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VGS = 10V, ID = 14A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature 5-2 IRF244, IRF245, IRF246, IRF247 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS TYP MAX UNITS - 1300 - pF Input Capacitance CISS Output Capacitance COSS - 320 - pF Reverse-Transfer Capacitance CRSS - 69 - pF - 5.0 - nH - 12.5 - nH - - 1.0 oC/W - - 30 oC/W MIN TYP MAX UNITS - - 14 A - - 56 A - - 1.8 V 150 300 640 ns 1.6 3.4 7.2 µC - - - - Internal Drain Inductance LD Internal Source Inductance LS Junction to Case RθJC Junction to Ambient RθJA VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) MIN Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S Free Air Operation Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time VSD trr Reverse Recovered Charge QRR Forward Turn-On Time tON TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs Intrinsic Turn-On Time is Negligible, Turn-On Speed is Substantially Controlled by LS + LD NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25Ω, peak IAS = 14A. See Figures 15, 16. 5-3 IRF244, IRF245, IRF246, IRF247 Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 15 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 12 6 3 0 0 50 100 IRF245, IRF247 9 0.2 0 IRF244, IRF246 150 25 50 75 TC, CASE TEMPERATURE (oC) 125 100 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZθJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 10 1 0.5 0.1 0.2 0.1 PDM 0.05 0.02 0.01 0.01 t1 t2 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 0.1 1 10 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 1000 25 100 IRF244, 246 IRF245, 247 10µs IRF244, 246 10 VGS =10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) OPERATION IN THIS REGION IS LIMITED BY rDS(ON) 100µs IRF245, 247 1ms 10ms 1 TC = 25oC TJ = MAX RATED SINGLE PULSE IRF244, IRF245 DC IRF246, IRF247 20 80µs PULSE TEST VGS =6.0V 15 VGS =5.5V 10 VGS = 5.0V 5 VGS =4.5V VGS =4.0V 0.1 0 1 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 0 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 25 50 75 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 5-4 125 IRF244, IRF245, IRF246, IRF247 Typical Performance Curves Unless Otherwise Specified (Continued) 25 100 VDS ≥ 50V 80µs PULSE TEST 10V 20 6.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80µs PULSE TEST 15 5.5V 10 VGS = 5.0V 5 10 TJ = 25oC TJ = 150oC 1 4.5V 4.0V 0.1 0 0 0 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 2.5 3.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VOLTAGE 2.0 ON RESISTANCE (Ω) rDS(ON), DRAIN TO SOURCE 80µs PULSE TEST VGS = 10V 1.5 1.0 VGS = 20V 0.5 0 0 15 30 45 ID, DRAIN CURRENT (A) 60 1.25 2.4 1.8 1.2 0.6 -40 -20 0 20 40 60 3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD PF, CAPACITANCE (C) 2400 1.05 0.95 0.85 1800 CISS 1200 COSS 600 -20 100 120 140 160 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.15 -40 80 TJ, JUNCTION TEMPERATURE (oC) ID = 250µA 0.75 -60 ID = 14A VGS = 10V 0 -60 75 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 10 0 20 40 60 80 0 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) CRSS 0 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRF244, IRF245, IRF246, IRF247 Typical Performance Curves 12 ISD, SOURCE TO DRAIN CURRENT (A) VDS ≥ 50V 80µs PULSE TEST TJ = 25oC 9 TJ = 150oC 6 3 0 102 10 TJ = 25oC TJ = 150oC 1 0.1 0 5 10 15 ID, DRAIN CURRENT (A) 20 25 0 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE (S) 15 Unless Otherwise Specified (Continued) IC = 14A 16 VDS = 50V 12 VDS = 125V VDS = 200V 8 4 0 0 12 24 36 48 60 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 2.0 IRF244, IRF245, IRF246, IRF247 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 0 10% DUT 90% VGS VGS 0 FIGURE 17. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 5-7