Transcript
PD - 91309B
IRF3710 HEXFET® Power MOSFET l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V RDS(on) = 23mΩ
G
ID = 57A
S
Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
Units
57 40 230 200 1.3 ± 20 28 20 5.8 -55 to + 175
A W W/°C V A mJ V/ns °C
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Thermal Resistance Parameter RθJC RθCS RθJA
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Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
Max.
Units
––– 0.50 –––
0.75 ––– 62
°C/W
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IRF3710 Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on) VGS(th) gfs
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Min. 100 ––– ––– 2.0 32 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss Coss Crss EAS
Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
––– ––– ––– –––
V(BR)DSS ∆V(BR)DSS/∆TJ
IGSS
Typ. ––– 0.13 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 12 58 45 47
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 23 mΩ VGS = 10V, ID =28A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 28A 25 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 ––– VDD = 50V ––– ID = 28A ns ––– RG = 2.5Ω ––– VGS = 10V, See Fig. 10 Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 3130 ––– VGS = 0V 410 ––– VDS = 25V 72 ––– pF ƒ = 1.0MHz, See Fig. 5 1060
280 mJ IAS = 28A, L = 0.70mH
D
S
Source-Drain Ratings and Characteristics IS ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 57 ––– ––– showing the A G integral reverse ––– ––– 230 S p-n junction diode. ––– ––– 1.2 V TJ = 25°C, IS = 28A, VGS = 0V ––– 140 220 ns TJ = 25°C, IF = 28A ––– 670 1010 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ISD ≤ 28A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 28A, VGS=10V (See Figure 12)
This is a typical value at device destruction and represents
Starting TJ = 25°C, L = 0.70mH
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
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IRF3710 1000
1000
VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V
100
VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V TOP
10
3.5V 1
20µs PULSE WIDTH Tj = 25°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
0.1
10
3.5V 1
20µs PULSE WIDTH Tj = 175°C 0.1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
1000.00
3.0
I D = 57A
2.5
R DS(on) , Drain-to-Source On Resistance
100.00
T J = 175°C 10.00
T J = 25°C 1.00
VDS = 15V 20µs PULSE WIDTH
0.10 3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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9.0
2.0
(Normalized)
ID, Drain-to-Source Current (Α )
10
VDS, Drain-to-Source Voltage (V)
1.5
1.0
0.5
V GS = 10V
0.0 -60
-40
-20
0
20
40
60
80
TJ , Junction Temperature
100 120 140 160 180
( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF3710 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
C, Capacitance(pF)
10000
Ciss 1000
Coss
Crss
100
12.0 ID= 28A VGS, Gate-to-Source Voltage (V)
100000
10.0
VDS= 80V VDS= 50V VDS= 20V
8.0 6.0 4.0 2.0 0.0
10 1
10
0
100
60
80
100
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000.00
ISD, Reverse Drain Current (A)
40
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
100.00
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
TJ = 175°C 10.00
T J = 25°C
1.00
100µsec 10 1msec
10msec
1 Tc = 25°C Tj = 175°C Single Pulse
VGS = 0V 0.10
0.1 0.0
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
20
2.0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF3710 60
RD
VDS VGS
50
D.U.T.
RG
+
-VDD
I D , Drain Current (A)
40
V GS
30
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit VDS
10
90% 0 25
50
75
100
TC , Case Temperature
125
150
175
( °C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms 1
(Z thJC)
D = 0.50
Thermal Response
0.20
0.1
0.10 P DM
0.05 0.02
SINGLE PULSE (THERMAL RESPONSE)
t1 t2
0.01 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001
0.0001
0.001
0.01
t1/ t 2
J = P DM x Z thJC
+TC
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF3710 550
ID
15V
TOP
D.U.T
RG 20V VGS
IAS
440
DRIVER
+ V - DD
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
11A 20A 28A
BOTTOM
330
220
110
0 25
50
75
100
125
150
175
( °C)
Starting T , Junction Temperature J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS
Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T.
50KΩ
QG
12V
.2µF .3µF
VGS QGS
D.U.T.
QGD
+ V - DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF3710 Peak Diode Recovery dv/dt Test Circuit +
D.U.T*
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+
-
-
+
RG
• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
VGS
*
+ -
VDD
Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W.
Period
D=
P.W. Period
[VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs
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IRF3710 TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information (;$03/( 7+,6,6$ 1,5) /2 7&2'( $66(0%/('2 1:: ,1 7+ ($66(0%/</,1(& Note: "P" in assembly line position indicates "Lead-Free"
,17(51 $7,2 1$/ 5(&7,),(5 /2 *2 $66(0%/< /27&2 '(
3$5718 0%(5 '$7(&2 '( <($5 :((. /,1(&
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/05
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