Transcript
PD - 95252
SMPS MOSFET
IRF6217PbF HEXFET® Power MOSFET
Applications Reset Switch for Active Clamp Reset DC to DC converters l Lead-Free
VDSS
l
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l
RDS(on) max 2.4W@VGS =-10V
-150V
S
S S G
1
8
2
7
3
6
4
5
ID -0.7A
A D D D D
SO-8
Top View
Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
Units
-0.7 -0.5 -5.0 2.5 0.02 ± 20 4.5 -55 to + 150
A W W/°C V V/ns °C
300 (1.6mm from case )
Thermal Resistance Symbol RθJL RθJA
Parameter Junction-to-Drain Lead Junction-to-Ambient
Typ.
Max.
Units
––– –––
20 50
°C/W
Notes through are on page 8
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1 10/04/04
IRF6217PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. -150 ––– ––– -3.0 ––– ––– ––– –––
Typ. ––– -0.17 ––– ––– ––– ––– ––– –––
Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, I D = -1mA 2.4 Ω VGS = -10V, ID = -0.42A -5.0 V VDS = VGS, ID = -250µA -25 VDS = -150V, VGS = 0V, TJ = 25°C µA -250 VDS = -120V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. 0.55 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 6.0 1.6 2.8 12 7.2 14 16 150 30 10 150 15 45
Max. Units Conditions ––– S VDS = -50V, ID = -0.42A 9.0 ID = -0.42A 2.4 nC VDS = -120V 4.2 VGS = -10V, ––– VDD = -75V ––– I D = -0.42A ns ––– RG = 6.2Ω ––– VGS = -10V ––– VGS = 0V ––– VDS = -25V ––– pF ƒ = 1.0KHz ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0KHz ––– VGS = 0V, VDS = -120V, ƒ = 1.0KHz ––– VGS = 0V, VDS = 0V to -120V
Avalanche Characteristics Parameter EAS IAR
Single Pulse Avalanche Energy Avalanche Current
Typ.
Max.
Units
––– –––
15 -1.4
mJ A
Diode Characteristics IS ISM
VSD trr Qrr
2
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units –––
–––
-1.8
–––
–––
-5.0
––– ––– –––
––– 51 86
-1.6 77 130
A
V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -0.42A, VGS = 0V TJ = 25°C, IF = -0.42A di/dt = -100A/µs
D
S
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IRF6217PbF
-I D, Drain-to-Source Current (A)
TOP
BOTTOM
10
VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V
TOP
-I D, Drain-to-Source Current (A)
10
1
-5.0V
0.1
10
0.1
-5.0V
0.01
0.01 1
1
20µs PULSE WIDTH T J= 150 ° C
20µs PULSE WIDTH T J= 25 ° C 0.1
BOTTOM
VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V
0.1
100
1
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
I D = -0.70A
TJ = 150 ° C
1
0.1
V DS= -50V 20µs PULSE WIDTH 0.01 4
5
7
8
9
11
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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(Normalized)
RDS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current (A)
2.0
TJ = 25 ° C
1.5
1.0
0.5
V GS = -10V 0.0 -60
-40
-20
0
20
40
60
TJ , Junction Temperature
80
100
120
140
160
( ° C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF6217PbF 10000
ID = -0.42A
10
-V GS , Gate-to-Source Voltage (V)
Ciss
100
Coss 10
Crss
1
8
6
4
2
0
1
10
100
0
1000
4
6
8
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
10
100 -I D , Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
2
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
TJ = 150 ° C 1
TJ = 25 ° C
V GS= 0 V 0.2
0.6
0.9
1.3
-V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
OPERATION IN THIS AREA LIMITED BY R DS(on) 10
1
100µsec 1msec
0.1
10msec Tc = 25°C Tj = 150°C Single Pulse
0.01
0.1
4
VDS = -120V VDS = -75V VDS = -30V
Coss = Cds + Cgd
1000
C, Capacitance(pF)
12
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
1.6
1
10
100
1000
-V DS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF6217PbF 1.0
RD
VDS VGS
0.8
D.U.T.
RG
-
-I D , Drain Current (A)
+
V DD
0.6
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
0.4
Fig 10a. Switching Time Test Circuit 0.2
VDS 90% 0.0 25
50
75
100
TC , Case Temperature
125
150
( ° C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
P DM
1
t1 t2 Notes: 1. Duty factor D = 2. Peak T
0.1 0.0001
0.001
0.01
0.1
t1/ t 2
J = P DM x Z thJA
+T A
1
10
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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1.94
R DS(on) , Drain-to -Source On Resistance ( Ω)
RDS (on) , Drain-to-Source On Resistance ( Ω)
IRF6217PbF
1.92
1.90
1.88
VGS = -10V 1.86
1.84
1.82
1.80 0.00
0.25
0.50
0.75
1.00
1.25
9.00 8.00 7.00 6.00 5.00 4.00
ID = -0.7A 3.00 2.00 1.00
1.50
4.5
6.0
7.5
9.0
10.5
12.0
13.5
15.0
-V GS, Gate -to -Source Voltage (V)
-I D , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator Same Type as D.U.T.
12V
QG
-VGS
50KΩ .2µF
QGS
.3µF
QGD
35
D.U.T.
+VDS
VG
TOP VGS
30
Charge
-3mA
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
L
VDS
I AS
D.U.T
RG
IAS -20V
tp
VDD A DRIVER
0.01Ω
EAS , Single Pulse Avalanche Energy (mJ)
BOTTOM IG
25
20
15
10
5
0 25
V(BR)DSS
75
100
125
150
( ° C)
15V
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
6
50
Starting Tj, Junction Temperature
tp
ID -0.6A -1.1A -1.4A
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
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IRF6217PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5
A
8
7
6
5
6
H 0.25 [.010] 1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1 C
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y 0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMETERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL RECT IFIER LOGO
XXXX F7101
DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
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IRF6217PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 15mH
Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
RG = 25Ω, IAS = -1.4A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04
8
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