Transcript
PD - 96121
IRF6726MPbF IRF6726MTRPbF
DirectFET Power MOSFET
l l l l l l l l l l
RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested
Typical values (unless otherwise specified)
VDSS
VGS
30V max ±20V max
Qg
RDS(on)
1.3mΩ@10V
1.9mΩ@ 4.5V
Qgd
Qgs2
Qrr
Qoss
Vgs(th)
16nC
5.4nC
45nC
28nC
1.7V
tot
51nC
RDS(on)
DirectFET ISOMETRIC
MT
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ
SX
ST
MQ
MX
MT
MP
Description The IRF6726MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6726MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6726MPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR
g
Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current
g
h
Typical RDS(on) (mΩ)
4 ID = 32A 3 2 T J = 125°C 1 T J = 25°C 0 0
5
10
15
20
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
e e f
VGS, Gate-to-Source Voltage (V)
VDS
Max.
Units
30 ±20 32 25 180 250 260 25
V
A
mJ A
5.0 ID= 25A
4.0
VDS= 24V VDS= 15V
3.0 2.0 1.0 0.0 0
10
20
30
40
50
60
QG, Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.82mH, RG = 25Ω, IAS = 25A.
1 08/14/07
IRF6726MPbF Static @ TJ = 25°C (unless otherwise specified) Parameter
Min.
VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 32A VGS = 4.5V, ID = 25A
Drain-to-Source Breakdown Voltage
30
–––
–––
∆ΒVDSS/∆TJ RDS(on)
Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
––– –––
21 1.3
––– 1.7
VGS(th)
Gate Threshold Voltage
––– 1.35
1.9 1.7
2.4 2.35
∆VGS(th)/∆TJ IDSS
Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
––– –––
-6.0 –––
––– 1.0
IGSS
Gate-to-Source Forward Leakage
––– –––
––– –––
150 100
Gate-to-Source Reverse Leakage Forward Transconductance
––– 150
––– –––
-100 –––
Total Gate Charge Pre-Vth Gate-to-Source Charge
––– –––
51 12
77 –––
Post-Vth Gate-to-Source Charge Gate-to-Drain Charge
––– –––
5.4 16
––– –––
Gate Charge Overdrive Switch Charge (Qgs2 + Qgd)
––– –––
18 21
––– –––
Output Charge Gate Resistance
––– –––
28 1.0
––– 1.8
Turn-On Delay Time Rise Time
––– –––
20 30
––– –––
Turn-Off Delay Time Fall Time
––– –––
25 17
––– –––
Input Capacitance Output Capacitance
––– –––
6140 1270
––– –––
Reverse Transfer Capacitance
–––
590
–––
Min.
Typ. Max. Units
gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss
Conditions
Typ. Max. Units
BVDSS
V
V
i i
VDS = VGS, ID = 150µA
mV/°C µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA
VGS = 20V VGS = -20V
S
VDS = 15V, ID = 25A
nC
VDS = 15V VGS = 4.5V ID = 25A See Fig. 15
nC
VDS = 16V, VGS = 0V
Ω
i
VDD = 15V, VGS = 4.5V ns
ID = 25A RG = 1.8Ω See Fig. 17 VGS = 0V
pF
VDS = 15V ƒ = 1.0MHz
Diode Characteristics Parameter Continuous Source Current
–––
–––
110
ISM
(Body Diode) Pulsed Source Current
–––
–––
250
(Body Diode) Diode Forward Voltage
–––
0.77
1.0
V
Reverse Recovery Time Reverse Recovery Charge
––– –––
27 45
41 68
ns nC
VSD trr Qrr
g
Conditions MOSFET symbol
IS
A
showing the integral reverse p-n junction diode. TJ = 25°C, IS = 25A, VGS = 0V TJ = 25°C, IF = 25A di/dt = 500A/µs
i
i
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRF6726MPbF Absolute Maximum Ratings
e e f
PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG
Max.
Units
2.8 1.8 89 270 -40 to + 150
W
Parameter
Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
°C
Thermal Resistance Parameter
el jl kl fl
RθJA RθJA RθJA RθJC RθJ-PCB
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
e
Typ.
Max.
Units
––– 12.5 20 ––– 1.0
45 ––– ––– 1.4 –––
°C/W
0.022
W/°C
Thermal Response ( Z thJA )
100
10
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
τJ
0.1
R1 R1 τJ τ1
R2 R2
R3 R3
R4 R4
Ri (°C/W) τA
τ1
τ2
τ2
τ3
τ3
τ4
τA
τ4
Ci= τi/Ri Ci= τi/Ri
0.01
0.001 1E-006
0.0001
τi (sec) 0.000194
5.4838
0.045124
21.2371
1.1955
17.1160
45.9
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE ( THERMAL RESPONSE )
1E-005
1.1632
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes:
Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized
Rθ is measured at TJ of approximately 90°C.
back and with small clip heatsink.
Surface mounted on 1 in. square Cu (still air).
www.irf.com
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
3
IRF6726MPbF 1000
1000
100 BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
100
10
2.5V
1
BOTTOM
2.5V 10
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 25°C
0.1 0.1
1
Tj = 150°C
1
10
100
0.1
10
100
Fig 5. Typical Output Characteristics 2.0
1000
ID = 32A
VDS = 15V ≤60µs PULSE WIDTH
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100 T J = 150°C T J = 25°C T J = -40°C
10
1
V GS = 10V V GS = 4.5V 1.5
1.0
0.5
0.1 1.0
1.5
2.0
2.5
3.0
3.5
4.0
5
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
Typical RDS(on) ( mΩ)
Ciss
Coss 1000
Crss
T J = 25°C
Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 8.0V Vgs = 10V
4
C oss = C ds + C gd
10000
20 40 60 80 100 120 140 160
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics 100000
-60 -40 -20 0
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
3
2
1
100
0 1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
0
50
100
150
200
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage
www.irf.com
IRF6726MPbF 1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100µsec
100
T J = 150°C
100
OPERATION IN THIS AREA LIMITED BY R DS(on)
T J = 25°C
T J = -40°C 10
1
1msec
10
10msec
1
0.1
VGS = 0V
DC
T A = 25°C T J = 150°C
Single Pulse 0.01
0
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Fig 10. Typical Source-Drain Diode Forward Voltage
ID, Drain Current (A)
160 140 120 100 80 60 40 20 100
100.00
2.5
2.0
1.5
1.0
125
ID = 100µA ID = 150µA ID = 250µA ID = 1.0mA ID = 1.0A
0.5
0 75
10.00
3.0
Typical VGS(th) Gate threshold Voltage (V)
180
50
1.00
Fig11. Maximum Safe Operating Area
200
25
0.10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs. Junction Temperature
EAS , Single Pulse Avalanche Energy (mJ)
1200 ID 2.7A 3.9A BOTTOM 25A TOP
1000 800 600 400 200 0 25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
IRF6726MPbF
Id Vds Vgs
L VCC
DUT
0
20K 1K
Vgs(th)
S
Qgodr
Fig 15a. Gate Charge Test Circuit
Qgd
Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
V(BR)DSS 15V
DRIVER
L
VDS
tp
D.U.T
V RGSG
20V
+ - VDD
IAS
A
I AS
0.01Ω
tp
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
VDS VGS RG
RD
VDS 90%
D.U.T. +
- V DD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
10% VGS td(on)
Fig 17a. Switching Time Test Circuit
6
tr
t d(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com
IRF6726MPbF Driver Gate Drive
D.U.T
+
RG
*
• • • •
P.W. Period
***
D.U.T. ISD Waveform Reverse Recovery Current
+
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
D=
Period
VGS=10V
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
-
P.W.
+
V DD
**
+
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
ISD
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
DirectFET Board Footprint, MT Outline (Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D
S
D
G D
www.irf.com
S
D
7
IRF6726MPbF DirectFET Outline Dimension, MT Outline (Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS METRIC MAX CODE MIN 6.35 A 6.25 5.05 B 4.80 3.95 C 3.85 0.45 D 0.35 0.82 E 0.78 0.92 F 0.88 1.82 G 1.78 H 0.98 1.02 0.67 J 0.63 K 0.88 1.01 2.63 L 2.46 M 0.616 0.676 R 0.020 0.080 0.17 P 0.08
IMPERIAL MIN 0.246 0.189 0.152 0.014 0.031 0.035 0.070 0.039 0.025 0.035 0.097 0.0235 0.0008 0.003
MAX 0.250 0.199 0.156 0.018 0.032 0.036 0.072 0.040 0.026 0.039 0.104 0.0274 0.0031 0.007
DirectFET Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free"
8
www.irf.com
IRF6726MPbF DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6726MTRPBF). For 1000 parts on 7" reel, order IRF6726MTR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MIN MAX MIN MIN CODE MAX MAX MAX 12.992 6.9 A N.C N.C 177.77 N.C 330.0 N.C B 0.795 0.75 N.C 19.06 20.2 N.C N.C N.C 0.504 C 0.53 0.50 13.5 12.8 0.520 13.2 12.8 D 0.059 0.059 1.5 1.5 N.C N.C N.C N.C E 3.937 2.31 58.72 100.0 N.C N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.488 0.47 11.9 12.4 N.C 14.4 12.01 0.567 0.469 H 0.47 11.9 11.9 N.C 15.4 12.01 0.606
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 0.311 7.90 0.319 8.10 0.154 3.90 4.10 0.161 0.469 0.484 11.90 12.30 0.215 5.45 0.219 5.55 0.201 5.10 5.30 0.209 0.256 0.264 6.50 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2007
www.irf.com
9
