Transcript
PD - 95294
IRF7241PbF HEXFET® Power MOSFET ●
VDSS
RDS(on) max (mW)
ID
●
-40V
41@VGS = -10V 70@VGS = -4.5V
-6.2A -5.0A
Trench Technology Ultra Low On-Resistance ● P-Channel MOSFET ● Available in Tape & Reel ● Lead-Free
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
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Description
SO-8
Top View
Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG
Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
Units
-40 -6.2 -4.9 -25 2.5 1.6 20 ± 20 -55 to + 150
V A W mW/°C V °C
Thermal Resistance Symbol RθJL RθJA
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Parameter Junction-to-Drain Lead Junction-to-Ambient
Typ.
Max.
Units
––– –––
20 50
°C/W
1 10/6/04
IRF7241PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -40 ––– ––– ––– -1.0 8.9 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.03 25 45 ––– ––– ––– ––– ––– ––– 53 14 3.9 24 280 210 100 3220 160 190
Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 41 VGS = -10V, ID = -6.2A mΩ 70 VGS = -4.5V, ID = -5.0A -3.0 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -6.2A -10 VDS = -32V, VGS = 0V µA -25 VDS = -32V, VGS = 0V, TJ = 70°C -100 VGS = -20V nA 100 VGS = 20V 80 ID = -6.2A 21 nC VDS = -32V 5.9 VGS = -10V ––– VDD = -20V ––– ID = -1.0A ns ––– RG = 6.0Ω ––– VGS = -10V ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0kHz
Source-Drain Ratings and Characteristics IS ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
-2.5
-25
––– ––– –––
––– 32 45
-1.2 48 68
A V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V TJ = 25°C, IF = -2.5A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7241PbF 1000
100
VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
10
1
0.1
-2.70V 20µs PULSE WIDTH TJ = 25 °C
0.01 0.1
1
10
10
1
-I D, Drain-to-Source Current (Α)
T J = 150°C
1.00
T J = 25°C 0.10
VDS = -25V 20µs PULSE WIDTH 3.5
4.0
4.5
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
3.0
1
10
100
Fig 2. Typical Output Characteristics
100.00
2.5
20µs PULSE WIDTH TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.01
-2.70V
0.1 0.1
100
-VDS , Drain-to-Source Voltage (V)
10.00
VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V TOP
TOP
ID = -6.2A
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = -10V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF7241PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
C, Capacitance(pF)
4000
Coss = Cds + Cgd
Ciss 3000
2000
1000
Coss
-VGS , Gate-to-Source Voltage (V)
20
5000
ID = -6.2A VDS =-32V VDS =-20V
16
12
8
4
Crss
0 1
10
0
100
0
20
-V DS, Drain-to-Source Voltage (V)
100
-I D, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
100
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1 0.4
V GS = 0 V 0.6
0.8
1.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
60
80
100
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
4
40
QG , Total Gate Charge (nC)
1.2
OPERATION IN THIS AREA LIMITED BY R DS(on)
10
100µsec
1msec 1
0.1
10msec Tc = 25°C Tj = 150°C Single Pulse 0
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7241PbF 8.0
VDS
-ID , Drain Current (A)
VGS 6.0
RD
D.U.T.
RG
-
+
VDD
VGS
4.0
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
150
10%
TC , Case Temperature ( °C) 90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50 0.20
10
0.10 0.05 PDM
0.02
1
t1
0.01
t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.10
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance (Ω)
IRF7241PbF
0.08
0.06
ID = -6.2A
0.04
0.02 2
6
10
14
18
0.08
0.06 VGS = -4.5V
0.04 VGS = -10V 0.02 0
5
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
10
15
20
25
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50KΩ
QG QGS
.2µF .3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF7241PbF 100
80
2.5
ID = -250µA
Power (W)
-VGS(th) Gate threshold Voltage (V)
3.0
2.0
60
40
20
1.5 -75
-50
-25
0
25
50
75
100
T J , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs. Junction Temperature
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125
150
0 0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF7241PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D
DIM
B 5
A
8
6
7
6
H
E 1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
e
e1
8X b 0.25 [.010]
A
MAX
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
MILLIMET ERS
MAX
A
5
INCHES MIN
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45° C
y 0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL RECT IFIER LOGO
XXXX F 7101
DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER
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IRF7241PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04
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