Transcript
IRF7324TRPbF-1 HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -4.5V)
-20
V
0.018
Ω
42
nC
-9.0
A
Qg (typical) ID (@TA = 25°C)
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
SO-8 Top View
Features
Benefits
Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
Base Part Number
Package Type
IRF7324PbF-1
SO-8
⇒
Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Standard Pack Form Quantity Tape and Reel 4000
Orderable Part Number IRF7324TRPbF-1
Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG
Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
Units
-20 -9.0 -7.1 -71 2.0 1.3 16 ± 12 -55 to + 150
V A W W mW/°C V °C
Thermal Resistance Parameter RθJA
1
Max.
Maximum Junction-to-Ambient
www.irf.com © 2014 International Rectifier
Units 62.5
Submit Datasheet Feedback
°C/W
October 16, 2014
IRF7324TRPbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ΔV(BR)DSS/ΔTJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -20 ––– ––– -0.45 19 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– -0.02 ––– ––– ––– ––– ––– ––– ––– ––– 42 7.1 12 17 36 170 190 2940 630 420
Max. Units Conditions ––– V VGS = 0V, ID = -250μA ––– V/°C Reference to 25°C, ID = -1mA 0.018 VGS = -4.5V, ID = -9.0A Ω 0.026 VGS = -2.5V, ID = -7.7A -1.0 V VDS = VGS, ID = -250μA ––– S VDS = -10V, ID = -9.0A -1.0 VDS = -16V, VGS = 0V µA -25 VDS = -16V, VGS = 0V, TJ = 125°C -100 VGS = -12V nA 100 VGS = 12V 63 ID = -9.0A 11 nC VDS = -16V 18 VGS = -5.0V ––– VDD = -10V ––– ID = -1.0A ns ––– RG = 6.0Ω ––– RD = 10Ω ––– VGS = 0V ––– pF VDS = -15V ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics IS ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
-2.0
-71
––– ––– –––
––– 180 300
-1.2 270 450
A V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.0A, VGS = 0V TJ = 25°C, IF = -2.0A di/dt = -100A/μs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300μs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec.
2
www.irf.com © 2014International Rectifier
Submit Datasheet Feedback
October 16, 2014
D
S
IRF7324TRPbF-1
1000
1000
VGS -4.5V -3.5V -2.5V -2.0V -1.5V -1.3V -1.0V BOTTOM -0.75V
100
100
10
1
0.1
-0.75V
0.01 0.1
1
20μs PULSE WIDTH TJ = 25 ° C 10
10
1
-0.75V 0.1
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
-I D , Drain-to-Source Current (A)
TJ = 150 ° C
TJ = 25 ° C 1
V DS = -15V 20μs PULSE WIDTH 1.5
2.0
2.5
3.0
3.5
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics 3
10
100
Fig 2. Typical Output Characteristics
100
1.0
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1 0.5
20μs PULSE WIDTH TJ = 150 °C
0.01 0.1
-VDS , Drain-to-Source Voltage (V)
10
VGS -4.5V -3.5V -2.5V -2.0V -1.5V -1.3V -1.0V BOTTOM -0.75V TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
www.irf.com © 2014 International Rectifier
ID = -9.0A
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = -4.5V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback
October 16, 2014
IRF7324TRPbF-1
5000
-VGS , Gate-to-Source Voltage (V)
4000
C, Capacitance (pF)
10
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Ciss
3000
2000
1000
0
Coss Crss 1
10
VDS =-16V 8
6
4
2
0
100
ID = -9.0A
0
10
-VDS , Drain-to-Source Voltage (V)
30
40
50
60
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
100
10
TJ = 25 ° C 1
0.1 0.2
V GS = 0 V 0.4
0.6
0.8
1.0
1.2
1.4
1.6
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage 4
www.irf.com © 2014International Rectifier
10us
100us 10 1ms
TC = 25 ° C TJ = 150 ° C Single Pulse
1 0.1
10ms 1
10
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback
October 16, 2014
100
IRF7324TRPbF-1
10.0
RD
VDS VGS
-ID , Drain Current (A)
8.0
D.U.T.
RG
-
+
6.0
VDD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit 2.0 td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
10%
150
TC , Case Temperature ( °C) 90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50 0.20 10 0.10 0.05 PDM
0.02 1
0.01
t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
10
0.025
0.020
ID = -9.0A
0.015
0.010 2.0
2.5
3.0
3.5
4.0
4.5
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance (Ω)
IRF7324TRPbF-1
0.10
0.08
0.06
0.04 VGS = -2.5V 0.02
VGS = -4.5V
0.00 0
10
20
30
40
50
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50KΩ
QG
12V
.2μF
VGS QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
IG
Charge
Fig 14a. Basic Gate Charge Waveform 6
.3μF
www.irf.com © 2014International Rectifier
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit Submit Datasheet Feedback
October 16, 2014
60
IRF7324TRPbF-1 SO-8 Package Outline Dimensions are shown in milimeters (inches) D
DIM
B 5
A
6
8
7
6
5
1
2
3
4
H
E
0.25 [.010]
A
e
e1
A1
8X b 0.25 [.010]
A
MILLIMET ERS
MAX
MIN
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
MAX
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
INCHES MIN .0532
A
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45° C
y 0.10 [.004]
8X L
8X c
7
C A B
NOT ES :
FOOT PRINT
θ
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free) EXAMPLE: THIS IS AN IRF7101 (MOSFET)
INTERNATIONAL RECTIFIER LOGO
XXXX F7101
DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
IRF7324TRPbF-1 SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ †
Qualification information
Industrial
Qualification level
(per JE DEC JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines) MS L1 ††
(per JE DE C J-S TD-020D ) Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release
Revision History Date 10/16/2014
Comments • Corrected part number from" IRF7324PbF-1" to "IRF7324TRPbF-1" -all pages • Removed the "IRF7324PbF-1" bulk part number from ordering information on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8
www.irf.com © 2014International Rectifier
Submit Datasheet Feedback
October 16, 2014
