Transcript
IRF7380PbF HEXFET® Power MOSFET
VDSS
Applications l High frequency DC-DC converters l Lead-Free
RDS(on) max
73m:@VGS = 10V
80V
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
S1
G2
ID 3.6A
SO-8
Top View
Absolute Maximum Ratings Parameter
Max.
Units
80
V
VDS
Drain-to-Source Voltage
VGS ID @ TA = 25°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
± 20 3.6
ID @ TA = 100°C
Continuous Drain Current, VGS @ 10V
2.9
IDM
Pulsed Drain Current
29
PD @TA = 25°C
Maximum Power Dissipation
c
Linear Derating Factor
h
dv/dt TJ
Peak Diode Recovery dv/dt Operating Junction and
TSTG
Storage Temperature Range
A
2.0
W
0.02
W/°C
2.3 -55 to + 150
V/ns °C
Thermal Resistance Parameter RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient (PCB Mount)
f
Typ.
Max.
Units
–––
42
°C/W
–––
62.5
Notes through are on page 8 1
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September 16, 2013
IRF7380PbF Static @ TJ = 25°C (unless otherwise specified) Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
80
–––
–––
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.09
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
61
73
mΩ
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
IGSS
V
Conditions VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 2.2A
e
VDS = VGS, ID = 250µA VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C
nA
VGS = 20V VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified) Parameter
Min. Typ. Max. Units 4.3
–––
–––
S
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
–––
15
23
Qgs
Gate-to-Source Charge
–––
2.9
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
4.5
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
9.0
–––
VDD = 40V
tr
Rise Time
–––
10
–––
td(off)
Turn-Off Delay Time
–––
41
–––
tf
Fall Time
–––
17
–––
VGS = 10V
Ciss
Input Capacitance
–––
660
–––
VGS = 0V
Coss
Output Capacitance
–––
110
–––
Crss
Reverse Transfer Capacitance
–––
15
–––
Coss
Output Capacitance
–––
710
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
72
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
140
–––
VGS = 0V, VDS = 0V to 64V
EAS
Parameter Single Pulse Avalanche Energy
IAR
Avalanche Current
IS
Continuous Source Current
–––
–––
3.6
A
MOSFET symbol
ISM
(Body Diode) Pulsed Source Current
–––
–––
29
A
showing the integral reverse
VSD
(Body Diode) Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode. TJ = 25°C, IS = 2.2A, VGS = 0V
trr
Reverse Recovery Time
–––
50
–––
ns
Qrr
Reverse Recovery Charge
–––
110
–––
nC
ID = 2.2A nC
Diode Characteristics
c
Parameter
c
2
e
RG = 24Ω
e
VDS = 25V pF
ƒ = 1.0MHz
g
Typ.
Max.
Units
–––
75
mJ
–––
2.2
A
Min. Typ. Max. Units
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VDS = 40V
ID = 2.2A ns
Avalanche Characteristics
cd
VDS = 25V, ID = 2.2A
Conditions D
G S
e
TJ = 25°C, IF = 2.2A, VDD = 40V di/dt = 100A/µs
e
Spetember 16, 2013
IRF7380PbF 100
100
10
BOTTOM
1
3.7V
0.1
0.01
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V
10
BOTTOM
3.7V
1
20µs PULSE WIDTH Tj = 150°C
20µs PULSE WIDTH Tj = 25°C 0.1
0.001 0.1
1
10
100
0.1
1000
1
Fig 1. Typical Output Characteristics
RDS(on), Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (Α)
2.5
10
T J = 150°C
T J = 25°C
VDS = 15V 20µs PULSE WIDTH 0 3.0
4.0
5.0
6.0
100
1000
Fig 2. Typical Output Characteristics
100
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
7.0
I D = 3.6A
2.0
1.5
1.0
0.5
V GS = 10V
0.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics 3
VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V
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-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ, Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature September 16, 2013
IRF7380PbF 100000
VGS , Gate-to-Source Voltage (V)
10000
Coss = Cds + Cgd
1000
Ciss C oss
100
Crss
10
ID= 2.1A
VDS= 16V 8 6 4 2 0
1
10
100
0
2
VDS, Drain-to-Source Voltage (V)
4
6
8
10
12
14
16
Q G Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
ID, Drain-to-Source Current (A)
100
10
T J= 25 ° C TJ = 150 ° C 1
V GS = 0 V
0.1 0.0
0.5
1.0
1.5
OPERATION IN THIS AREA LIMITED BY R DS(on)
10 100µsec 1
1msec Tc = 25°C Tj = 150°C Single Pulse
0.1 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage 4
VDS= 64V VDS= 40V
10
1
ISD, Reverse Drain Current (A)
C, Capacitance(pF)
12
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
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1
10msec
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area Spetember 16, 2013
IRF7380PbF 4.0
RD
VDS VGS
ID , Drain Current (A)
3.0
D.U.T.
RG
+
-V DD
10V
2.0
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
VDS 90% 0.0 25
50
75
100
125
150
TA , Ambient Temperature (°C) 10% VGS
Fig 9. Maximum Drain Current Vs. Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20 10
Thermal Response
0.10 0.05
P DM
0.02 1
0.01
t1 t2 SINGLE PULSE (THERMAL RESPONSE)
Notes: 1. Duty factor D = 2. Peak T
0.1 0.00001
0.0001
0.001
0.01
0.1
t1/ t 2
J = P DM x Z thJA
1
+T A 10
100
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
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September 16, 2013
RDS(on) , Drain-to -Source On Resistance (m Ω)
IRF7380PbF RDS (on) , Drain-to-Source On Resistance (mΩ)
95 90 85 80
VGS = 10V
75 70 65 60 55 50 0
5
10
15
20
25
30
800 700 600 500 400 300
ID = 3.6A
200 100 0 3.0
ID , Drain Current (A)
5.0
7.0
9.0
11.0
13.0
15.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+ V - DS
QGD
200
VG
EAS, Single Pulse Avalanche Energy (mJ)
50KΩ 12V
VGS 3mA
Charge IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
15V
V(BR)DSS tp
L
VDS
D.U.T
RG
IAS 20V
I AS
tp
DRIVER
+ V - DD
A
TOP 160
120
80
40
0
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6
BOTTOM
ID 1.0A 1.8A 2.2A
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25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy Vs. Drain Current Spetember 16, 2013
IRF7380PbF
SO-8 Package Outline(Mosfet
& Fetky)
Dimensions are shown in milimeters (inches) '
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SO-8 Part Marking Information (;$03/( 7+,6,6$1,5) 026)(7
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'$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
www.irf.com © 2013 International Rectifier
September 16, 2013
IRF7380PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes:
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 31mH RG = 25Ω, IAS = 2.2A. Pulse width ≤ 400µs; duty cycle ≤ 2%.
Revision History Date 09/16/2013
When mounted on 1 inch square copper board.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 2.2A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.
Comments •Updated the Rthja from 50°C/W to 62.5°C/W, on page 1. •Converted the data sheet to IR Corproate Template.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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www.irf.com © 2013 International Rectifier
Spetember 16, 2013
