Transcript
IRF7425PbF-1 HEXFET® Power MOSFET VDS
-20
RDS(on) max
V
1
8
S
2
7
D
S
3
6
D
G
4
5
D
8.2
(@VGS = -4.5V)
mΩ
RDS(on) max
13
(@VGS = -2.5V)
Qg (typical) ID (@TA = 25°C)
87
nC
-15
A
Package Type
IRF7425PbF-1
SO-8
SO-8
Top View
Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
Base Part Number
A D
S
⇒
Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000
Orderable Part Number IRF7425PbF-1 IRF7425TRPbF-1
Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG
Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
Units
-20 -15 -12 -60 2.5 1.6 20 ± 12 -55 to + 150
V
mW/°C V °C
Max.
Units
50
°C/W
A W
Thermal Resistance Parameter RθJA
Maximum Junction-to-Ambient
1
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IRF7425PbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ΔV(BR)DSS/ΔTJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -20 ––– ––– ––– -0.45 44 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Typ. ––– 0.010 ––– ––– ––– ––– ––– ––– ––– ––– 87 18 21 13 20 230 160 7980 1480 980
Max. Units Conditions ––– V VGS = 0V, ID = -250μA ––– V/°C Reference to 25°C, ID = -1mA 8.2 VGS = -4.5V, ID = -15A mΩ 13 VGS = -2.5V, ID = -13A -1.2 V VDS = VGS, ID = -250μA ––– S VDS = -10V, ID = -15A -1.0 VDS = -16V, VGS = 0V µA -25 VDS = -16V, VGS = 0V, TJ = 70°C -100 VGS = -12V nA 100 VGS = 12V 130 ID = -15A 27 nC VDS = -10V 32 VGS = -4.5V ––– VDD = -10V ––– ID = -1.0A ns ––– RG = 6.0Ω ––– VGS = -4.5V ––– VGS = 0V ––– pF VDS = -15V ––– ƒ = 1.0kHz
Source-Drain Ratings and Characteristics IS ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
-2.5
-60
––– ––– –––
––– 120 160
-1.2 180 240
A V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V TJ = 25°C, IF = -2.5A di/dt = -100A/μs
D
S
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Surface mounted on 1 in square Cu board, t ≤ 10sec.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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IRF7425PbF-1
1000
1000
VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
100
10
1
-1.0V
0.1
20μs PULSE WIDTH TJ = 25 °C
0.01 0.1
1
10
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
-I D , Drain-to-Source Current (A)
TJ = 150 ° C 10
TJ = 25 ° C
V DS = -15V 20μs PULSE WIDTH 1.6
1.8
2.0
2.2
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics 3
10
100
Fig 2. Typical Output Characteristics
2.0
1.4
1
-VDS , Drain-to-Source Voltage (V)
100
1.2
20μs PULSE WIDTH TJ = 150 °C
0.1 0.1
100
Fig 1. Typical Output Characteristics
0.1 1.0
-1.0V
1
-VDS , Drain-to-Source Voltage (V)
1
VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP
TOP
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ID = -15A
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = -4.5V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback
November 20, 2013
IRF7425PbF-1
12000
-VGS , Gate-to-Source Voltage (V)
10000
C, Capacitance (pF)
8
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Ciss
8000
6000
4000
Coss Crss
2000
0
1
10
4
2
0
40
80
120
160
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
VDS =-16V VDS =-10V
6
0
100
ID = -15A
10
100
TJ = 150 ° C
1
TJ = 25 ° C
0.1 0.2
V GS = 0 V 0.4
0.6
0.8
1.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage 4
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100us
1ms
10
10ms
TA = 25 °C TJ = 150 ° C Single Pulse
1 0.1
1
10
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback
November 20, 2013
100
IRF7425PbF-1
15
RD
VDS VGS
12
D.U.T.
-ID , Drain Current (A)
RG
-
+
9
VDD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit 3 td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
10%
150
TC , Case Temperature ( °C) 90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100 D = 0.50 0.20
10
0.10 0.05 0.02
1
0.01 P DM t1
SINGLE PULSE (THERMAL RESPONSE)
0.1
0.01 0.00001
t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5
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0.015
RDS (on) , Drain-to-Source On Resistance ( Ω)
RDS(on) , Drain-to -Source On Resistance (Ω)
IRF7425PbF-1
0.010
ID = -15A
0.005 1.0
2.0
3.0
4.0
5.0
0.010
0.009
VGS = -2.5V
0.008
0.007
0.006 VGS = -4.5V 0.005 0
10
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
20
30
40
50
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50KΩ
QG QGS
12V
.2μF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
IG
Charge
Fig 14a. Basic Gate Charge Waveform 6
.3μF
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ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit Submit Datasheet Feedback
November 20, 2013
60
IRF7425PbF-1
3.0
120
2.5
80
Power (W)
-VGS(th) , Variace ( V )
100
ID = -250μA 2.0
60
40
20
1.5
0
-75
-50
-25
0
25
50
75
100
125
150
0.001
0.010
T J , Temperature ( °C )
Fig 15. Typical Vgs(th) Variance Vs. Juction Temperature
7
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0.100
1.000
10.000
100.000
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF7425PbF-1 SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5
A
8
6
7
6
5 H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b 0.25 [.010]
MAX 0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
e1
6X
MILLIMETERS
MIN
A
E
INCHES
DIM
B
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y 0.10 [.004]
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL RECT IFIER LOGO
XXXX F7101
DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8
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IRF7425PbF-1 SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ †
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines) MS L1 ††
(per JEDE C J-S T D-020D ) Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9
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November 20, 2013
