Irf7726pbf Hexfet Power Mosfet V

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PD -95992 IRF7726PbF l l l l l l HEXFET® Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -30V 0.026@VGS = -10V 0.040@VGS = -4.5V -7.0A -6.0A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. S S S G The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. 1 8 2 7 3 6 4 5 A D D D D MICRO-8 Top View Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -30 -7.0 -5.7 -28 1.79 1.14 0.01 ±20 -55 to +150 V A W W W/°C V °C Thermal Resistance Parameter RθJA www.irf.com Maximum Junction-to-Ambientƒ Max. Units 70 °C/W 1 02/22/05 IRF7726PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 ––– ––– ––– -1.0 10 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.016 ––– ––– ––– ––– ––– ––– ––– ––– 46 8.0 8.1 15 25 227 107 2204 341 220 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.026 VGS = -10V, ID = -7.0A ‚ Ω 0.040 VGS = -4.5V, ID = -6.0A ‚ -2.5 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -7.0A -15 VDS = -24V, VGS = 0V µA -25 VDS = -24V, VGS = 0V, TJ = 70°C -100 VGS = -20V nA 100 VGS = 20V 69 ID = -7.0A ––– nC VDS = -15V ––– VGS = -10V 23 VDD = -15V, VGS = -10V 38 ID = -1.0A ns 341 RG = 6.0Ω 161 RD = 15Ω ‚ ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– -1.8 ––– ––– -28 ––– ––– ––– ––– 35 32 -1.2 53 48 A V ns µC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.8A, VGS = 0V ‚ TJ = 25°C, I F = -1.8A di/dt = -100A/µs ‚ D S Notes:  Repetitive rating; pulse width limited by ƒ When mounted on 1 inch square copper board, t < 10 sec. max. junction temperature. ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF7726PbF 100 VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V 100 VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V 10 1 -2.5V 0.1 TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP 10 -2.5V 1 20µs PULSE WIDTH Tj = 150°C 20µs PULSE WIDTH Tj = 25°C 0.01 0.1 0.1 1 10 100 0.1 -VDS, Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 150° C TJ = 25 ° C V DS= -15V 20µs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 100 1 10 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 1 6.0 2.0 ID = -7.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7726PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 2800 2400 Ciss 2000 1600 1200 800 Coss Crss 400 16 -VGS , Gate-to-Source Voltage (V) 3200 10 V DS=-24V V DS=-15V 14 12 10 8 6 4 2 0 1 ID = -7.0A 0 100 0 10 -VDS , Drain-to-Source Voltage (V) 50 60 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25 ° C TJ = 150 ° C -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 40 100 100 10 1 1.5 3.0 4.5 Fig 7. Typical Source-Drain Diode Forward Voltage 100us 10 1ms TC = 25 °C TJ = 150 °C Single Pulse V GS = 0 V -VSD ,Source-to-Drain Voltage (V) 4 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.1 0.0 20 QG , Total Gate Charge (nC) 6.0 1 0.1 10ms 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7726PbF 8.0 VDS -ID , Drain Current (A) VGS 6.0 RD D.U.T. RG + V DD VGS 4.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 0.0 10% 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.070 RDS ( on ) , Drain-to-Source On Resistance Ω ( ) ( RDS(on), Drain-to -Source On ResistanceΩ) IRF7726PbF 0.060 0.050 0.040 ID = -7.0A 0.030 0.020 0.010 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.120 0.080 VGS = -4.5V 0.040 VGS = -10V 0.000 0 10 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 20 30 40 50 60 -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V D.U.T. QGS +VDS QGD VGS -3mA VG IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform 6 Fig 14b. Gate Charge Test Circuit www.irf.com IRF7726PbF 2.4 150 120 ID = -250µA 1.8 Power (W) -VGS(th) ( V ) 2.1 90 60 1.5 30 1.2 0 -75 -50 -25 0 25 50 75 100 TJ , Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 125 150 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 16. Typical Power Vs. Time 7 IRF7726PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - - + • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17 For P Channel HEXFETS 8 www.irf.com IRF7726PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS INCHES DIM D 3 -B- D D D D D1 D1 D2 D2 8 7 6 5 8 7 6 5 SINGLE DUAL 8 7 6 5 3 H E 0.25 (.010) -A- M A M 1 2 3 4 1 2 3 4 S S S G S1 G1 S2 G2 1 2 3 4 e 6X MILLIMETERS MIN MAX MIN A .036 .044 0.91 MAX 1.11 A1 .004 .008 0.10 0.20 B .010 .014 0.25 0.36 C .005 .007 0.13 0.18 D .116 .120 2.95 3.05 e .0256 BASIC 0.65 BASIC e1 .0128 BASIC 0.33 BASIC E .116 .120 2.95 3.05 H .188 .198 4.78 5.03 L .016 .026 0.41 0.66 θ 0° 6° 0° 6° e1 RECOMMENDED FOOTPRINT θ 1.04 ( .041 ) 8X A -CB 0.10 (.004) A1 8X 0.08 (.003) M C A S L 8X 0.38 8X ( .015 ) C 8X B S 4.24 5.28 ( .167 ) ( .208 ) 3.20 ( .126 ) NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 0.65 6X ( .0256 ) 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. Micro8 Part Marking Information EXAMPLE: THIS IS AN IRF7501 LOT CODE (XX) DAT E CODE (YW) - S ee table below Y = YEAR W = WEEK P = DES IGNATES LEAD - FREE PRODUCT (OPT IONAL) PART NUMBER WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR www.irf.com YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 1 2 3 4 5 6 7 8 9 0 WORK WEEK WW = (27-52) IF PRECEDED BY A LET TE R W YEAR Y 01 02 03 04 A B C D 24 25 26 X Y Z 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z 9 IRF7726PbF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/05 10 www.irf.com