Transcript
IRF7904PbF-1 HEXFET® Power MOSFET VDS
30
RDS(on) max Q1
V
16.2
(@VGS = 10V)
mΩ
RDS(on) max Q2
10.8
(@VGS = 10V) Qg (typical) Q1
7.5
Qg (typical) Q2
14
ID(@TA = 25°C)Q1
7.6
ID(@TA = 25°C)Q2
11
nC
G1 1
8
D1
S2
2
7
S1 / D2
S2
3
6
S1 / D2
G2 4
5
S1 / D2
SO-8
A
Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box
Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
Base Part Number
Package Type
IRF7904PbF-1
SO-8
Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
⇒
Standard Pack Form Tube/Bulk Tape and Reel
Orderable Part Number
Quantity 95 4000
IRF7904PbF-1 IRF7904TRPbF-1
Absolute Maximum Ratings Parameter
Q1 Max.
Q2 Max.
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
7.6
11
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
6.1
8.9
IDM
Pulsed Drain Current
61
89
PD @TA = 25°C
Power Dissipation
1.4
2.0
PD @TA = 70°C
Power Dissipation
0.9
1.3
0.011
0.016
TJ
Linear Derating Factor Operating Junction and
W/°C °C
TSTG
Storage Temperature Range
Q1 Max.
Q2 Max.
Units
20
20
°C/W
90
62.5
c
V
30 ± 20
-55 to + 150
A W
Thermal Resistance RθJL RθJA
1
Parameter Junction-to-Drain Lead
g Junction-to-Ambient fg
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IRF7904PbF-1 Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
Q1&Q2 Q1 Q2 Q1 Q2
VGS(th) ΔVGS(th)/ΔTJ
Gate Threshold Voltage Gate Threshold Voltage Coefficient
IDSS
Drain-to-Source Leakage Current
IGSS gfs
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance
Qg
Total Gate Charge
Qgs1
Pre-Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Q1&Q2 Q1 Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
Min. 30 ––– ––– ––– ––– ––– ––– 1.35 ––– ––– ––– ––– ––– ––– 17 23 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.024 0.024 11.4 14.5 8.6 10 ––– -5.0 -5.0 ––– ––– ––– ––– ––– ––– 7.5 14 2.2 3.7 0.6 1.1 2.5 4.8 2.2 4.4 3.1 5.9 4.5 9.1 3.2 2.9 6.9 7.8 7.3 10 10 15 3.2 4.6 910 1780 190 390 94 180
Max. ––– ––– ––– 16.2 20.5 10.8 13 2.25 ––– ––– 1.0 150 100 -100 ––– ––– 11 21 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 4.8 4.4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Conditions Units VGS = 0V, ID = 250μA V V/°C Reference to 25°C, ID = 1mA
e e e e
VGS = 10V, ID = 7.6A VGS = 4.5V, ID = 6.1A VGS = 10V, ID = 11A VGS = 4.5V, ID = 8.8A Q1: VDS = VGS, ID = 25μA V mV/°C Q2: VDS = VGS, ID = 50μA mΩ
μA nA S
nC
VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 6.1A VDS = 15V, ID = 8.8A
Q1 VDS = 15V VGS = 4.5V, ID = 6.1A Q2 VDS = 15V VGS = 4.5V, ID = 8.8A
nC
VDS = 16V, VGS = 0V
Ω Q1 VDD = 15V, VGS = 4.5V ID = 6.1A ns Q2 VDD = 15V, VGS = 4.5V ID = 8.8A Clamped Inductive Load
pF
VGS = 0V VDS = 15V ƒ = 1.0MHz
Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current
EAS IAR
c
Q1 Max. 140 6.1
Typ. ––– –––
d
Q2 Max. 250 8.8
Units mJ A
Diode Characteristics
VSD
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS ISM
c
2
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Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– ––– ––– ––– ––– ––– 11 16 2.6 6.9
Max. 1.8 2.5 61 88 1.0 1.0 17 24 3.9 10
Units Conditions A MOSFET symbol showing the integral reverse A p-n junction diode. TJ = 25°C, IS = 6.1A, VGS = 0V V TJ = 25°C, IS = 8.8A, VGS = 0V Q1 TJ = 25°C, IF = 6.1A, ns VDD = 15V, di/dt = 100A/μs nC Q2 TJ = 25°C, IF = 8.8A, VDD = 15V, di/dt = 100A/μs
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IRF7904PbF-1 Typical Characteristics Q1 - Control FET
Q2 - Synchronous FET
100
100
10 BOTTOM
VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
2.5V
10
TOP
2.5V
1
≤ 60μs PULSE WIDTH Tj = 25°C
≤ 60μs PULSE WIDTH Tj = 25°C
0.1
0.1 0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
100
100
BOTTOM
VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V
ID, Drain-to-Source Current (A)
TOP
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
100
10
2.5V ≤ 60μs PULSE WIDTH Tj = 150°C
TOP
10
2.5V BOTTOM
VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V
≤ 60μs PULSE WIDTH Tj = 150°C
1
1 0.1
1
10
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
100.0
100.0
10.0
ID, Drain-to-Source Current(Α)
ID, Drain-to-Source Current(Α)
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 150°C
TJ = 25°C
1.0
VDS = 15V ≤ 60μs PULSE WIDTH 0.1
10.0
TJ = 150°C
TJ = 25°C
1.0
VDS = 15V ≤ 60μs PULSE WIDTH 0.1
1.0
3
BOTTOM
VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V
2.0
3.0
4.0
5.0
1.0
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Transfer Characteristics
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IRF7904PbF-1 Typical Characteristics Q1 - Control FET 10000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
1000
C, Capacitance (pF)
C, Capacitance (pF)
10000
Q2 - Synchronous FET
Ciss
Coss Crss
100
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Ciss 1000
Coss
Crss 10
100 1
10
100
1
10
VDS, Drain-to-Source Voltage (V)
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage 12
ID= 6.1A
VDS = 24V VDS= 15V
10
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
12
8 6 4 2 0
ID= 8.8A
VDS= 15V
10 8 6 4 2 0
0
5
10
15
20
0
5
QG Total Gate Charge (nC)
100 100μsec
10 10msec 1
100msec TA = 25°C Tj = 150°C Single Pulse
0.01 0.01
0.10
1.00
10.00
100.00
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area www.irf.com © 2014 International Rectifier
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on)
1msec
15
20
25
30
35
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage 1000
1000
4
10
QG Total Gate Charge (nC)
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
0.1
VDS= 24V
OPERATION IN THIS AREA LIMITED BY R DS(on)
100 1msec
100μsec
10 10msec 1 100msec 0.1
TA = 25°C Tj = 150°C Single Pulse
0.01 0.01
0.10
1.00
10.00
100.00
VDS , Drain-toSource Voltage (V)
Fig 12. Maximum Safe Operating Area Submit Datasheet Feedback
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IRF7904PbF-1 Typical Characteristics Q1 - Control FET
Q2 - Synchronous FET 1.5
ID = 7.6A VGS = 10V
RDS(on) , Drain-to-Source On Resistance (Normalized)
RDS(on) , Drain-to-Source On Resistance (Normalized)
1.5
1.0
0.5
ID = 11A
VGS = 10V
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
-60 -40 -20
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100.0
100.0
ISD, Reverse Drain Current (A)
ISD, Reverse Drain Current (A)
0
TJ = 150°C
10.0
1.0
TJ = 25°C
TJ = 150°C 10.0
TJ = 25°C
1.0
VGS = 0V
VGS = 0V
0.1
0.1 0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
VSD, Source-to-Drain Voltage (V)
40
ID = 7.6A 35
30
25
TJ = 125°C
20
15
TJ = 25°C
10 2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage 5
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0.8
1.2
1.6
2.0
2.4
2.8
3.2
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage ( Ω) RDS (on), Drain-to -Source On Resistance m
( Ω) RDS (on), Drain-to -Source On Resistance m
Fig 15. Typical Source-Drain Diode Forward Voltage
0.4
25
ID = 11A 20
TJ = 125°C
15
10
TJ = 25°C 5 2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance vs.Gate Voltage Submit Datasheet Feedback
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IRF7904PbF-1 Typical Characteristics Q1 - Control FET
Q2 - Synchronous FET
8
12
ID , Drain Current (A)
ID , Drain Current (A)
10
6
4
2
8
6
4
2
0
0
25
50
75
100
125
150
25
50
TJ , Ambient Temperature (°C)
150
2.2
VGS(th) Gate threshold Voltage (V)
VGS(th) Gate threshold Voltage (V)
125
Fig 20. Maximum Drain Current vs. Ambient Temp.
2.6
2.2
1.8
ID = 250μA
1.4
1.8
ID = 250μA
1.4
1.0
1.0 -75
-50
-25
0
25
50
75
100
125
-75
150
-50
-25
Fig 21. Threshold Voltage vs. Temperature
25
50
75
100
125
150
Fig 22. Threshold Voltage vs. Temperature EAS, Single Pulse Avalanche Energy (mJ)
600
I D TOP 0.34A 0.48A BOTTOM 6.1A
500
0
TJ , Temperature ( °C )
TJ , Temperature ( °C )
EAS, Single Pulse Avalanche Energy (mJ)
100
TJ , Ambient Temperature (°C)
Fig 19. Maximum Drain Current vs. Ambient Temp.
400
300
200
100
0
1200
I D 0.57A 0.77A BOTTOM 8.8A TOP
1000
800
600
400
200
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 23. Maximum Avalanche Energy vs. Drain Current 6
75
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25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 24. Maximum Avalanche Energy vs. Drain Current Submit Datasheet Feedback
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IRF7904PbF-1
Thermal Response ( ZthJA )
100
10
D = 0.50 0.20 0.10
1
0.05 0.02 0.01 τJ
0.1
R1 R1 τJ τ1
R2 R2 τ2
τ1
τ2
R3 R3 τ3
τC τ τ3
Ri (°C/W) τi (sec) 17.122 0.018925 53.325 0.74555 19.551
Ci= τi/Ri Ci i/Ri
0.01
39.2
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1) 100
Thermal Response ( ZthJA )
D = 0.50 10
0.20 0.10
1
0.05 0.02 0.01 τJ
0.1
R1 R1 τJ τ1
τ1
R2 R2 τ2
τ2
Ci= τi/Ri Ci i/Ri
0.01
R3 R3 τ3
τC τ τ3
Ri (°C/W) τi (sec) 10.908 0.02108 34.35
1.1482
17.15
39.7
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)
Fig 27. Layout Diagram 7
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IRF7904PbF-1 Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform Reverse Recovery Current
+
RG
• • • •
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
P.W. Period VGS=10V
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+
D=
Period
P.W.
+
+ -
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
Body Diode
VDD
Forward Drop
Inductor Current Inductor Curent ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices Fig 28. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V
DRIVER
L
VDS
tp
D.U.T
RG
+ V - DD
IAS
VGS 20V
A
0.01Ω
tp
I AS
Fig 29a. Unclamped Inductive Test Circuit LD
Fig 29b. Unclamped Inductive Waveforms
VDS
VDS
+
90%
VDD D.U.T VGS
10%
VGS
Pulse Width < 1μs Duty Factor < 0.1%
td(on)
Fig 30a. Switching Time Test Circuit Current Regulator Same Type as D.U.T.
tr
td(off)
Fig 30b. Switching Time Waveforms Id Vds Vgs
50KΩ 12V
tf
.2μF .3μF
D.U.T.
+VDS
Vgs(th)
VGS -3mA
IG
ID
Current Sampling Resistors
Fig 31a. Gate Charge Test Circuit 8
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Qgs1 Qgs2
Qgd
Qgodr
Fig 31b. Gate Charge Waveform Submit Datasheet Feedback
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IRF7904PbF-1 SO-8 Package Outline Dimensions are shown in milimeters (inches)
D 5
A
8
6
7
6
5 H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
6X
e1
0.25
.0098
0.10
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
0.25 [.010]
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A C
8X b
MAX
b
e1
e
MILLIMET ERS
MIN
A
E
INCHES
DIM
B
A1
y 0.10 [.004]
8X L
8X c
7
C A B
FOOT PRINT
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONTROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGTH OF LEAD FOR S OLDERING TO A S UBS TRAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOS FET)
INT ERNAT IONAL RECTIFIER LOGO
XXXX F7101
DATE CODE (YWW) P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S ITE CODE LOT CODE PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7904PbF-1 SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)) TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, Q1: L = 7.7mH, RG = 25Ω, IAS = 6.1A; Q2: L = 6.5mH, RG = 25Ω, IAS = 8.8A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
Rθ is measured at TJ approximately 90°C.
†
Qualification information
Industrial
Qualification level Moisture Sensitivity Level
(per JEDE C JE S D47F SO-8
RoHS compliant
††
guidelines) MS L1 ††
(per JEDE C J-S T D-020D ) Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10
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