Transcript
PD - 97119
IRF8721PbF Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low Gate Charge l Low RDS(on) at 4.5V VGS l Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Lead-Free Description
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
30V 8.5m:@VGS = 10V 8.3nC A A D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
Max.
Units
30 ± 20
V
14
IDM
Continuous Drain Current, VGS @ 10V Pulsed Drain Current
110
PD @TA = 25°C
Power Dissipation
2.5
PD @TA = 70°C
Power Dissipation
TJ
Linear Derating Factor Operating Junction and
TSTG
Storage Temperature Range
ID @ TA = 70°C
11
c
A W
1.6 0.02 -55 to + 150
W/°C °C
Thermal Resistance Parameter
RθJL RθJA
g Junction-to-Ambient fg Junction-to-Drain Lead
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes through
are on page 9
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1
07/30/07
IRF8721PbF Static @ TJ = 25°C (unless otherwise specified) Parameter
Min. Typ. Max. Units V
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
VGS = 0V, ID = 250μA
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.021
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
6.9
8.5
mΩ
–––
10.6
12.5
VGS = 10V, ID = 14A VGS = 4.5V, ID = 11A
VDS = VGS, ID = 25μA
VGS(th)
Gate Threshold Voltage
1.35
–––
2.35
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-6.2
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
μA
VDS = 24V, VGS = 0V
nA
VGS = 20V
IGSS
–––
–––
1.0
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
e e
VDS = 24V, VGS = 0V, TJ = 125°C VGS = -20V S
VDS = 15V, ID = 11A
gfs
Forward Transconductance
27
–––
–––
Qg
Total Gate Charge
–––
8.3
12
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.0
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.0
–––
Qgd
Gate-to-Drain Charge
–––
3.2
–––
ID = 11A
Qgodr
See Fig. 16a and 16b
VDS = 15V nC
VGS = 4.5V
Gate Charge Overdrive
–––
2.0
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
4.2
–––
Qoss RG
Output Charge
–––
5.0
–––
nC
Gate Resistance
–––
1.8
Ω
td(on)
Turn-On Delay Time
–––
8.2
3.0 –––
tr
Rise Time
–––
11
–––
td(off)
Turn-Off Delay Time
–––
8.1
–––
tf
Fall Time
–––
7.0
–––
See Fig. 15a
Ciss
Input Capacitance
–––
1040
–––
VGS = 0V
Coss
Output Capacitance
–––
229
–––
Crss
Reverse Transfer Capacitance
–––
114
–––
VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 11A
ns
pF
RG = 1.8Ω
VDS = 15V ƒ = 1.0MHz
Avalanche Characteristics EAS
Parameter Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
68
mJ
–––
11
A
Diode Characteristics Parameter
Min. Typ. Max. Units
Conditions D
IS
Continuous Source Current
–––
–––
3.1
ISM
(Body Diode) Pulsed Source Current
–––
–––
112
showing the integral reverse
VSD
(Body Diode) Diode Forward Voltage
–––
–––
1.0
V
p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V
trr
Reverse Recovery Time
–––
14
21
ns
TJ = 25°C, IF = 11A, VDD = 15V
Qrr
Reverse Recovery Charge
–––
15
23
nC
di/dt = 300A/μs
ton
Forward Turn-On Time
2
c
MOSFET symbol A
G S
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF8721PbF 1000
1000
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
1
0.1
100 BOTTOM
10
2.3V
≤ 60μs PULSE WIDTH Tj = 25°C
2.3V
≤ 60μs PULSE WIDTH Tj = 150°C
1
0.01 0.1
1
10
0.1
100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
VDS = 15V ID, Drain-to-Source Current (A)
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
≤ 60μs PULSE WIDTH
100
10
TJ = 150°C
1
TJ = 25°C
0.1
0.01 1.0
2.0
3.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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4.0
ID = 14A VGS = 10V
1.5
1.0
0.5 -60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF8721PbF 10000
16 VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
C, Capacitance (pF)
Coss = Cds + Cgd
1000
Ciss Coss Crss
ID= 11A VDS = 24V VDS= 15V
12
8
4
0
100 1
10
0
100
5
1000
1000 ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
20
25
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
TJ = 150°C 10
TJ = 25°C
OPERATION IN THIS AREA LIMITED BY R DS (on)
100 100μsec 1msec
10
10msec 1
VGS = 0V
TA = 25°C Tj = 150°C Single Pulse
0.1
0.1 0.2
0.4
0.6
0.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
15
Qg, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1
10
1.0
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF8721PbF 2.4
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
16
12
8
4
0
2.2 2.0 1.8
ID = 25μA
1.6 1.4 1.2 1.0 0.8
25
50
75
100
125
150
-75
-50
-25
TA, Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs. Case Temperature
0
25
50
75
100
125
150
TJ, Temperature ( °C )
Fig 10. Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA )
D = 0.50 10
0.20 0.10 0.05 0.02 0.01
1
τJ
R1 R1 τJ τ1
R2 R2
R3 R3
R4 R4
τ3
τ4
τa τ1
τ2
τ2
τ3
τ4
Ci= τi/Ri Ci i/Ri
0.1
Ri (°C/W) τι (sec) 1.935595 0.000148 7.021545 0.019345 26.61013 0.81305 14.43961 26.2
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS (on), Drain-to -Source On Resistance (mΩ)
IRF8721PbF 16
14
12
TJ = 125°C
10
8
TJ = 25°C
6 2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
EAS, Single Pulse Avalanche Energy (mJ)
300
ID = 14A
ID 0.83A 1.05A BOTTOM 11A
250
TOP
200
150
100
50
0 25
50
75
V(BR)DSS tp DRIVER
L
D.U.T
+ V - DD
IAS 20V
A
0.01Ω
tp
I AS
Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG
RD
Fig 14b. Unclamped Inductive Waveforms VDS 90%
D.U.T. +
-VDD
V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1
10% VGS td(on)
Fig 15a. Switching Time Test Circuit
6
150
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
RG
125
Starting T J, Junction Temperature (°C)
Fig 12. On-Resistance vs. Gate Voltage
VDS
100
tr
t d(off)
tf
Fig 15b. Switching Time Waveforms
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IRF8721PbF Id
Current Regulator Same Type as D.U.T.
Vds Vgs
50KΩ .2μF
12V
.3μF
+ V - DS
D.U.T.
Vgs(th)
VGS 3mA
IG
ID
Current Sampling Resistors
Qgodr
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
D.U.T
Driver Gate Drive P.W.
+
+
Reverse Recovery Current
VDD
P.W. Period
D.U.T. ISD Waveform
+
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
D=
*
• • • •
Period
VGS=10V
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
-
RG
Qgs2 Qgs1
Qgd
+ -
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
Body Diode
VDD
Forward Drop
Inductor Curent Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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IRF8721PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D
DIM
B 5
A
8
6
7
6
5 H
E 1
6X
2
3
0.25 [.010]
4
A
e
e1
8X b 0.25 [.010]
A
A1
INCH E S
MIL L IME T E R S
MIN
MAX
MIN
A
.0532
.0688
1.35
1.75
MAX
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B AS IC
1.27 B AS IC
e1
.025 B AS IC
0.635 B AS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45° C
y 0.10 [.004]
8X L
8X c
7
C A B
FOOT PRINT 8X 0.72 [.028]
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information EXAMPLE: THIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL RECTIFIER LOGO
XXXX F7101
DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF8721PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.09mH, RG = 25Ω, IAS = 11A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2007
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