Transcript
PD -95673A
IRF8910PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l
VDSS 20V
RDS(on) max
13.4m:@VGS = 10V
ID 10A
Lead-Free
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
S1
G2
SO-8
Top View
Absolute Maximum Ratings Max.
Units
VDS
Drain-to-Source Voltage
Parameter
20
V
VGS
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
± 20 8.3
IDM
Continuous Drain Current, VGS @ 10V Pulsed Drain Current
PD @TA = 25°C
Power Dissipation
2.0
PD @TA = 70°C
Power Dissipation
1.3
TJ
Linear Derating Factor Operating Junction and
TSTG
Storage Temperature Range
ID @ TA = 25°C ID @ TA = 70°C
10
c
A
82 W W/°C °C
0.016 -55 to + 150
Thermal Resistance Parameter RθJL RθJA
Typ.
Max.
Units
Junction-to-Drain Lead
–––
42
°C/W
Junction-to-Ambient
–––
62.5
fg
Notes through
are on page 10
www.irf.com
1 07/09/08
IRF8910PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on)
Min. Typ. Max. Units 20
–––
–––
Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
––– –––
0.015 10.7
––– 13.4
V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 10A
VGS(th) ∆VGS(th)/∆TJ IDSS
Gate Threshold Voltage
––– 1.65
14.6 –––
18.3 2.55
VGS = 4.5V, ID = 8.0A VDS = VGS, ID = 250µA
Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
––– –––
-4.8 –––
––– 1.0
IGSS
Gate-to-Source Forward Leakage
––– –––
––– –––
150 100
nA
Gate-to-Source Reverse Leakage Forward Transconductance
––– 24
––– –––
-100 –––
S
Total Gate Charge Pre-Vth Gate-to-Source Charge
––– –––
7.4 2.4
11 –––
Post-Vth Gate-to-Source Charge Gate-to-Drain Charge
––– –––
0.80 2.5
––– –––
Qgodr Qsw
Gate Charge Overdrive Switch Charge (Qgs2 + Qgd)
––– –––
1.7 3.3
––– –––
Qoss td(on)
Output Charge Turn-On Delay Time
––– –––
4.4 6.2
––– –––
nC
VDS = 10V, VGS = 0V VDD = 10V, VGS = 4.5V
tr td(off)
Rise Time Turn-Off Delay Time
––– –––
10 9.7
––– –––
ns
ID = 8.2A Clamped Inductive Load
tf Ciss
Fall Time Input Capacitance
––– –––
4.1 960
––– –––
Coss Crss
Output Capacitance Reverse Transfer Capacitance
––– –––
300 160
––– –––
gfs Qg Qgs1 Qgs2 Qgd
V
Conditions
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
e e
mV/°C µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 8.2A VDS = 10V nC
VGS = 4.5V ID = 8.2A See Fig. 6
VGS = 0V pF
VDS = 10V ƒ = 1.0MHz
Avalanche Characteristics EAS IAR
Parameter Single Pulse Avalanche Energy Avalanche Current
c
Typ. ––– –––
d
Max. 19 8.2
Units mJ A
Diode Characteristics Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
2.5
ISM
(Body Diode) Pulsed Source Current
–––
–––
82
VSD trr
(Body Diode) Diode Forward Voltage Reverse Recovery Time
––– –––
––– 17
1.0 26
V ns
Qrr
Reverse Recovery Charge
–––
6.5
9.7
nC
2
c
Conditions MOSFET symbol
A
showing the integral reverse
D
G
S p-n junction diode. TJ = 25°C, IS = 8.2A, VGS = 0V TJ = 25°C, IF = 8.2A, VDD = 10V di/dt = 100A/µs
e
e
www.irf.com
IRF8910PbF 100
100
10 BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS 10V 8.0V 5.5V 4.5V 3.5V 3.0V 2.8V 2.5V
1
2.5V 0.1
BOTTOM
10
2.5V
≤60µs PULSE WIDTH Tj = 25°C
0.01 0.1
1
Tj = 150°C 0.1
100
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (Α)
≤60µs PULSE WIDTH
1
10
VGS 10V 8.0V 5.5V 4.5V 3.5V 3.0V 2.8V 2.5V
10 T J = 150°C T J = 25°C
1
VDS = 10V ≤60µs PULSE WIDTH
0.1 1
2
3
4
5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
ID = 10A VGS = 10V
1.0
0.5
6
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
3
IRF8910PbF 10000
6.0
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
ID= 8.2A
Ciss
1000
Coss
Crss
VDS= 16V VDS= 10V
5.0
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
C oss = C ds + C gd
4.0 3.0 2.0 1.0
100
0.0 1
10
100
0
VDS, Drain-to-Source Voltage (V)
3
4
5
6
7
8
9
10
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.00
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
2
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
T J = 150°C
10.00
T J = 25°C
0.10
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
1.00
10
100µsec 1msec
1
10msec
T A = 25°C Tj = 150°C Single Pulse
VGS = 0V
0.01
0.1 0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
1
1.6
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF8910PbF 10
2.5
VGS(th) Gate threshold Voltage (V)
9
ID, Drain Current (A)
8 7 6 5 4 3 2 1
2.0
ID = 250µA
1.5
1.0
0 25
50
75
100
125
-75
150
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
T A , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs. Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA )
D = 0.50 0.20
10
0.10 0.05 0.02
1
τJ
0.01
0.1
SINGLE PULSE ( THERMAL RESPONSE )
R1 R1 τJ τ1
R2 R2 τ2
τ1
τ2
R3 R3 τ3
τ3
R4 R4 τ4
τ4
Ci= τi/Ri Ci= τi/Ri
R5 R5 τ5
Ri (°C/W)
τi (sec)
1.2647
0.000091
2.0415
0.000776
18.970
0.188739
23.415
0.757700
τC τC τ5
16.803
25.10000 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF8910PbF 80
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on) , Drain-to -Source On Resistance (mΩ)
40.00 ID = 10A 30.00
20.00
T J = 125°C
10.00
T J = 25°C
0.00
ID TOP 3.4A 4.9A BOTTOM 8.2A
70 60 50 40 30 20 10 0
3
4
5
6
7
8
9
10
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Current Regulator Same Type as D.U.T.
V(BR)DSS tp
15V
50KΩ 12V
.3µF
DRIVER
L
VDS
.2µF
D.U.T. D.U.T
RG
+ - VDD
IAS 20V VGS
tp
A
0.01Ω
+ V - DS
VGS
I AS
3mA
IG
Fig 14. Unclamped Inductive Test Circuit and Waveform
ID
Current Sampling Resistors
Fig 15. Gate Charge Test Circuit
LD VDS
VDS
+
90%
V DD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1%
Fig 16. Switching Time Test Circuit
6
10%
VGS td(on)
tr
td(off)
tf
Fig 17. Switching Time Waveforms
www.irf.com
IRF8910PbF D.U.T
Driver Gate Drive
+
-
-
*
D.U.T. ISD Waveform Reverse Recovery Current
+
RG
• • • •
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
P.W. Period VGS=10V
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
D=
Period
P.W.
+
+ -
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
Body Diode
VDD
Forward Drop
Inductor Curent ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
www.irf.com
7
IRF8910PbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET
Synchronous FET
Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses.
The power loss equation for Q2 is approximated by; * Ploss = Pconduction + Pdrive + Poutput
(
2
Ploss = Irms × Rds(on)
)
Power losses in the control switch Q1 are given by;
+ (Qg × Vg × f )
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠
This can be expanded and approximated by;
Ploss = (Irms 2 × Rds(on ) ) ⎛ Qgs 2 Qgd ⎞ ⎛ ⎞ +⎜I × × Vin × f ⎟ + ⎜ I × × Vin × f ⎟ ig ig ⎝ ⎠ ⎝ ⎠ + (Qg × Vg × f ) +
⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠
This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage.
8
*dissipated primarily in Q1. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on.
Figure A: Qoss Characteristic
www.irf.com
IRF8910PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) '
,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \
',0
%
$
+ >@
(
$
; H
H
;E >@
$
0,//,0(7(56 0,1 0$; %$6,& %$6,&
.[ &
$
\ >@
;F
;/
& $ %
127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,21 0,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7(
)22735,17 ;>@
>@
;>@
;>@
SO-8 Part Marking Information (;$03/( 7+,6,6$1,5) 026)(7
,17(51$7,21$/ 5(&7,),(5 /2*2
;;;; )
'$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
9
IRF8910PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.57mH, RG = 25Ω, IAS = 8.2A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2008
10
www.irf.com
