Transcript
PD - 97616
IRF9358PbF HEXFET® Power MOSFET VDS
-30
RDS(on) max
V
16.3
mΩ
23.8
mΩ
Qg (typical)
19
nC
ID
-9.2
A
(@VGS = -10V)
RDS(on) max (@VGS = -4.5V)
(@TA = 25°C)
S2 1
D
G2 2 S1 3 G1 4
8 D2 7 D2
D
6 D1 5 D1
SO-8
Applications
• Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen
Orderable part number
Package Type
IRF9358PbF IRF9358TRPbF
SO8 SO8
Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier ⇒
Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000
Note
Absolute Maximum Ratings Parameter
Max.
VDS
Drain-to-Source Voltage
-30
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
-9.2
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
-7.3
IDM
Pulsed Drain Current
-73
PD @TA = 25°C
Power Dissipation
PD @TA = 70°C
Power Dissipation
f f
c
2.0 1.3
Linear Derating Factor
0.016
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Units V
A
W W/°C °C
Notes through are on page 2
www.irf.com
1 1/2/11
IRF9358PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS
Conditions
Min. Typ. Max. Units
V VGS = 0V, ID = -250μA V/°C Reference to 25°C, ID = -1mA VGS = -10V, ID = -9.2A mΩ VGS = -4.5V, ID = -7.3A
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
-30 –––
––– 0.02
––– –––
Static Drain-to-Source On-Resistance
––– –––
13.0 19.0
16.3 23.8
ΔVGS(th) IDSS
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
-1.3 ––– –––
-1.8 -5.9 –––
IGSS
Gate-to-Source Forward Leakage
––– –––
––– –––
Gate-to-Source Reverse Leakage Forward Transconductance
––– 23
––– –––
-2.4 V VDS = VGS, ID = -25μA ––– mV/°C VDS = -24V, VGS = 0V -1.0 μA VDS = -24V, VGS = 0V, TJ = 125°C -150 VGS = -20V -100 nA VGS = 20V 100 ––– S VDS = -10V, ID = -7.3A
Total Gate Charge Total Gate Charge Gate-to-Source Charge
––– ––– –––
19 38 5.8
––– ––– –––
Qgd RG
Gate-to-Drain Charge Gate Resistance
––– –––
8.9 15
––– –––
td(on) tr
Turn-On Delay Time Rise Time
––– –––
5.7 7.2
––– –––
td(off) tf Ciss
Turn-Off Delay Time Fall Time Input Capacitance
––– ––– –––
146 69 1740
––– ––– –––
Coss Crss
Output Capacitance Reverse Transfer Capacitance
––– –––
360 240
––– –––
ΔΒVDSS/ΔTJ RDS(on) VGS(th)
gfs Qg Qg Qgs
h h
h
h h
e e
nC nC
VDS = -15V, VGS = -4.5V, ID = - 7.3A VGS = -10V VDS = -15V ID = -7.3A
Ω ns
VDD = -15V, VGS = -4.5V ID = -1.0A
e
RG = 6.8Ω See Figs. 19a &19b VGS = 0V
pF
VDS = -25V ƒ = 1.0MHz
Avalanche Characteristics Parameter EAS IAR
Single Pulse Avalanche Energy Avalanche Current
Diode Characteristics
c
d
Parameter
Typ.
Max.
Units
––– –––
210 -7.3
mJ A
Conditions
Min. Typ. Max. Units
IS
Continuous Source Current
ISM
(Body Diode) Pulsed Source Current
–––
–––
-2.0
–––
–––
-73
MOSFET symbol A
c
(Body Diode)
showing the integral reverse
D
G
p-n junction diode.
S
Diode Forward Voltage
–––
–––
-1.2
trr
Reverse Recovery Time
–––
55
83
ns
TJ = 25°C, IF = -2.0A, VDD = -24V
Qrr
Reverse Recovery Charge
–––
35
53
nC
di/dt = 100A/μs
V
TJ = 25°C, IS = -2.0A, VGS = 0V
e
VSD
Thermal Resistance Parameter RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient
f
g
Typ.
Max.
–––
20
–––
62.5
e
Units °C/W
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 4.6mH, RG = 25Ω, IAS = -6.4A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing.
2
www.irf.com
IRF9358PbF 100
100
10 BOTTOM
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.5V
1
0.1
-2.5V
10 BOTTOM
-2.5V
1
≤60μs PULSE WIDTH Tj = 150°C
≤60μs PULSE WIDTH Tj = 25°C 0.1
0.01 0.1
1
10
0.1
100
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics 100
1.6 RDS(on) , Drain-to-Source On Resistance (Normalized)
-ID, Drain-to-Source Current(A)
1
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
TJ = 150°C
10
TJ = 25°C
1
VDS = -15V ≤60μs PULSE WIDTH
0.1
ID = -9.2A
VGS = -10V
1.4
1.2
1.0
0.8
0.6 2
3
4
5
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics 10000
Fig 4. Normalized On-Resistance vs. Temperature 14
-VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Ciss 1000
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.5V
Coss Crss
ID= -7.3A 12 10
VDS= -24V VDS= -15V VDS= -6.0V
8 6 4 2 0
100
0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
10
20
30
40
50
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRF9358PbF 1000
-ID, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
100
100
TJ = 150°C
10
OPERATION IN THIS AREA LIMITED BY R DS (on)
TJ = 25°C 1
10
TA = 25°C Tj = 150°C Single Pulse 0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
-VSD , Source-to-Drain Voltage (V)
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
10
-VGS(th), Gate threshold Voltage (V)
2.5
8 -ID, Drain Current (A)
1msec
1
VGS = 0V 0.1
10msec
DC
6
4
2
2.0
ID = -25μA
1.5
1.0
0
0.5 25
50
75
100
125
150
-75 -50 -25
TA , Ambient Temperature (°C)
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Ambient Temperature
Thermal Response ( ZthJA ) °C/W
100 D = 0.50 0.20 0.10 0.05 0.02 0.01
10
1
0.1
0.01
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006
1E-005
0.0001
0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
www.irf.com
50
( Ω) RDS(on), Drain-to -Source On Resistance m
RDS(on), Drain-to -Source On Resistance (mΩ)
IRF9358PbF ID = -9.2A 40
30 TJ = 125°C
20
10 TJ = 25°C 0 2
4
6
8
10
12
14
16
18
40
30 VGS = -4.5V 20 VGS = -10V 10
20
0
10
20
30
40
-VGS, Gate -to -Source Voltage (V)
60
70
Fig 13. Typical On-Resistance vs. Drain Current 1000
1000 ID -0.9A -1.5A BOTTOM -7.3A TOP
800
Single Pulse Power (W)
800
600
400
600
400
200
200
0
0 25
50
75
100
125
1E-5
150
1E-4
Fig 14. Maximum Avalanche Energy vs. Drain Current
D.U.T *
1E-2
Driver Gate Drive
+
-
D.U.T. ISD Waveform Reverse Recovery Current
+
di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
+ -
Re-Applied Voltage
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Body Diode
www.irf.com
VDD
Forward Drop
Inductor Current Inductor Curent Ripple ≤ 5%
Reverse Polarity of D.U.T for P-Channel
P.W. Period
*
• • • •
1E+0
VGS=10V
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
D=
Period
P.W.
1E-1
Fig 15. Typical Power vs. Time
+
RG
1E-3
Time (sec)
Starting TJ , Junction Temperature (°C)
*
50
-ID, Drain Current (A)
Fig 12. On-Resistance vs. Gate Voltage EAS , Single Pulse Avalanche Energy (mJ)
50
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5
IRF9358PbF Id Vds Vgs
L VCC
DUT
0
20K 1K
Vgs(th)
SS
Qgodr
Fig 17a. Gate Charge Test Circuit
I AS
D.U.T
RG
IAS
-V GS -20V
tp
Qgs2 Qgs1
Fig 17b. Gate Charge Waveform
L
VDS
Qgd
VDD A
DRIVER 0.01Ω
tp V(BR)DSS 15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
VDS
RD td(on)
VGS RG
t d(off)
tf
VGS
D.U.T.
10%
+
V DD
-VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 19a. Switching Time Test Circuit
6
tr
90% VDS
Fig 19b. Switching Time Waveforms
www.irf.com
IRF9358PbF SO-8 Package Outline(Mosfet Dimensions are shown in milimeters (inches)
D
& Fetky) DIM
B 5
A
8
6
7
6
H
E
0.25 [.010] 1
2
3
A
4
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
e1
6X
e
e1
1.27 BAS IC
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y 0.10 [.004]
0.25 [.010]
MAX
K x 45°
A C
8X b
MILLIMETERS
MAX
A
5
INCHES MIN
A1
8X L
8X c
7
C A B
FOOT PRINT NOT ES :
8X 0.72 [.028]
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD F OR S OLDERING T O A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL RECT IFIER LOGO
XXXX F7101
DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
7
IRF9358PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
†
Qualification Information
Consumer ††
Qualification level
Moisture Sensitivity Level RoHS Compliant
(per JEDEC JESD47F††† guidelines) MSL1
SO-8
(per JEDEC J-STD-020D†††) Yes
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2011
8
www.irf.com
