Transcript
PD - 97521
IRF9388PbF HEXFET® Power MOSFET
VDS
-30 ±25
V V
11.9
mΩ
-12
A
VGS max RDS(on) max (@VGS = -10V)
ID (@TA = 25°C)
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SO-8
Applications • Adaptor Input Switch for Notebook PC Features and Benefits Features
Resulting Benefits
25V VGS max
Direct Drive at High V G S
Industry-Standard SO8 Package
Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
Orderable part number
Package Type
IRF9388PbF IRF9388TRPbF
SO8 SO8
Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel
Note
Absolute Maximum Ratings Parameter
Max.
VDS
Drain-to-Source Voltage
-30
VGS
± 25
ID @ TA = 25°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
-9.6
IDM
Pulsed Drain Current
-96
PD @TA = 25°C PD @TA = 70°C
f Power Dissipation f Power Dissipation
c
Units V
-12
2.5 1.6
Linear Derating Factor
0.02
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
A
W W/°C °C
Notes through are on page 2
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IRF9388PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
VGS(th) ΔVGS(th)
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge
-30 ––– ––– ––– -1.3 ––– ––– ––– ––– ––– 20 –––
––– 0.021 8.5 10 -1.8 -5.8 ––– ––– ––– ––– ––– 18
Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
35 5.3 8.5 15 19 57 80 66 1680 350 220
Static Drain-to-Source On-Resistance
h h
h
h h
Conditions
Min. Typ. Max. Units
––– V VGS = 0V, ID = -250μA ––– V/°C Reference to 25°C, ID = -1mA VGS = -20V, ID = -12A ––– mΩ VGS = -10V, ID = -12A 11.9 -2.4 V VDS = VGS, ID = -25μA ––– mV/°C VDS = -24V, VGS = 0V -1.0 μA VDS = -24V, VGS = 0V, TJ = 125°C -150 VGS = -25V 10 μA VGS = 25V 10 ––– S VDS = -10V, ID = -9.6A ––– nC VDS = -15V, VGS = -4.5V, ID = - 9.6A VGS = -10V 52 nC VDS = -15V ––– ID = -9.6A –––
e e
––– ––– ––– ––– ––– ––– ––– –––
Ω
ns
pF
VDD = -15V, VGS = -4.5V ID = -1.0A RG = 6.8Ω
e
See Figs. 20a &20b VGS = 0V VDS = -25V ƒ = 1.0MHz
Avalanche Characteristics Parameter EAS IAR
Single Pulse Avalanche Energy Avalanche Current
Diode Characteristics
c
d
Parameter IS ISM
Typ.
Max.
Units
––– –––
120 -9.6
mJ A
Conditions
Min. Typ. Max. Units
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
c
–––
–––
-2.5
–––
–––
-96
A
MOSFET symbol showing the integral reverse p-n junction diode.
D
G S
e
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -2.5A, VGS = 0V
trr
Reverse Recovery Time
–––
51
76
ns
TJ = 25°C, IF = -2.5A, VDD = -24V
Qrr
Reverse Recovery Charge
–––
35
53
nC
di/dt = 100A/μs
Thermal Resistance Parameter RθJL RθJA
Junction-to-Drain Lead Junction-to-Ambient
f
g
e
Typ.
Max.
Units
––– –––
20 50
°C/W
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 2.6mH, RG = 25Ω, IAS = -9.6A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing.
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IRF9388PbF 100
10 TOP
1 BOTTOM
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
100
VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V
0.1 -2.5V
≤60μs PULSE WIDTH Tj = 25°C
0.01
10
1
≤60μs PULSE WIDTH Tj = 150°C
1
10
100
0.1
-V DS, Drain-to-Source Voltage (V)
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.6 RDS(on) , Drain-to-Source On Resistance (Normalized)
100
-ID, Drain-to-Source Current (A)
BOTTOM
-2.5V
0.1 0.1
10
TJ = 150°C 1
TJ = 25°C 0.1
V DS = -10V ≤ 60μs PULSE WIDTH 0.01 1.0
2.0
3.0
4.0
5.0
6.0
1.2
1.0
0.8
0.6 -60 -40 -20 0
Fig 4. Normalized On-Resistance vs. Temperature 14 -V GS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + Cgd, C ds SHORTED C rss = C gd C oss = C ds + Cgd
Ciss 1000
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics 10000
ID = -12A V GS = -10V
1.4
-V GS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V
TOP
Coss Crss
ID= -9.6A
12
V DS= -24V V DS= -15V
10
V DS= -6.0V
8 6 4 2 0
100 1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
8
16
24
32
40
48
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRF9388PbF 1000
-ID, Drain-to-Source Current (A)
-ISD, Reverse Drain Current (A)
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
TJ = 150°C 10
1
TJ = 25°C
1msec 10
10msec
1
TA = 25°C Tj = 150°C Single Pulse
V GS = 0V 0.1 0.2
0.4
0.6
0.8
1.0
0.1
1
-V SD, Source-to-Drain Voltage (V)
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
12 -V GS(th) , Gate threshold Voltage (V)
2.5
10 -ID, Drain Current (A)
DC
0.1
8 6 4 2 0
2.0
ID = -25μA
1.5
1.0 25
50
75
100
125
150
-75 -50 -25
TA , Ambient Temperature (°C)
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Ambient Temperature
Thermal Response ( Z thJA ) °C/W
100 D = 0.50 0.20 0.10 0.05 0.02 0.01
10
1
0.1
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + TA
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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50
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRF9388PbF ID = -12A 40
30
20
TJ = 125°C
10 TJ = 25°C 0 0
5
10
15
50 40 30 V GS = -4.5V
20 10
V GS = -10V 0 0
20
10
20
30
50
60
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage 500
1000
ID TOP -2.3A -3.3A BOTTOM -9.6A
800
Single Pulse Power (W)
400
300
200
600
400
100
200
0
0
25
50
75
100
125
1E-5
150
1E-4
Fig 14. Maximum Avalanche Energy vs. Drain Current
D.U.T *
1E-2
Driver Gate Drive
+
-
D.U.T. ISD Waveform Reverse Recovery Current
+
di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
+ -
Re-Applied Voltage
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Body Diode
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VDD
Forward Drop
Inductor Current Inductor Curent Ripple ≤ 5%
Reverse Polarity of D.U.T for P-Channel
P.W. Period
*
• • • •
1E+0
VGS=10V
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
D=
Period
P.W.
-
1E-1
Fig 16. Typical Power vs. Time
+
RG
1E-3
Time (sec)
Starting TJ , Junction Temperature (°C)
*
40
-ID, Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
EAS , Single Pulse Avalanche Energy (mJ)
60
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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IRF9388PbF Id Vds Vgs
L VCC
DUT
0
20K 1K
Vgs(th)
SS
Qgodr
Fig 18a. Gate Charge Test Circuit
I AS
D.U.T
RG
IAS
-V GS -20V
tp
Qgs2 Qgs1
Fig 18b. Gate Charge Waveform
L
VDS
Qgd
VDD A
DRIVER 0.01Ω
tp V(BR)DSS 15V
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
VDS
RD td(on)
VGS RG
t d(off)
tf
VGS
D.U.T.
-
+
10% V DD
-VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 20a. Switching Time Test Circuit
6
tr
90% VDS
Fig 20b. Switching Time Waveforms
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IRF9388PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information (;$03/( 7+,6,6$1,5) 026)(7
,17(51$7,21$/ 5(&7,),(5 /2*2
;;;; )
'$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF9388PbF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
†
Qualification Information
Consumer ††
Qualification level
Moisture Sensitivity Level RoHS Compliant
(per JEDEC JESD47F††† guidelines) MSL1
SO-8
(per JEDEC J-STD-020D†††) Yes
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.6/2010
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