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Irfe420 Jantx2n6794u Jantxv2n6794u Hexfet

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PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED ® HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFE420 500V 3.0Ω ID 1.4A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference. Features: n n n n n n n n Surface Mount Small Footprint Alternative to TO-39 Package Hermetically Sealed Dynamic dv/dt Rating Avalanche Energy Rating Simple Drive Requirements Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 1.4 0.88 5.6 14 0.11 ±20 0.242 2.2 1.4 3.5 -55 to 150 300 (for 5 S) 0.42 (typical) A W W/°C V mJ A mJ V/ns °C g For footnotes refer to the last page www.irf.com 1 08/03/07 IRFE420, JANTX2N6794U, JANTXV2N6794U Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS Parameter Min Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA — 0.43 — V/°C Reference to 25°C, ID = 1.0mA — — 2.0 1.0 — — — — — — — — 3.0 3.1 4.0 — 25 250 ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.1 100 -100 25 6.0 18 40 30 60 35 — C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 350 80 35 — — Ω V S µA nA nC Test Conditions VGS = 10V, ID = 0.88A„ VGS = 10V, ID = 1.4A „ VDS = VGS, ID = 250µA VDS > 15V, IDS = 0.88A„ V DS = 400V, VGS = 0V VDS = 400V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V, ID = 1.4A VDS = 250V VDD = 225V, ID = 1.4A VGS = 10V, RG = 7.5Ω, ns nH Measured from the center of drain pad to center of source pad pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 1.4 5.6 1.2 900 5.9 Test Conditions A V ns µC Tj = 25°C, IS =1.4A, VGS = 0V „ Tj = 25°C, IF = 1.4A, di/dt ≤ 100A/µs VDD ≤ 50V „ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJ-PCB Junction to Case Junction to PC Board Min Typ Max Units — — — — 8.93 26 °C/W Test Conditions Soldered to a copper clad PC board Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRFE420, JANTX2N6794U, JANTXV2N6794U Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFE420, JANTX2N6794U, JANTXV2N6794U 13 a & b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRFE420, JANTX2N6794U, JANTXV2N6794U V DS VGS RG RD D.U.T. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFE420, JANTX2N6794U, JANTXV2N6794U 15V L VDS D.U.T RG 20V VGS IAS DRIVER + V - DD A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 10 V QGS .2µF .3µF D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFE420, JANTX2N6794U, JANTXV2N6794U Foot Notes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = 50V, starting TJ = 25°C, Peak IL = 2.2A, L = 100µH ƒ ISD ≤ 1.4A, di/dt ≤ 50A/µs, VDD≤ 500V, TJ ≤ 150°C Suggested RG =7.5 Ω „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — LCC-18 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/2007 www.irf.com 7