Irfi260 Hexfet Transistor N-channel

Transcript

Provisional Data Sheet No. PD 9.809 IRFI260 HEXFET® TRANSISTOR N-CHANNEL Product Summary Ω, HEXFET 200 Volt, 0.060Ω HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves ver y low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required. Part Number IRFI260 BVDSS 200V RDS(on) 0.060Ω ID 45A* Features: n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ T STG IRFI260 Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ Operating Junction 45* 29 180 300 2.4 ±20 700 45 30 4.3 -55 to 150 * ID current limited by pin diameter A W W/K … V mJ A mJ V/ns oC Storage Temperature Range Lead Temperature Weight Units 300 (0.063 in. (1.6mm) from case for 10 sec.) 10.9 (typical) g IRFI260 Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BV DSS Drain-to-Source Breakdown Voltage Min. 200 Typ. Max. Units — — Test Conditions V ∆BVDSS/∆TJ Temp. Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current — — — 2.0 22 — — I GSS I GSS Qg Q gs Q gd t d(on) tr t d(off) Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time — — — — — — — — VGS = 0V, ID = 1.0 mA 0.24 — V/°C Reference to 25°C, ID = 1.0 mA — 0.060 VGS = 10V, ID =29A „ Ω — 0.068 VGS = 10V, ID = 45A — 4.0 V VDS = VGS, I D = 250µA — — S( ) VDS ≥ 15V, IDS = 29A „ — 25 VDS =0.8 x Max Rating,VGS=0V µA — 250 VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C — 100 VGS = 20V nA — -100 VGS = -20V — 230 VGS =10V, I D = 45A — 40 nC VDS = Max. Rating x 0.5 — 110 — 29 VDD = 100V, ID =45A, — 120 ns RG = 2.35Ω, VGS =10V — 110 tf LD Fall Time Internal Drain Inductance — — — 8.7 92 — LS Internal Source Inductance — 8.7 — nH C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5100 1100 280 — — — pF Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Modified MOSFET symbol showing the internal inductances. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0V, VDS = 25V f = 1.0 MHz IRFI260 Device Source-Drain Diode Ratings and Characteristics Parameter IS I SM Min. Typ. Max. Units Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)  VSD Diode Forward Voltage t rr Reverse Recovery Time Q RR Reverse Recovery Charge ton Forward Turn-On Time — — — — 45* 180 A — — — — — — 1.8 420 4.9 V ns µC Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 45A, VGS = 0V „ Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs VDD ≤ 50V „ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ @ VDD = 50V, Star ting T J = 25°C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 45A, VGS = 10V, 25 ≤ R G ≤ 200Ω Min. Typ. Max. Units Test Conditions — — — — 0.42 — 30 0.21 — K/W … typical socket mount mounting surface flat, smooth ƒ ISD ≤ 45A, di/dt ≤ 130 A/µs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% … K/W = °C/W W/K = W/°C IRFI260 Device Case Outline and Dimensions — TO-259AA NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 2. All dimensions in millimeters (inches) LEGEND: 1. Drain 2.. Source 3. Gate CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxides packages shall not be placed in acids that will produce fumes containing beryllium. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/96