Transcript
PD - 94808
IRFIZ24NPbF Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.07Ω
G
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
ID = 14A
S
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
14 10 68 29 0.19 ± 20 71 10 2.9 5.0 -55 to + 175
Units A W W/°C V mJ A mJ V/ns °C
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Thermal Resistance Parameter RθJC RθJA
Junction-to-Case Junction-to-Ambient
Typ.
Max.
Units
––– –––
5.2 65
°C/W 11/3/03
IRFIZ24NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on) VGS(th) gfs
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Min. 55 ––– ––– 2.0 4.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.052 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 4.9 34 19 27
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss Coss Crss C
Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
––– ––– ––– –––
370 140 65 12
V(BR)DSS ∆V(BR)DSS/∆TJ
IGSS
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.07 Ω VGS = 10V, ID = 7.8A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 10A 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 20 ID = 10A 5.3 nC VDS = 44V 7.6 VGS = 10V, See Fig. 6 and 13 ––– VDD = 28V ––– ID = 10A ns ––– R G = 24Ω ––– R D = 2.6Ω, See Fig. 10 Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact ––– VGS = 0V ––– VDS = 25V pF ––– ƒ = 1.0MHz, See Fig. 5 ––– ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics IS ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 14 ––– ––– showing the A G integral reverse ––– ––– 68 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 7.8A, VGS = 0V ––– 56 83 ns TJ = 25°C, IF = 10A ––– 120 180 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
VDD = 25V, starting TJ = 25°C, L = 1.0mH
t=60s, ƒ=60Hz
ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS,
Uses IRFZ24N data and test conditions
max. junction temperature. ( See fig. 11 )
RG = 25Ω, IAS = 10A. (See Figure 12)
TJ ≤ 175°C
IRFIZ24NPbF 100
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
10
4.5V 20µs PULSE WIDTH TT CJ= 25°C
1 0.1
1
10
A
10
4.5V
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C TJ = 175°C
10
V DS = 25V 20µs PULSE WIDTH 6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
100
A
Fig 2. Typical Output Characteristics
100
5
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH TT CJ= 175°C
1 0.1
100
VDS , Drain-to-Source Voltage (V)
4
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
TOP
10
A
I D = 17A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0 -60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
IRFIZ24NPbF 700
500
Ciss
400
Coss
V GS , Gate-to-Source Voltage (V)
600
C, Capacitance (pF)
20
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
V DS = 44V V DS = 28V
16
12
300
Crss
200
I D = 10A
100
0 1
10
100
8
4
FOR TEST CIRCUIT SEE FIGURE 13
0
A
0
VDS , Drain-to-Source Voltage (V)
8
12
16
A
20
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
4
TJ = 175°C TJ = 25°C 10
VGS = 0V
1 0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
A
2.0
100 10µs
10
100µs
1ms
TC = 25°C TJ = 175°C Single Pulse
1 1
10ms 10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
A
100
IRFIZ24NPbF 15
RD
VDS
I D , Drain Current (A)
VGS
D.U.T.
RG
+
-VDD
10
10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
5
Fig 10a. Switching Time Test Circuit VDS 90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50 0.20
1
0.10 0.05 0.02 0.01 0.1
SINGLE PULSE (THERMAL RESPONSE)
PDM t1 t2
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
L
VDS
D.U.T. RG
+
V - DD
IAS
5.0 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
E AS , Single Pulse Avalanche Energy (mJ)
IRFIZ24NPbF 140
TOP 120
BOTTOM
100
80
60
40
20
VDD = 25V
0
25
tp
50
A 75
100
125
150
175
Starting TJ , Junction Temperature (°C)
VDD
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T.
50KΩ
QG
12V
.2µF .3µF
10 V QGS
ID 4.2A 7.2A 10A
D.U.T.
QGD
+ V - DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFIZ24NPbF Peak Diode Recovery dv/dt Test Circuit +
D.U.T
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+
-
-
+
RG
• • • •
Driver Gate Drive P.W.
+
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
Period
D=
-
VDD
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
Body Diode
VDD
Forward Drop
Inductor Curent Ripple ≤ 5%
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
ISD
*
IRFIZ24NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information EXAM PLE: TH IS IS AN IRFI84 0G W ITH A SSEM B LY LO T C O DE 3 43 2 ASSEM BLED O N W W 24 1999 IN TH E ASSEM BLY LIN E "K"
Note: "P" in assembly line position indicates "Lead-Free"
PART N U M BER IN TERN ATIO N AL RECTIFIER LO G O
IRFI840G 924K 34
ASSEM BLY LO T C O D E
32
D ATE CO D E YEAR 9 = 1999 WEEK 24 LIN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
