Transcript
PD-90711C
POWER MOSFET THRU-HOLE (TO-254AA)
IRFMG50 1000V, N-CHANNEL ®
HEXFET MOSFET TECHNOLOGY
Product Summary Part Number IRFMG50
RDS(on)
ID
2.0Ω
5.6A
HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
TO-254AA
Features: n n n n n
Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight
Units 5.6 3.5 22.4 150 1.2 ±20 860 5.6 15 1.0 -55 to 150
A W W/°C
V mJ A mJ V/ns °C
300(0.063in./1.6mm from case for 10 sec) 9.3 (Typical)
g
For footnotes refer to the last page
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IRFMG50
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
1000
—
—
V
—
1.4
—
V/°C
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA
—
—
2.0
Ω
VGS = 10V, ID = 3.5A
2.0 5.2 — —
— — — —
4.0 — 25 250
V S
VDS = VGS, ID = 250µA VDS > 15V, IDS = 3.5A Ã VDS = 800V ,VGS=0V VDS = 800V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =10V, ID = 5.6A VDS = 400V
∆BVDSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Typ Max Units
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
— — — — — — — — — 6.8
100 -100 200 20 110 30 44 210 60 —
C iss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
2400 240 80
— — —
µA
nA nC
Test Conditions
Ã
VDD = 400V, ID = 5.6A, VGS =10V, RG = 2.35Ω
ns
nH
pF
Measured from Drain lead (6mm/ 0.25in.) to Source lead (6mm /0.25in.) from package VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics Parameter
Min Typ Max Units
IS ISM VSD trr Q RR
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
ton
Forward Turn-On Time
— — — — —
— — — — —
5.6 22.4 1.8 1200 8.4
Test Conditions
A V ns µC
Tj = 25°C, IS = 5.6A, VGS = 0V Ã Tj = 25°C, IF = 5.6A, di/dt ≤ 100A/µs VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance Parameter RthJC RthCS RthJA
Junction-to-Case Case-to-sink Junction-to-Ambient
Min Typ Max — — —
— 0.83 0.21 — — 48
Units
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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IRFMG50
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
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Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFMG50
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Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
4
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
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IRFMG50
V DS V GS
RD
D.U.T.
RG
+
-V DD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit VDS 90%
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFMG50
15V
D.U.T.
RG
VGS 20V
DRIVER
L
VDS
IAS tp
+ V - DD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS Current Regulator Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
10 V QGS
.3µF
D.U.T.
QGD
+ V - DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
12V 0
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFMG50
Footnotes: À Repetitive Rating; Pulse width limited by
 ISD ≤ 5.6A, di/dt ≤ 120A/µs,
maximum junction temperature. Á VDD = 50V, starting TJ = 25°C, L =54mH Peak IL = 5.6A, VGS = 10V
VDD ≤ 1000V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —Low-Ohmic TO-254AA 0.12 [.005]
13.84 [.545] 13.59 [.535]
3.78 [.149] 3.53 [.139]
6.60 [.260] 6.32 [.249]
A
20.32 [.800] 20.07 [.790]
17.40 [.685] 16.89 [.665] 1
C
2
2X
B
3
14.48 [.570] 12.95 [.510]
3X
3.81 [.150]
13.84 [.545] 13.59 [.535]
1.27 [.050] 1.02 [.040]
0.84 [.033] MAX.
1.14 [.045] 0.89 [.035] 0.36 [.014]
3.81 [.150] B A
NOT ES :
1. 2. 3. 4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/2008
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