Transcript
IRFPC60LC, SiHFPC60LC Vishay Siliconix
Power MOSFET FEATURES
PRODUCT SUMMARY VDS (V)
• • • • • • • •
600
RDS(on) (Ω)
VGS = 10 V
0.40
Qg (Max.) (nC)
120
Qgs (nC)
29
Qgd (nC)
48
Configuration
Single D
Available
RoHS* COMPLIANT
DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standart in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247
G
S D
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dV/dt Rated Repetitive Avalanche Rated Lead (Pb)-free Available
S
G N-Channel MOSFET
ORDERING INFORMATION Package
TO-247 IRFPC60LCPbF SiHFPC60LC-E3 IRFPC60LC SiHFPC60LC
Lead (Pb)-free SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage
SYMBOL VDS VGS
Continuous Drain Current
VGS at 10 V
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
TC = 25 °C TC = 100 °C
ID IDM
TC = 25 °C
EAS IAR EAR PD dV/dt TJ, Tstg
for 10 s 6-32 or M3 screw
LIMIT 600 ± 30 16 10 64 2.2 1000 16 28 280 3.0 - 55 to + 150 300d 10 1.1
UNIT V
A W/°C mJ A mJ W V/ns °C lbf · in N·m
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 7.2 µH, RG = 25 Ω, IAS = 16 A (see fig. 12). c. ISD ≤ 16 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91244 S-Pending-Rev. A, 16-Jun-08
WORK-IN-PROGRESS
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IRFPC60LC, SiHFPC60LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.45
UNIT °C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 µA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.63
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
-
-
25
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance Forward Transconductance
RDS(on) gfs
ID = 9.6 Ab
VGS = 10 V
VDS = 50 V, ID = 9.6 A
µA
-
-
0.40
Ω
11
-
-
S
-
3500
-
Dynamic Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 16 A, VDS = 360 V, see fig. 6 and 13b
-
400
-
-
39
-
-
-
120
-
-
29
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
48
Turn-On Delay Time
td(on)
-
17
-
tr
-
57
-
-
43
-
-
38
-
-
5.0
-
-
13
-
-
-
16
-
-
64
Rise Time Turn-Off Delay Time Fall Time
td(off)
VDD = 300 V, ID = 16 A, RG = 4.3 Ω, RD = 18 Ω, see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead, 6 mm (0.25") from package and center of die contact
pF
nC
ns
D
nH
G
S
Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol showing the integral reverse p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 16 A, VGS = 0 Vb TJ = 25 °C, IF = 16 A, dI/dt = 100 A/μs
-
-
1.8
V
-
650
980
ns
-
6.0
9.0
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91244 S-Pending-Rev. A, 16-Jun-08
IRFPC60LC, SiHFPC60LC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 -Typical Output Characteristics, TC = 150 °C
Document Number: 91244 S-Pending-Rev. A, 16-Jun-08
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFPC60LC, SiHFPC60LC Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91244 S-Pending-Rev. A, 16-Jun-08
IRFPC60LC, SiHFPC60LC Vishay Siliconix RD
VDS VGS
D.U.T.
RG
+ - VDD 10 V
Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 %
Fig. 9 - Maximum Drain Current vs. Case Temperature
10 % VGS td(on)
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS
VDS
VDS
tp VDD D.U.T
RG
+ -
I AS
V DD
VDS
10 V tp
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91244 S-Pending-Rev. A, 16-Jun-08
IAS Fig. 12b - Unclamped Inductive Waveforms
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IRFPC60LC, SiHFPC60LC Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. QG
10 V
50 kΩ 0.2 µF
12 V
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS 3 mA
Charge IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test
Document Number: 91244 S-Pending-Rev. A, 16-Jun-08
IRFPC60LC, SiHFPC60LC Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit +
D.U.T.
Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer
+ -
-
RG
• • • •
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
Driver gate drive P.W.
+
Period
D=
+ -
VDD
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current
Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
Re-applied voltage
VDD
Body diode forward drop Inductor current Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91244.
Document Number: 91244 S-Pending-Rev. A, 16-Jun-08
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Legal Disclaimer Notice Vishay
Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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