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Irfr4620pbf Irfu4620pbf V 200v

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October 2018
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PD -96207A IRFR4620PbF IRFU4620PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS(on) typ. max. ID G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free 200V 64m: 78m: 24A D D S G G DPak IRFR4620PbF D S IPAK IRFU4620PbF G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) e dv/dt TJ TSTG Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy c d Units 24 17 100 144 0.96 ± 20 54 -55 to + 175 A W W/°C V V/ns °C 300 113 See Fig. 14, 15, 22a, 22b, c mJ A mJ Thermal Resistance Symbol RθJC RθJA RθJA Parameter j Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient i Typ. Max. Units ––– ––– ––– 1.045 50 110 °C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 11 www.irf.com 1 06/08/09 IRFR/U4620PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS RG(int) Min. Typ. Max. Units Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 200 ––– ––– 3.0 ––– ––– ––– ––– ––– 0.23 64 ––– ––– ––– ––– ––– Internal Gate Resistance ––– 2.6 Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 5mA 78 mΩ VGS = 10V, ID = 15A 5.0 V VDS = VGS, ID = 100µA VDS = 200V, VGS = 0V 20 µA 250 VDS = 200V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA VGS = -20V -100 c f ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Min. Typ. Max. Units Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance h Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) g 37 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 25 8.2 7.9 17 13.4 22.4 25.4 14.8 1710 125 30 113 317 ––– 38 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Conditions S VDS = 50V, ID = 15A ID = 15A VDS = 100V nC VGS = 10V ID = 15A, VDS =0V, VGS = 10V VDD = 130V ID = 15A ns RG = 7.3Ω VGS = 10V VGS = 0V VDS = 50V pF ƒ = 1.0MHz (See Fig.5) VGS = 0V, VDS = 0V to 160V (See Fig.11) VGS = 0V, VDS = 0V to 160V f f h g Diode Characteristics Symbol IS Parameter Continuous Source Current VSD trr (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ISM 2 c Min. Typ. Max. Units ––– ––– 24 A ––– ––– 100 Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 15A, VGS = 0V VR = 100V, TJ = 25°C TJ = 125°C IF = 15A di/dt = 100A/µs TJ = 25°C S f ––– ––– 1.3 V ––– 78 ––– ns ––– 99 ––– ––– 294 ––– nC TJ = 125°C ––– 432 ––– ––– 7.6 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f www.irf.com IRFR/U4620PbF 1000 1000 100 BOTTOM 10 1 5.0V 0.1 ≤60µs PULSE WIDTH Tj = 25°C 100 BOTTOM 10 5.0V 1 ≤60µs PULSE WIDTH Tj = 175°C 0.1 0.01 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 1000 3.5 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) TJ = 175°C T J = 25°C 10 1 VDS = 50V ≤60µs PULSE WIDTH 0.1 ID = 15A VGS = 10V 3.0 2.5 2.0 1.5 1.0 0.5 2 4 6 8 10 12 14 16 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 14.0 100000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 10000 C, Capacitance (pF) VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Ciss 1000 Coss 100 Crss ID= 15A 12.0 VDS= 160V VDS= 100V VDS= 40V 10.0 8.0 6.0 4.0 2.0 0.0 10 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage www.irf.com 0 5 10 15 20 25 30 35 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 IRFR/U4620PbF 1000 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 1msec 10 10msec DC 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 1.6 VSD, Source-to-Drain Voltage (V) ID, Drain Current (A) 25 20 15 10 5 0 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 30 50 T C , Case Temperature (°C) 260 Id = 5mA 250 240 230 220 210 200 190 -60 -40 -20 0 20 40 60 80 100120140160180 Fig 10. Drain-to-Source Breakdown Voltage 3.0 EAS , Single Pulse Avalanche Energy (mJ) 500 2.5 2.0 Energy (µJ) 1000 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature 1.5 1.0 0.5 0.0 -50 0 50 100 150 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 25 10 VDS, Drain-to-Source Voltage (V) 200 ID TOP 2.05A 2.94A BOTTOM 15A 450 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12. Maximum Avalanche Energy vs. DrainCurrent www.irf.com IRFR/U4620PbF Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 τJ 0.02 0.01 0.01 R1 R1 τJ τ1 R2 R2 τC τ2 τ1 Ci= τi/Ri Ci i/Ri 1E-005 0.0001 τ τi (sec) 0.000311 0.589 0.003759 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 τ2 Ri (°C/W) 0.456 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Tj = 150°C and Tstart =25°C (Single Pulse) 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 120 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 15A 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 6.0 90 5.5 80 5.0 70 4.5 IF = 10A V R = 100V TJ = 25°C TJ = 125°C 60 4.0 3.5 IRRM (A) VGS(th), Gate threshold Voltage (V) IRFR/U4620PbF ID = 100µA ID = 250uA ID = 1.0mA ID = 1.0A 3.0 2.5 2.0 50 40 30 20 10 1.5 0 1.0 -75 -50 -25 0 0 25 50 75 100 125 150 175 200 600 800 1000 diF /dt (A/µs) T J , Temperature ( °C ) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 2000 90 IF = 15A V R = 100V 80 70 IF = 10A V R = 100V 1800 1600 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 1400 QRR (A) 60 IRRM (A) 400 1200 50 1000 40 30 800 20 600 10 400 200 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig. 19 - Typical Stored Charge vs. dif/dt Fig. 18 - Typical Recovery Current vs. dif/dt 2000 IF = 15A V R = 100V 1800 1600 TJ = 25°C TJ = 125°C QRR (A) 1400 1200 1000 800 600 400 200 0 200 400 600 800 1000 diF /dt (A/µs) 6 Fig. 20 - Typical Stored Charge vs. dif/dt www.irf.com IRFR/U4620PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG VGS 20V + V - DD IAS A 0.01Ω tp I AS Fig 22a. Unclamped Inductive Test Circuit RD VDS Fig 22b. Unclamped Inductive Waveforms VDS 90% VGS D.U.T. RG + - VDD V10V GS 10% VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % td(on) Fig 23a. Switching Time Test Circuit tr t d(off) Fig 23b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50KΩ 12V tf .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 24a. Gate Charge Test Circuit www.irf.com Qgs1 Qgs2 Qgd Qgodr Fig 24b. Gate Charge Waveform 7 IRFR/U4620PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information (;$03/( 7+,6,6$1,5)5 3$57180%(5 :,7+$66(0%/< ,17(51$7,21$/ /27&2'( ,5)5 $ 5(&7,),(5 $66(0%/('21:: /2*2 ,17+($66(0%/

Irfr4620pbf Irfu4620pbf V 200v

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