Transcript
PD - 97105C
IRFS4321PbF IRFSL4321PbF Applications Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits l
Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA
HEXFET® Power MOSFET
VDSS RDS(on) typ. max. ID
150V 12m: 15m: 85A c D
D
G
D
G
D
S G
D
S
D2Pak TO-262 IRFS4321PbF IRFSL4321PbF
S
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings Symbol ID @ TC = 25°C
Parameter Continuous Drain Current, VGS @ 10V
Max.
Units
85 c
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
60
IDM
Pulsed Drain Current d
330
PD @TC = 25°C
Maximum Power Dissipation
350
W
Linear Derating Factor
2.3
Gate-to-Source Voltage Single Pulse Avalanche Energy e
±30
W/°C V
120
mJ
-55 to + 175
°C
VGS EAS (Thermally limited) TJ
Operating Junction and
TSTG
Storage Temperature Range 300
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case g
–––
0.43*
°C/W
RθJA
Junction-to-Ambient g
–––
40
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through
are on page 2
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1 12/9/10
IRFS_SL4321PbF Static @ TJ = 25°C (unless otherwise specified) Symbol
Parameter
V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
RG(int)
Min. Typ. Max. Units 150 ––– ––– 3.0 ––– ––– ––– ––– –––
––– 150 12 ––– ––– ––– ––– ––– 0.8
Conditions
––– V VGS = 0V, ID = 250μA ––– mV/°C Reference to 25°C, ID = 1mA 15 mΩ VGS = 10V, ID = 33A 5.0 V VDS = VGS, ID = 250μA 20 μA VDS = 150V, VGS = 0V 1.0 mA VDS = 150V, VGS = 0V, TJ = 125°C 100 nA VGS = 20V -100 VGS = -20V ––– Ω
f
d
Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter
Min. Typ. Max. Units
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
130 ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
––– 71 24 21 18 60 25 35 4460 390 82
––– 110 ––– ––– ––– ––– ––– ––– ––– ––– –––
S nC
ns
pF
Conditions VDS = 25V, ID = 50A ID = 50A VDS = 75V VGS = 10V VDD = 98V ID = 50A RG = 2.5Ω VGS = 10V VGS = 0V VDS = 50V ƒ = 1.0MHz
f f
Diode Characteristics Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
85
c
A
MOSFET symbol
ISM
(Body Diode) Pulsed Source Current
–––
–––
330
A
showing the integral reverse
VSD trr Qrr IRRM ton
(Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
d
G
p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V ––– 89 130 ns ID = 50A ––– 300 450 nC VR = 128V, ––– 6.5 ––– A di/dt = 100A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.096mH RG = 25Ω, IAS = 50A, VGS =10V. Part not recommended for use above this value.
2
D
f
S
f
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C
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IRFS_SL4321PbF 1000
1000
100 BOTTOM
10
1
5.0V
100 BOTTOM
5.0V
10
≤ 60μs PULSE WIDTH Tj = 175°C
≤ 60μs PULSE WIDTH Tj = 25°C 1
0.1 0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics 3.5
1000
TJ = 175°C 10
TJ = 25°C VDS = 25V ≤ 60μs PULSE WIDTH
0.1 3.0
4.0
5.0
6.0
7.0
8.0
VGS = 10V
3.0
2.5
(Normalized)
100
1
ID = 50A
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current(Α)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
2.0
1.5
1.0
0.5
9.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
7000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
5000
Ciss 4000 3000
Coss
2000 1000
Crss 10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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ID= 50A VDS = 120V
16
VDS= 75V VDS= 30V
12
8
4
0
0 1
20 40 60 80 100 120 140 160 180
Fig 4. Normalized On-Resistance vs. Temperature 20
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
6000
0
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
IRFS_SL4321PbF 1000 ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
100
TJ = 175°C 10
TJ = 25°C
1
OPERATION IN THIS AREA LIMITED BY R DS (on) 100μsec
100
1msec
10
10msec
1 Tc = 25°C Tj = 175°C Single Pulse
VGS = 0V 0.1
0.1 0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
VSD , Source-to-Drain Voltage (V)
ID , Drain Current (A)
70 60 50 40 30 20 10 0 50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage
LIMITED BY PACKAGE
25
1000
190
180
170
160
150
140 -60 -40 -20
TC , Case Temperature (°C)
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
5.0
EAS, Single Pulse Avalanche Energy (mJ)
500
4.0
Energy (μJ)
100
VDS , Drain-toSource Voltage (V)
90 80
10
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
3.0
2.0
1.0
0.0
ID 13A 20A BOTTOM 50A TOP
400
300
200
100
0
0
20
40
60
80
100
120
140
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
DC
160
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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IRFS_SL4321PbF
Thermal Response ( Z thJC )
1
D = 0.50 0.20
0.1
R1 R1
0.10 τJ
0.05 0.02
0.01
τJ τ1
R2 R2
R3 R3
τ2
τ1
τ3
τ2
Ci= τi/Ri Ci= τi/Ri
0.01
Ri (°C/W) τC
SINGLE PULSE ( THERMAL RESPONSE )
τ3
τ
τι (sec)
0.085239 0.000052 0.18817 0.00098 0.176912 0.008365
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse)
Duty Cycle = Single Pulse
Avalanche Current (A)
0.01 10
0.05 0.10
1
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C.
0.1 1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
120
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 50A
100
80
60
40
20
0 25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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IRFS_SL4321PbF 40
ID = 1.0A ID = 1.0mA ID = 250μA
5.0
30
4.0
IRRM - (A)
VGS(th), Gate threshold Voltage (V)
6.0
3.0
20
IF = 33A VR = 128V
10
2.0
TJ = 125°C TJ = 25°C
0
1.0 -75
-50 -25
0
25
50
75
100 200 300 400 500 600 700 800 900 1000
100 125 150 175
dif / dt - (A / μs)
TJ , Temperature ( °C )
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage Vs. Temperature 40
3200 2800 2400
QRR - (nC)
IRRM - (A)
30
20
10
0
2000 1600 1200
IF = 50A VR = 128V
IF = 33A VR = 128V
800
TJ = 125°C TJ = 25°C
TJ = 125°C TJ = 25°C
400 0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
dif / dt - (A / μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
3200 2800
QRR - (nC)
2400 2000 1600 1200 800 400 0
IF = 50A VR = 128V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
6
Fig. 20 - Typical Stored Charge vs. dif/dt
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IRFS_SL4321PbF D.U.T
Driver Gate Drive
-
-
-
*
D.U.T. ISD Waveform Reverse Recovery Current
+
RG
• • • •
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
P.W. Period VGS=10V
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+
D=
Period
P.W.
+
+ -
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
Body Diode
VDD
Forward Drop
Inductor Current Inductor Curent ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V
DRIVER
L
VDS
tp
D.U.T
RG
+ V - DD
IAS VGS 20V
tp
A
0.01Ω
I AS
Fig 22a. Unclamped Inductive Test Circuit LD
Fig 22b. Unclamped Inductive Waveforms
VDS
VDS
90%
+ VDD -
10%
D.U.T
VGS
VGS Pulse Width < 1μs Duty Factor < 0.1%
td(on)
Fig 23a. Switching Time Test Circuit
tr
td(off)
tf
Fig 23b. Switching Time Waveforms Id Vds Vgs
L DUT
0
1K
VCC Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
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Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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IRFS_SL4321PbF D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L"
INT ERNAT IONAL RECT IFIER LOGO
PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L
AS S EMBLY LOT CODE
T HIS IS AN IRF530S WIT H LOT CODE 8024 For GB Production AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L"
INT ERNAT IONAL RECT IFIER LOGO LOT CODE
8
PART NUMBER F530S DAT E CODE
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IRFS_SL4321PbF TO-262 Package Outline (Dimensions are shown in millimeters (inches))
TO-262 Part Marking Infor EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C"
INTERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE
PART NUMBER
DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C
OR INTERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE
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PART NUMBER
DAT E CODE P = DES IGNATES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE
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IRFS_SL4321PbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
FEED DIRECTION 1.85 (.073) 1.65 (.065)
1.60 (.063) 1.50 (.059)
11.60 (.457) 11.40 (.449)
0.368 (.0145) 0.342 (.0135)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL 10.90 (.429) 10.70 (.421)
1.75 (.069) 1.25 (.049)
4.72 (.136) 4.52 (.178)
16.10 (.634) 15.90 (.626)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941) 4
330.00 (14.173) MAX.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362) MIN.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/2010
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