Transcript
PD - 96411A
IRFTS9342PbF HEXFET® Power MOSFET VDS
-30
V
VGS max
±20
V
D
1
6
40
mΩ
D
2
5
D
66
mΩ
G
3
4
S
12
nC
-5.8
A
RDS(on) max (@VGS = -10V)
RDS(on) max (@VGS = -4.5V)
Qg typ ID (@TA= 25°C)
A D
TSOP-6
Top View
Applications l l
Battery operated DC motor inverter MOSFET System/Load Switch
Features and Benefits Features Industry-Standard TSOP-6 Package results in RoHS Compliant Containing no Lead, no Bromide and no Halogen ⇒ MSL1, Consumer Qualification
Orderable part number
Package Type
IRFTS9342TRPbF
TSOP-6
Benefits Multi-Vendor Compatibility Environmentally Friendlier Increased Reliability
Standard Pack Form Quantity Tape and Reel 3000
Note
Absolute Maximum Ratings Parameter
Max.
VDS
Drain-to-Source Voltage
-30
VGS
Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V
±20
ID @ TA = 25°C
-4.6
IDM
c
V
-5.8
Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
ID @ TA = 70°C
Units
A
-46
PD @TA = 25°C
Power Dissipation
2.0
PD @TA = 70°C
Power Dissipation
1.3
TJ
Linear Derating Factor Operating Junction and
TSTG
Storage Temperature Range
0.02 -55 to + 150
W W/°C °C
Notes through are on page 2
www.irf.com
1 02/29/12
IRFTS9342PbF Static @ TJ = 25°C (unless otherwise specified) Parameter
Min. Typ. Max. Units
Conditions
BVDSS ΔΒVDSS/ΔTJ
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
-30 –––
––– 19
––– –––
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) ΔVGS(th)
Gate Threshold Voltage
––– ––– -1.3
32 53 –––
40 66 -2.4
IDSS
Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
––– –––
-5.5 –––
IGSS
Gate-to-Source Forward Leakage
––– –––
––– ––– ––– ––– 12
V VDS = VGS, ID = -25μA ––– mV/°C -1.0 VDS = -24V, VGS = 0V μA -150 VDS = -24V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V ––– S VDS = -10V, ID = -4.6A ––– VDS = -15V
Gate-to-Source Reverse Leakage Forward Transconductance
V VGS = 0V, ID = -250μA mV/°C Reference to 25°C, ID = -1mA mΩ
Total Gate Charge
––– 6.8 –––
Qgs Qgd
Gate-to-Source Charge Gate-to-Drain Charge
––– –––
1.8 3.1
––– –––
nC
RG td(on) tr
Gate Resistance Turn-On Delay Time Rise Time
––– ––– –––
17 4.6 13
––– ––– –––
Ω
td(off) tf
Turn-Off Delay Time Fall Time
––– –––
45 28
––– –––
Ciss Coss
Input Capacitance Output Capacitance
––– –––
595 133
––– –––
Crss
Reverse Transfer Capacitance
–––
85
–––
gfs Qg
ns
pF
e e
VGS = -10V, ID = -5.8A VGS = -4.5V, ID = -4.6A
VGS = -10V ID = -4.6A VDD = -15V, VGS = -10V ID = -4.6A RG = 6.8Ω VGS = 0V VDS = -25V ƒ = 1.0KHz
Diode Characteristics Parameter IS
Continuous Source Current
ISM
(Body Diode) Pulsed Source Current
VSD
Min. Typ. Max. Units
Conditions MOSFET symbol
D
–––
–––
-2.0
(Body Diode) Diode Forward Voltage
–––
–––
-46
–––
–––
-1.2
V
p-n junction diode. TJ = 25°C, IS = -4.6A, VGS = 0V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
––– –––
20 11
30 17
ns nC
TJ = 25°C, IF = -4.6A, VDD = -24V di/dt = 100A/μs
ton
Forward Turn-On Time
A
c
showing the integral reverse
G
e
S
e
Time is dominated by parasitic Inductance
Thermal Resistance RθJA
Junction-to-Ambient
e
Parameter
Typ. –––
Max. 62.5
Units °C/W
Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
2
www.irf.com
IRFTS9342PbF 100
100
10 BOTTOM
1 -2.8V
≤60μs PULSE WIDTH
10 BOTTOM
-2.8V 1
≤60μs PULSE WIDTH Tj = 150°C
Tj = 25°C
0.1 0.1
1
10
0.1
100
0.1
-V DS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
100
1.6 RDS(on) , Drain-to-Source On Resistance (Normalized)
-I D, Drain-to-Source Current (A)
1
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T J = 150°C 1 T J = 25°C VDS = -15V ≤60μs PULSE WIDTH 0.1
ID = -5.8A
VGS = -10V
1.4
1.2
1.0
0.8
0.6 1
2
3
4
5
6
7
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics 10000
-V GS, Gate-to-Source Voltage (V)
C oss = C ds + C gd
Ciss Coss Crss
100
Fig 4. Normalized On-Resistance vs. Temperature 14.0
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
1000
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS -10V -7.0V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS -10V -7.0V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V
ID= -4.6A
12.0
VDS= -24V VDS= -15V
10.0
VDS= -6.0V
8.0 6.0 4.0 2.0 0.0
10 1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0
2
4
6
8
10
12
14
16
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRFTS9342PbF 100
1000
ID, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
T J = 150°C
10
T J = 25°C
1
100 100μsec
10
1msec 10msec
1
0.1
VGS = 0V 0.01
0.1 0.4
0.6
0.8
1.0
1.2
0.01
1.4
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
-V SD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
6 -V GS(th), Gate threshold Voltage (V)
3.0
5 -I D, Drain Current (A)
DC
Tc = 25°C Tj = 150°C Single Pulse
4 3 2 1 0 25
50
75
100
125
2.8 2.6 2.4 2.2 2.0 1.8
ID = -25μA ID = -250μA
1.6
ID = -1.0mA ID = -10mA ID = -1.0A
1.4 1.2 1.0
150
-75 -50 -25
T A , Ambient Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature 100 Thermal Response ( Z thJA ) °C/W
D = 0.50 10
0.20 0.10 0.05
1
0.02 0.01
0.1
0.01
0.001 1E-006
SINGLE PULSE ( THERMAL RESPONSE )
1E-005
0.0001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
100
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRFTS9342PbF ID = -5.8A 80
60 TJ = 125°C 40 T J = 25°C
20
0 2
4
6
8
10
12
14
16
18
220 200 180 160
Vgs = -4.5V
140 120 100 80 Vgs = -10V
60 40 20
20
0
10
-V GS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
50
90 80 70
80 60 40
60 50 40 30 20
20
10 0 0.0001
0 25
50
75
100
125
150
0.001
Fig 14. Maximum Avalanche Energy vs. Drain Current
D.U.T *
0.10
Driver Gate Drive
+
-
D=
D.U.T. ISD Waveform Reverse Recovery Current
V DD
+ -
Re-Applied Voltage
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Body Diode
www.irf.com
VDD
Forward Drop
InductorCurent Current Inductor Ripple ≤ 5%
Reverse Polarity of D.U.T for P-Channel
P.W. Period
*
+
di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
10
VGS=10V
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
• • • •
Period
P.W.
-
1
Fig 15. Typical Power vs. Time
+
RG
0.01
Time (sec)
Starting T J , Junction Temperature (°C)
*
40
100
ID TOP -0.91A -1.4A BOTTOM -4.6A
Power (W)
EAS , Single Pulse Avalanche Energy (mJ)
30
Fig 13. Typical On-Resistance vs. Drain Current
120 100
20
-I D, Drain Current (A)
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5
IRFTS9342PbF Id Vds Vgs
L VCC
DUT
0
20K 1K
Vgs(th)
SS
Qgodr
Fig 17a. Gate Charge Test Circuit
I AS
D.U.T
RG
IAS
-V GS -20V
tp
Qgs2 Qgs1
Fig 17b. Gate Charge Waveform
L
VDS
Qgd
VDD A
DRIVER 0.01Ω
tp V(BR)DSS 15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
V DS
RD td(on)
VGS RG
D.U.T.
-
+
t d(off)
tf
10% V DD
-V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 19a. Switching Time Test Circuit
6
tr
VGS
90% VDS
Fig 19b. Switching Time Waveforms
www.irf.com
IRFTS9342PbF TSOP-6 Package Outline
TSOP-6 Part Marking Information Y = YEAR W = WEE K
DATE CODE MARKING INSTRUCTIONS WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
PART NUMBER
YEAR
T OP
LOT CODE
PART NUMBE R CODE RE FE RE NCE: A = S I3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 F = IRF5801 G = IRF5803 H = IRF 5804 I = IRF 5805 J = IRF5806 K = IRF5810 N = IRF 5802
O= P= R= S =
IRL T S 6342T RPBF IRFT S 8342T RPBF IRFT S 9342T RPBF Not applicable
2011 2012 2013 2014 2015 2016 2017 2018 2019 2020
2001 2002 2003 2004 2005 2006 2007 2008 2009 2010
Y 1 2 3 4 5 6 7 8 9 0
W
01 02 03 04
A B C D
24 25 26
X Y Z
WW = (27-52) IF PRECEDED BY A LET T ER
T = IRLT S 2242T RPBF
Note: A line above the work week (as s hown here) indicates Lead-F ree.
WORK WEEK
YEAR 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020
2001 2002 2003 2004 2005 2006 2007 2008 2009 2010
Y A B C D E F G H J K
WORK WEEK
W
27 28 29 30
A B C D
50 51 52
X Y Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
7
IRFTS9342PbF TSOP-6 Tape and Reel Information
8mm
FEED DIRECTION
4mm
NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification information† Cons umer
Qualification level Moisture Sensitivity Level RoHS compliant
† ††
†††
(per JE DE C JE S D47F TSOP-6
††
†††
guidelines ) MS L1 †††
(per IPC/JE DE C J-S T D-020D Yes
)
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/2012
8
www.irf.com
