Irg4ph50kdpbf Short Circuit Rated Insulated Gate Bipolar Transistor With Ultrafast Igbt

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PD- 95189 IRG4PH50KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Lead-Free C VCES = 1200V VCE(on) typ. = 2.77V G @VGE = 15V, IC = 24A E n-ch an nel Benefits • Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces the IRGPH50KD2 and IRGPH50MD2 products • For hints see design tip 97003 TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 1200 45 24 90 90 16 90 10 ± 20 200 78 -55 to +150 V A µs V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– 0.24 ––– 6 (0.21) 0.64 0.83 ––– 40 ––– Units °C/W g (oz) 1 04/26/04 IRG4PH50KDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 1200 — Temperature Coeff. of Breakdown Voltage — 0.91 Collector-to-Emitter Saturation Voltage — 2.77 — 3.28 — 2.54 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -10 Forward Transconductance T 13 19 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 2.5 — 2.1 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 3.5 IC = 24A VGE = 15V — V IC = 45A See Fig. 2, 5 — IC = 24A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 24A 250 µA VGE = 0V, VCE = 1200V 6500 VGE = 0V, VCE = 1200V, TJ = 150°C 3.5 V IC = 16A See Fig. 13 3.0 IC = 16A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — 10 Typ. 180 25 70 87 100 140 200 3.83 1.90 5.73 — — — — — — — — — — — — — — — — — — 67 72 310 390 8.36 13 2800 140 53 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 270 IC = 24A 38 nC VCC = 400V See Fig.8 110 VGE = 15V — — TJ = 25°C ns 300 IC = 24A, VCC = 800V 300 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ and diode reverse recovery 7.9 See Fig. 9,10,18 — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 5.0Ω — TJ = 150°C, See Fig. 10,11,18 — IC = 24A, VCC = 800V ns — VGE = 15V, RG = 5.0Ω, — Energy losses include "tail" — mJ and diode reverse recovery — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 135 ns TJ = 25°C See Fig. 245 TJ = 125°C 14 IF = 16A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 VR = 200V 675 nC TJ = 25°C See Fig. 1838 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 www.irf.com IRG4PH50KDPbF 30 F o r b o th : LOAD CURRENT (A) 25 D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 40 W 20 S q u a re w a v e : 6 0% of rate d volta ge 15 I 10 Id e a l d io d e s 5 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 150 °C  10 TJ = 25 °C  V = 15V  20µs PULSE WIDTH GE 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) 100 TJ = 150 °C  10 TJ = 25 °C  V = 50V  5µs PULSE WIDTH CC 1 5 6 7 8 9 10 11 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PH50KDPbF 4.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 50 40 30 20 10 0 25 50 75 100 125 150 V = 15V  80 us PULSE WIDTH GE  IC = 48A 3.5 3.0  IC = 24A 2.5  IC = 12A 2.0 1.5 -60 -40 -20 TC , Case Temperature ( °C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01  SINGLE PULSE  (THERMAL RESPONSE) P DM t1 t2 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH50KDPbF C, Capacitance (pF) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 3000 Cies  2000 1000 0 Coes  Cres  1 10 20 VGE , Gate-to-Emitter Voltage (V)  4000 12 8 4 VCE , Collector-to-Emitter Voltage (V) 100  V CC = 800V 960V V GE = 15V TJ = 25 ° C I C = 24A 6.2 5.8 5.4 0 10 20 30 40 50 RG R, GGate Resistance , Gate Resistance(Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 80 120 160 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 6.6 0 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 7.0 VCC = 400V I C = 24A 16 0 100   5.0Ω RG = Ohm VGE = 15V 800V VCC = 960V  IC = 48 A  IC = 24 A 10  IC = 12 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PH50KDPbF 1000  = 5.0Ω Ohm = 150 °C = 800V 960V = 15V I C, Collector Current (A) 15 RG TJ VCC CC VGE 10 5 0  VGE = 20V T J = 125 oC 100 10 SAFE OPERATING AREA 0 10 20 30 40 1 50 1 I C , Collector Current (A) 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector Current 1000 Instantaneous Forward Current ( A ) Total Switching Losses (mJ) 20 100 T J = 150°C 10 T J = 125°C T J = 25°C 1 0.0 2.0 4.0 6.0 8.0 F orward V oltage D rop - V F M (V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com 300 40 IRG4PH50KDPbF VR = 200 V T J = 125°C T J = 25°C VR = 200V T J = 125°C T J = 25°C 30 200 I R R M - (A ) trr - (ns) IF = 3 2 A I F = 1 6A I F = 8 .0 A I F = 32A 20 I F = 16 A 100 I F = 8 .0A 10 0 100 d i f /dt - (A /µ s) 0 100 1000 1000 di f /dt - (A /µ s) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 1200 1000 VR = 2 00 V T J = 125°C T J = 25°C VR = 200V T J = 125°C T J = 25°C 900 600 d i(rec )M /d t - (A /µ s) Q R R - (nC ) I F = 3 2A I F = 16A I F = 8 .0A 100 I F = 32 A I F =1 6A I F = 8 .0 A 300 0 100 di f /d t - (A /µ s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 1000 10 100 1000 di f /d t - (A /µ s) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PH50KDPbF 90% Vge +Vge Same ty pe device as D .U.T. V ce Ic 9 0 % Ic 10% Vce Ic 5 % Ic 430µF 80% of Vce D .U .T. td (o ff) tf E o ff = ∫ t1 + 5 µ S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Ic Q rr = +Vg tx 10% Vcc D UT VO LTAG E AN D CU RRE NT Vce Vcc 1 0 % Ic Ip k 9 0 % Ic tr td (o n ) V pk 1 0 % Irr V cc Irr Ic D IO D E R E C O V E R Y W A V E FO R M S 5% Vce t1 t2 E o n = V ce ie d t t1 ∫ t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 trr id d t tx ∫ icdt t4 V d id d t t3 ∫ Vcicdt t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PH50KDPbF V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 0 - 480V 960V 4 X I C @25°C 50V 600 0µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4PH50KDPbF Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNAT IONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 AS SEMBLY LOT CODE 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/