Irg4rc10udpbf Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode N-channel

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PD - 95328 IRG4RC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for medium operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-252AA package • Lead-Free UltraFast CoPack IGBT C VCES = 600V VCE(on) typ. = 2.15V G @VGE = 15V, IC = 5.0A E tf (typ.) = 140ns n-channel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses D-PAK TO-252AA Absolute Maximum Ratings Parameter V CES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 8.5 5.0 34 34 4.0 16 ± 20 38 15 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient (PCB mount)* Weight Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– 0.3 (0.01) 3.3 7.0 50 ––– Units °C/W g (oz) Details of note  through „ are on the last page www.irf.com 1 6/2/04 IRG4RC10UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltageƒ 600 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 V CE(on) Collector-to-Emitter Saturation Voltage — 2.15 — 2.61 — 2.30 Gate Threshold Voltage 3.0 — VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -8.7 gfe Forward Transconductance „ 2.8 4.2 Zero Gate Voltage Collector Current — — ICES — — V FM Diode Forward Voltage Drop — 1.5 — 1.4 IGES Gate-to-Emitter Leakage Current — — V(BR)CES Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 2.6 IC = 5.0A VGE = 15V — V IC = 8.5A See Fig. 2, 5 — IC = 5.0A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 5.0A 250 µA VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC = 4.0A See Fig. 13 1.7 IC = 4.0A, TJ = 125°C ±100 n A VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 15 2.6 5.8 40 16 87 140 0.14 0.12 0.26 38 18 95 250 0.45 7.5 270 21 3.5 28 38 2.9 3.7 40 70 280 235 Max. Units Conditions 22 IC = 5.0A 4.0 nC VCC = 400V See Fig. 8 8.7 VGE = 15V — TJ = 25°C — ns IC = 5.0A, VCC = 480V 130 VGE = 15V, RG = 100Ω 210 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 0.33 — TJ = 150°C, See Fig. 11, 18 — ns IC = 5.0A, VCC = 480V — VGE = 15V, RG = 100Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 42 ns TJ = 25°C See Fig. 57 TJ = 125°C 14 IF = 4.0A 5.2 A TJ = 25°C See Fig. 6.7 TJ = 125°C 15 VR = 200V 60 nC TJ = 25°C See Fig. 105 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 www.irf.com IRG4RC10UDPbF 1.6 For both: Duty cycle: 50% TJ = 125°C 55°C Tsink = 90°C Gate drive as specified LOAD CURRENT (A) 1.2 Power Dissipation = 1.4 W Square wave: 0.8 60% of rated voltage I 0.4 Ideal diodes 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 oC 10 TJ = 150 oC 1 0.1 V GE = 15V 20µs PULSE WIDTH 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C, Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) 100 10 TJ = 150 o C TJ = 25 oC 1 V CC = 50V 5µs PULSE WIDTH 5 6 7 8 9 10 11 12 13 14 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4RC10UDPbF 5.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 10 8 6 4 2 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) VGE = 15V 80 us PULSE WIDTH IC = 10 A 4.0 3.0 IC = 5.05 A IC = 2.5 A 2.0 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC10UDPbF 500 VGE , Gate-to-Emitter Voltage (V) 400 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Cies 300 200 Coes 100 Cres 0 1 10 16 12 8 4 0 100 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 10 V CC = 480V V GE = 15V TJ = 25 ° C I C = 5.0A 50 60 70 80 90 , Gate Resistance(Ohm) (Ω) RG R, GGate Resistance Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 4 8 12 16 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.25 0.20 0 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.30 VCC = 400V I C = 5.0A 100 100 Ω RG = Ohm VGE = 15V VCC = 480V IC = 10 A 1 IC = 5.0A 5A IC = 2.5 A 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4RC10UDPbF RG TJ 1.2 VCC VGE 100 = 100Ω Ohm = 150° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 1.4 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 VGE = 20V T J = 125 oC 10 1 10 SAFE OPERATING AREA 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 100 TJ = 150°C 10 T = 125°C J T = 25°C J 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Forward Voltage Voltage Drop Drop -- VVFM ((V) V) FM Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4RC10UDPbF 50 14 I F = 8.0A 45 12 I F = 4.0A 10 I F = 8.0A I F = 4.0A Irr- ( A) trr- (nC) 40 VR = 200V TJ = 125°C TJ = 25°C 35 8 6 30 4 25 2 VR = 200V TJ = 125°C TJ = 25°C 20 100 di f /dt - (A/µs) 0 100 1000 di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 1000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 160 120 I F = 8.0A di (rec) M/dt- (A /µs) Qrr- (nC) I F = 8.0A I F = 4.0A 80 I F = 4.0A 40 0 100 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 1000 100 100 A di f /dt - (A/µs) 1000 Fig. 17 - Typical di(rec)M/dt vs. dif/dt, 7 IRG4RC10UDPbF 90% Vge Same type device as D.U.T. +Vge Vce 430µF 80% of Vce D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ∫ t1+5µS Vce icIcdtdt Vce t1 ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg trr Ic Qrr = tx DUT VOLTAGE AND CURRENT Vce 10% Ic 90% Ic tr td(on) 10% Irr Ipk Vpk Vcc Irr Ic DIODE RECOVERY WAVEFORMS 5% Vce t1 ∫ t2 VceieIcdt dt Eon = Vce t1 t2 DIODE REVERSE RECOVERY ENERGY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ +Vg 10% Vcc Vcc trr id Ic dtdt tx ∫ t4 Erec = Vd VdidIcdt dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4RC10UDPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) 1.14 (.045) 0.89 (.035) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 10.42 (.410) 9.40 (.370) 3 LEAD ASSIGNMENTS 1 - GATE 0.51 (.020) MIN. -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) 2 - DRAIN 3 - SOURCE 4 - DRAIN 0.58 (.023) 0.46 (.018) M A M B NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2.28 (.090) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4.57 (.180) 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). D-Pak (TO-252AA) Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" INTERNAT IONAL RECTIFIER LOGO PART NUMBER IRFR120 12 Note: "P" in assembly line position indicates "Lead-Free" AS SEMBLY LOT CODE 916A 34 DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFR120 P916A 12 AS S EMBLY LOT CODE www.irf.com 34 DATE CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = ASS EMBLY S ITE CODE 9 IRG4RC10UDPbF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ‚VCC=80%(VCES), VGE=20V, L=10µH, RG = 100Ω (figure 19) ƒPulse width ≤ 80µs; duty factor ≤ 0.1%. „Pulse width 5.0µs, single shot. D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 6/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/