Transcript
PD - 97113
IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features • • • • • • • • • •
Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package
IC = 10A, TC = 100°C G
tsc > 5µs, Tjmax = 175°C E
VCE(on) typ. = 1.6V
n-channel C
Benefits
• High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI
E G
C
TO-220AB
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings Parameter VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM IF@TC=25°C IF@TC=100°C IFM VGE PD @ TC =25° PD @ TC =100° TJ TSTG
Max.
Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current c
Units
600 20 10 40 40 20 10 40 ±20 ±30 101 50
Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current d Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 Screw
V
A
V W °C
-55 to + 175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt
1
Junction-to-Case - IGBT e Junction-to-Case - Diode e Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount e Weight
Min.
Typ.
Max.
Units
––– ––– ––– –––
––– ––– 0.50 ––– 1.44
1.49 3.66 ––– 62
°C/W g
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IRGB4064DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
Min. Typ. Max. Units
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
∆V(BR)CES/∆TJ
Temperature Coeff. of Breakdown Voltage
—
0.47
—
—
1.6
1.91
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.9
—
—
2.0
—
V
Conditions VGE = 0V, IC = 100µA
IC = 10A, VGE = 15V, TJ = 25°C V
5,6,7,9,
IC = 10A, VGE = 15V, TJ = 175°C
10 ,11
4.0
—
6.5
∆VGE(th)/∆TJ
Threshold Voltage temp. coefficient
—
-11
—
gfe
Forward Transconductance
—
6.9
—
S
VCE = 50V, IC = 10A, PW = 80µs
ICES
Collector-to-Emitter Leakage Current
—
—
25
µA
VGE = 0V, VCE = 600V
—
328
—
—
2.5
3.1
V
IF = 10A
—
1.7
—
—
—
±100
nA
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
V
IC = 10A, VGE = 15V, TJ = 150°C
Gate Threshold Voltage
Diode Forward Voltage Drop
CT6
V/°C VGE = 0V, IC = 500µA (-55°C-175°C)
VGE(th)
VFM
Ref.Fig
f
VCE = VGE, IC = 275µA
9,10,11,12
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
VGE = 0V, VCE = 600V, TJ = 175°C
8
IF = 10A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge (turn-on)
—
21
32
Qge
Gate-to-Emitter Charge (turn-on)
—
5.3
8.0
Qgc
Gate-to-Collector Charge (turn-on)
—
8.9
13
Conditions
Ref.Fig
IC = 10A nC
24
VGE = 15V
CT1
VCC = 400V
Eon
Turn-On Switching Loss
—
29
71
Eoff
Turn-Off Switching Loss
—
200
308
Etotal
Total Switching Loss
—
229
339
td(on)
Turn-On delay time
—
27
37
tr
Rise time
—
15
23
td(off)
Turn-Off delay time
—
79
90
tf
Fall time
—
21
30
Eon
Turn-On Switching Loss
—
99
—
Eoff
Turn-Off Switching Loss
—
316
—
Etotal
Total Switching Loss
—
415
—
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
—
27
—
IC = 10A, VCC = 400V, VGE = 15V
tr
Rise time
—
16
—
td(off)
Turn-Off delay time
—
98
— —
IC = 10A, VCC = 400V, VGE = 15V µJ
RG = 22Ω, L = 1.0mH, TJ = 25°C
CT4
Energy losses include tail & diode reverse recovery
IC = 10A, VCC = 400V, VGE = 15V ns
RG = 22Ω, L = 1.0mH, TJ = 25°C
CT4
IC = 10A, VCC = 400V, VGE = 15V
13,15
µJ
RG=22Ω, L=1.0mH, TJ = 175°C
CT4
ns
f
RG = 22Ω, L = 1.0mH, TJ = 175°C
WF1,WF2 14,16 CT4 WF1,WF2
tf
Fall time
—
33
Cies
Input Capacitance
—
594
—
Coes
Output Capacitance
—
49
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
17
—
f = 1.0Mhz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5
—
—
µs
VCC = 400V, Vp =600V
Erec
Reverse Recovery Energy of the Diode
—
191
—
µJ
TJ = 175°C
trr
Diode Reverse Recovery Time
—
62
—
ns
VCC = 400V, IF = 10A
20,21
Irr
Peak Reverse Recovery Current
—
16
—
A
VGE = 15V, Rg = 22Ω, L=1.0mH
WF3
pF
VGE = 0V
TJ = 175°C, IC = 40A VCC = 480V, Vp =600V
22
4 CT2
Rg = 22Ω, VGE = +15V to 0V Rg = 22Ω, VGE = +15V to 0V
22, CT3 WF4 17,18,19
Notes: VCC = 80% (VCES), VGE = 15V, L = 28 µH, RG = 22 Ω. Pulse width limited by max. junction temperature. Rθ is measured at TJ approximately 90°C Refer to AN-1086 for guidelines for measuring V(BR)CES safely
2
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24
120
20
100
16
80 Ptot (W)
IC (A)
IRGB4064DPbF
12
60
8
40
4
20
0
0 0
20
40
60
80 100 120 140 160 180
0
20
40
60
80 100 120 140 160 180
TC (°C)
TC (°C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
100
100
10µsec 100µsec
10
IC A)
IC (A)
1msec DC
10
1 Tc = 25°C Tj = 175°C Single Pulse 1
0.1 1
10
100
10
1000
100
VCE (V)
VCE (V)
Fig. 4 - Reverse Bias SOA TJ = 175°C; VCE = 15V
Fig. 3 - Forward SOA, TC = 25°C; TJ ≤ 175°C 40
VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
20
10
VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
20
10
0
0 0
2
4
6
8
10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs
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VGE = 18V
30
ICE (A)
ICE (A)
40
VGE = 18V
30
1000
0
2
4
6
8
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs
3
IRGB4064DPbF 40
80 VGE = 18V
VGE = 12V
60
VGE = 8.0V
50
VGE = 10V
IF (A)
ICE (A)
30
-40°C 25°C 175°C
70
VGE = 15V
20
40 30
10
20 10
0
0 0
2
4
6
8
10
0.0
1.0
2.0
3.0
VCE (V)
20
18
18
16
16
ICE = 5.0A VCE (V)
VCE (V)
ICE = 20A
8
ICE = 10A
12
ICE = 20A
10 8
6
6
4
4
2
2 0
0 5
10
15
5
20
10
15
20
VGE (V)
VGE (V)
Fig. 9 - Typical VCE vs. VGE TJ = -40°C
Fig. 10 - Typical VCE vs. VGE TJ = 25°C
20
40
18 16
TJ = 25°C TJ = 175°C
30
ICE = 5.0A
14
ICE = 10A
12
ICE = 20A
10
ICE (A)
VCE (V)
7.0
ICE = 5.0A
14
ICE = 10A
10
6.0
Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs
20
12
5.0
VF (V)
Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs
14
4.0
8 6
20
10
4 2 0
0 5
10
15 VGE (V)
Fig. 11 - Typical VCE vs. VGE TJ = 175°C
4
20
0
5
10
15
20
VGE (V)
Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs
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IRGB4064DPbF 1000
600
Swiching Time (ns)
500
Energy (µJ)
400 EOFF
300 200
tdOFF
100
tF tdON tR
10
EON
100 0 0
4
8
12
16
20
1
24
0
4
8
12
I C (A)
20
24
IC (A)
Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L=1mH; VCE= 400V RG= 22Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 1mH; VCE = 400V, RG = 22Ω; VGE = 15V. 350
1000
EOFF
300
16
Swiching Time (ns)
Energy (µJ)
250
EON
200 150 100
tdOFF
100
tdON tF
50
tR
0 0
25
50
75
100
10
125
0
25
50
RG (Ω)
125
Fig. 16- Typ. Switching Time vs. RG TJ = 175°C; L=1mH; VCE= 400V ICE= 10A; VGE= 15V
24
20
20
16
RG =10 Ω
16
RG =22 Ω
12
IRR (A)
IRR (A)
100
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 1mH; VCE = 400V, ICE = 10A; VGE = 15V
RG =47 Ω
8
12
8
RG = 100 Ω 4
4
0
0 0
4
8
12
16
20
IF (A)
Fig. 17 - Typical Diode IRR vs. IF TJ = 175°C
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75
24
0
25
50
75
100
125
RG (Ω)
Fig. 18 - Typical Diode IRR vs. RG TJ = 175°C; IF = 10A
5
IRGB4064DPbF 20
900
10Ω
20A
22Ω
800 47 Ω 15 IRR (A)
QRR (nC)
700
10
100Ω 10A
600 500 5.0A 400
5
300 0
200
400
600
800
1000
1200
0
500
diF /dt (A/µs)
1500
Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 10A; TJ = 175°C
80
16
300 RG = 10Ω RG = 22Ω
150
RG = 47Ω
100 RG = 100Ω 50
70
Isc
12
60
10
50
8
40
6
30
4
20
2
10 0
0
0 0
2
4
6
8
8 10 12 14 16 18 20 22
Current (A)
200
Tsc
14
Time (µs)
250
IRR (A)
1000
diF /dt (A/µs)
10
12
14
16
VGE (V)
IF (A)
Fig. 22- Typ. VGE vs Short Circuit Time VCC=400V, TC =25°C
Fig. 21 - Typical Diode ERR vs. IF TJ = 175°C 1000
16 Cies
14
300V
400V
100
VGE (V)
Capacitance (pF)
12
Coes
10 8 6
10
Cres
4 2 0
1 0
20
40
60
VCE (V)
80
Fig. 23- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
6
100
0
4
8
12
16
20
24
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE ICE = 10A, L=600µH
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IRGB4064DPbF
Thermal Response ( Z thJC )
10
1
D = 0.50 0.20
τJ
0.10 0.1
0.05
τJ τ1
R2 R2
R3 R3
R4 R4 τC
τ2
τ1
τ3
τ2
τ4
τ3
τ
τ4
Ci= τi/Ri Ci i/Ri
0.02 0.01
R1 R1
Ri (°C/W) τι (sec) 0.007362 0 0.342317 0.000048 0.647826 0.000192 0.493231 0.001461
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE ( THERMAL RESPONSE )
0.01 1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10
Thermal Response ( Z thJC )
D = 0.50 1
0.20 0.10 0.05
0.1
0.02
τJ
0.01
R1 R1 τJ τ1
τ1
Ci= τi/Ri
0.01
R2 R2 τ2
τC τ τ2
Ri (°C/W)
τι (sec)
1.939783 0.000975 1.721867 0.006135
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGB4064DPbF L
L DUT
0
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.5 - Resistive Load Circuit
8
VCC
80 V
+ -
DUT Rg
480V
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.6 - Typical Filter Circuit for V(BR)CES Measurement
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IRGB4064DPbF 500
10 TEST CURRENT
tf
25
350
8
tr 275
90% ICE
4
VCE (V)
200
ICE (A)
6
VCE (V)
200
15
125
10
5% ICE
100
10% test current
2 5% VCE Eoff Loss
0 -0.04
0
0.06
-25 -0.1
0.16
time(µs)
Eon Loss 0.1
110
QRR tRR
5
90
0
70
450
VC E
Vce (V)
Peak IRR
IF (A)
VF (V)
-5
375 300
-175 -250
0
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4
10
-100
5
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4
-25
5% VCE
50
IC
50
225
-10
30
150
-400
-15
10
75
-475 -0.05
-20
-10
0
-325
0.15
10% Peak IRR
0.35
time (µS) WF.3- Typ. Reverse Recovery Waveform @ TJ = 175°C using CT.4
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-5
0
5
Ice (A)
300
20
90% test current
ICE (A)
400
10
Time (uS) WF.4- Typ. Short Circuit Waveform @ TJ = 25°C using CT.3
9
IRGB4064DPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN THE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead - Free"
PART NUMBER
INT ERNATIONAL RECTIFIER LOGO
DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C
AS S EMBLY LOT CODE
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/06
10
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
