Transcript
IRGP4760DPbF IRGP4760D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V
C
IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C
G
C
VCE(ON) typ. = 1.7V @ IC = 48A
G IRGP4760DPbF TO‐247AC
E
n-channel Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding
E
G Gate
C Collector
Features
C
G IRGP4760D‐EPbF TO‐247AD E Emitter
Benefits
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient
High Efficiency in a Wide Range of Applications
Lead-Free, RoHs compliant
Environmentally friendly
Base part number
Package Type
IRGP4760DPbF IRGP4760D-EPbF
TO-247AC TO-247AD
E
Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation
Standard Pack Form Quantity Tube 25 Tube 25
Orderable Part Number IRGP4760DPbF IRGP4760D-EPbF
Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Max. 650 90 60 144 192 74 45 192 ±20 325 160 -40 to +175
Units V
A
V W
300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
C
Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1
Parameter Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
www.irf.com
© 2014 International Rectifier
Min. ––– ––– ––– –––
Submit Datasheet Feedback
Typ. ––– ––– 0.24 –––
Max. 0.46 0.97 ––– 40
Units °C/W
November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage
Min. 650 —
Typ. — 0.69
— 1.7 — 2.1 Gate Threshold Voltage 5.5 — VGE(th) Threshold Voltage Temperature Coeff. — -23 VGE(th)/TJ gfe Forward Transconductance — 31 — 1.0 ICES Collector-to-Emitter Leakage Current — 890 Gate-to-Emitter Leakage Current — — IGES — 1.9 Diode Forward Voltage Drop VF — 1.4 Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Max. — —
2.0 V IC = 48A, VGE = 15V, TJ = 25°C — IC = 48A, VGE = 15V, TJ = 175°C 7.4 V VCE = VGE, IC = 1.4mA — mV/°C VCE = VGE, IC = 1.4mA (25°C-150°C) — S VCE = 50V, IC = 48A, PW = 20µs 35 µA VGE = 0V, VCE = 650V — VGE = 0V, VCE = 650V, TJ = 175°C ±100 nA VGE = ±20V 2.5 V IF = 48A — IF = 48A, TJ = 175°C
VCE(on)
Collector-to-Emitter Saturation Voltage
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon
Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss
Eoff Etotal td(on) tr td(off) tf Cies Coes Cres
Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
5.5
—
—
Erec trr Irr
Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
— — —
370 170 25
— — —
Min. — — — — — — — — — — —
Typ. 96 30 40 1.7 1.0 2.7 70 60 140 30 2.9
— — — — — — — — —
1.4 4.3 55 60 145 65 2935 235 84
Units Conditions V VGE = 0V, IC = 100µA V/°C VGE = 0V, IC = 3mA (25°C-175°C)
Max Units Conditions 145 IC = 48A 45 nC VGE = 15V VCC = 400V 60 2.6 1.9 mJ IC = 48A, VCC = 400V, VGE=15V 4.5 RG = 10, L = 210µH, TJ = 25°C 90 Energy losses include tail & diode 80 ns reverse recovery 160 50 — — — — — — — — — —
FULL SQUARE
mJ
ns
IC = 48A, VCC = 400V, VGE=15V RG = 10, L = 210µH, TJ = 175°C Energy losses include tail & diode reverse recovery
VGE = 0V pF VCC = 30V f = 1.0MHz TJ = 175°C, IC = 192A VCC = 520V, Vp ≤ 650V VGE = +20V to 0V TJ = 150°C,VCC = 400V, Vp ≤ 650V µs V = +15V to 0V GE µJ ns A
TJ = 175°C VCC = 400V, IF = 48A VGE = 15V, Rg = 10
Notes:
VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement.
2
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF
100
For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 163W
90
Load Current ( A )
80 70 60
Square Wave: VCC
50 40
I
30 Diode as specified
20 10 0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100
350 300
80
250 IC (A)
Ptot (W)
60
40
200 150 100
20
50 0
0 25
50
75
100
125
150
175
25
TC (°C)
50
75
100
125
150
175
TC (°C)
Fig. 3 - Power Dissipation vs. Case Temperature
Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000
1000
100
10
100 IC (A)
IC (A)
10µsec
100µsec
10 1
1msec
Tc = 25°C Tj = 175°C Single Pulse
DC 1
0.1 1
10
100
1000
10000
VCE (V)
Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 3
www.irf.com
© 2014 International Rectifier
10
100
1000
VCE (V)
Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V Submit Datasheet Feedback
November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF
200
200
VGE = 18V
VGE = 15V
VGE = 15V
VGE = 12V
VGE = 12V
150
VGE = 10V
VGE = 10V
VGE = 8.0V
VGE = 8.0V
ICE (A)
150
ICE (A)
VGE = 18V
100
100
50
50
0
0 0
2
4
6
8
0
10
2
4
6
8
10
V CE (V)
V CE (V)
Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs
Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs
200
200
VGE = 18V VGE = 15V VGE = 12V
150
150
VGE = 8.0V
IF (A)
ICE (A)
VGE = 10V 100
100
50
-40°C 25°C 175°C
50
0
0
0
2
4
6
8
10
0
1
2
V CE (V)
12
12
10
10 ICE = 24A ICE = 48A
8
ICE = 24A ICE = 48A
8
ICE = 96A
V CE (V)
V CE (V)
4
Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics
Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs
6
ICE = 96A 6
4
4
2
2
0
0 5
10
15
20
V GE (V)
Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4
3
V F (V)
www.irf.com
© 2014 International Rectifier
5
10
15
20
V GE (V)
Fig. 11 - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback
November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF
12
200
10 ICE = 24A ICE = 48A ICE = 96A
ICE (A)
V CE (V)
8
TJ = 25°C TJ = 175°C
150
6
100
4
50 2 0
0 5
10
15
20
4
6
8
10
12
14
V GE (V)
V GE (V)
Fig. 12 - Typical VCE vs. VGE TJ = 175°C
Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs
10
1000
9
Energy (mJ)
7
Swiching Time (ns)
8 EON
6 5 4 3 2
tdOFF 100
tF tdON tR
EOFF
1 0
10
0 10 20 30 40 50 60 70 80 90 100 110
0
10 20 30 40 50 60 70 80 90 100 IC (A)
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
8
10000
7 6
1000
Swiching Time (ns)
EON
Energy (mJ)
5 4 3 EOFF
2
tdOFF
tdON
tR
100
tF
10
1 0
1
0
20
40
60
80
100
120
0
20
40
60
80
100
RG ()
RG ()
Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
5
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF
30
30 RG = 5 25 RG = 10
20
IRR (A)
IRR (A)
25
RG = 47
15
RG = 100
10
20
15
10
5
5 20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
IF (A)
RG (
Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C
30
3000 96A 10
2600
20
QRR (nC)
IRR (A)
25
15
48A 22
2200
1800
100
10
1400
5 200
250
300
350
400
450
0
500
200
600
800
1000
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 20
240
RG = 10
Tsc
Isc
16
250
150
Time (µs)
RG = 22
200
RG = 47
100 RG = 100 30
40
50
60
70
80
90
100
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C www.irf.com
12
160
8
120
4
80
0
50 20
200
© 2014 International Rectifier
Current (A)
Energy (µJ)
400
diF /dt (A/µs)
300
6
24A
47
40 8
10
12
14
16
18
VGE (V)
Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C Submit Datasheet Feedback
November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF
16
V GE, Gate-to-Emitter Voltage (V)
10000
Capacitance (pF)
Cies 1000
Coes
100
Cres
14
V CES = 400V
12
V CES = 300V
10 8 6 4 2 0
10 0
100
200
300
400
500
0
600
20
40
60
80
100
Q G, Total Gate Charge (nC)
V CE (V)
Fig. 25 - Typical Gate Charge vs. VGE ICE = 48A
Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1
Thermal Response ( Z thJC )
D = 0.50 0.1
0.20 0.10 0.05
0.01
J
0.02 0.01
R1 R1 J 1
R2 R2
R3 R3
Ri (°C/W) C
2
1
3
2
3
Ci= iRi Ci= iRi
0.001 SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006
1E-005
i (sec)
C0.131857
0.000301
0.190293
0.003726
0.137850
0.021183
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1 D = 0.50 0.20 0.1
0.10 0.05 0.02
J
0.01
0.01
R1 R1 J 1
R2 R2
R3 R3
R4 R4 C
2
1
2
3
4
3
4
Ci= iRi Ci= iRi
0.001
1E-005
0.0001
i (sec)
0.034171
0.000075
0.322392
0.000444
0.378848
0.005103
0.236223
0.032691
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006
C
Ri (°C/W)
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF
L
L VCC
DUT
0
80 V +
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp / DUT L
4X DC
VCC
-5V DUT / DRIVER
DUT
VCC
Rg
RSH Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC ICM
100K D1
22K C sense
DUT
VCC
DUT
G force
0.0075µF
Rg E sense
E force
Fig.C.T.5 - Resistive Load Circuit 8
www.irf.com
© 2014 International Rectifier
Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback
November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF 600
500
100
500
400
80
400
60
300
300
ICE (A)
90% ICE
200
40
100 TEST CURRENT
40
200 90% ICE
100
20
100
20 10% ICE
10%ICE
0 Eoff Loss
-100 0
-20
0.5
1
10% VCE
0
0
0
Eon Loss
-100 4.25
4.75
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4
60 50
QRR tRR
Vce (V)
20
IF (A)
600
600
500
500
VCE
400
30
10
300
200
200
ICE
100 Peak IRR
-0.10
0.10
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4
9
www.irf.com
100 0
0
-20 -30 -0.30
400
300
0 -10
-20
5.25
time (µs)
time(µs)
40
80 60
10% VCE
-0.5
120
tr
© 2014 International Rectifier
Ice (A)
VCE (V)
tf
VCE (V)
120
600
ICE (A)
-100
-100 2
4
6
8
10
time (µs)
Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3
Submit Datasheet Feedback
November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free"
INTERNATIONAL RECTIFIER LOGO
PART NUMBER IRFPE30 56
135H 57
ASSEMBLY LOT CODE
DATE CODE YEAR 1 = 2001 WEEK 35 LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF
TO-247AD Package Outline Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e "
PART N U M BER
IN T E R N A T IO N A L R E C T IF IE R LO G O 56
035H 57
ASSEM B LY LO T C O D E
D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H
TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF
Qualification Information† Industrial
Qualification Level TO-247AC
Moisture Sensitivity Level
(per JEDEC JESD47F) †† N/A
TO-247AD
N/A Yes
RoHS Compliant †
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History Date
Comments
8/21/2014
Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3.
11/12/2014
Added IFM Diode Maximum Forward Current = 192A with the note on page 1. Removed note from switching losses test condition on page 2.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
12
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 12, 2014
