Transcript
PD-91332F
IRHM7260 JANSR2N7433 200V, N-CHANNEL
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
REF: MIL-PRF-19500/663 ® RAD-Hard HEXFET TECHNOLOGY ™
Product Summary Part Number Radiation Level IRHM7260 100K Rads (Si) IRHM3260 300K Rads (Si) IRHM4260 500K Rads (Si) IRHM8260 1000K Rads (Si)
RDS(on) 0.070Ω 0.070Ω 0.070Ω 0.070Ω
ID QPL Part Number 35A* JANSR2N7433 35A* JANSF2N7433 35A* JANSG2N7433 35A* JANSH2N7433
International Rectifier’s RAD-Hard TM HEXFET ® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-254AA
Features: n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight
Units 35* 25 140 250 2.0 ±20 500 35 25 5.7 -55 to 150
A W W/°C
V mJ A mJ V/ns o
300 (0.063 in.(1.6mm) from case for 10s) 9.3 (Typical)
C
g
*Current is limited by package For footnotes refer to the last page
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1 08/09/07
IRHM7260, JANSR2N7433
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.26
—
V/°C
— — 2.0 9.0 — —
— — — — — —
0.070 0.077 4.0 — 25 250
Ω
— — — — — — — — — —
— — — — — — — — — 6.8
100 -100 290 42 120 50 200 200 130 —
∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Typ Max Units
V S µA
nA nC
ns
nH
Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 25A Ã VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS ≥ 15V, IDS = 25A Ã VDS= 160V ,VGS = 0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =35A VDS = 100V VDD = 100V, ID =35A VGS =12V, RG = 2.35Ω
Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
5300 1200 360
— — —
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics Parameter
Min Typ Max Units
IS ISM VSD trr Q RR
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
ton
Forward Turn-On Time
— — — — —
— — — — —
35* 140 1.8 820 8.5
Test Conditions
A V ns µC
Tj = 25°C, IS = 35A, VGS = 0V Ã Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current limited by package
Thermal Resistance Parameter RthJC RthJA RthCS
Junction-to-Case Junction-to-Ambient Case-to-Sink
Min Typ Max Units — — —
— 0.50 — 48 0.21 —
°C/W
Test Conditions Typical socket mount
Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHM7260, JANSR2N7433
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD
100 K Rads(Si)1
Min
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Ã
Diode Forward Voltage
200 2.0 — — — — —
Max
300K-1000K Rads (Si)2
Min
Units
Max
— 4.0 100 -100 25 0.070
200 1.25 — — — —
— 4.5 100 -100 25 0.11
1.8
—
1.8
Test Conditions
µA Ω
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS = 160V, VGS = 0V VGS = 12V, ID = 25A
V
VGS = 0V, IS = 35A
V nA
1. Part number IRHM7260 (JANSR2N7433) 2. Part numbers IRHM3260 (JANSF2N7433), IRHM4260 (JANSG2N7432) and IRHM8260 (JANSH2N7433)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area Ion Cu Br
LET (MeV/(mg/cm2)) 28 36.8
Energy (MeV) 285 305
Range (µm) 43 39
VDS(V) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 190 180 170 125 — 100 100 100 50 —
200
VDS
150 Cu
100
Br
50 0 0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page
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IRHM7260, JANSR2N7433
1000
Pre-Irradiation
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
5.0V
20µs PULSE WIDTH TJ = 25 °C
5.0V 1
10
100
100
10
VDS , Drain-to-Source Voltage (V)
2.5
TJ = 150 ° C
V DS = 50V 20µs PULSE WIDTH 6
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
5
100
Fig 2. Typical Output Characteristics
1000
100
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
1
20µs PULSE WIDTH TJ = 150 °C
12
40A ID = 35A
2.0
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = 12V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
10000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
8000
C, Capacitance (pF)
IRHM7260, JANSR2N7433
Ciss 6000
4000
Coss
2000
Crss
0
1
10
ID = 35A
16
12
8
4
FOR TEST CIRCUIT SEE FIGURE 13
0
100
0
40
VDS , Drain-to-Source Voltage (V)
80
120
160
200
240
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
VDS = 160V VDS = 100V VDS = 40V
100
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
TJ = 150 ° C 10
TJ = 25 ° C
1
0.1 0.0
V GS = 0 V 0.5
1.0
1.5
2.0
2.5
3.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
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3.5
100µs 1ms
10
10ms
Tc = 25°C Tj = 150°C Single Pulse
1 1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHM7260, JANSR2N7433
Pre-Irradiation
50
LIMITED BY PACKAGE V GS
40
ID , Drain Current (A)
RD
VDS
D.U.T.
RG
30
+
- VDD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit 10
VDS 90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C) 10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
0.50
0.1
0.01
0.20 0.10 0.05 0.02 0.01
0.001 0.00001
PDM
SINGLE PULSE (THERMAL RESPONSE)
t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7260, JANSR2N7433
EAS , Single Pulse Avalanche Energy (mJ)
1400
TOP
1200
15V
BOTTOM
ID 16A 22A 35A
1000
L
VDS
D.U.T
RG
VGS 20V
IAS
DRIVER
+ - VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
800 600 400 200 0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS Current Regulator Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.2µF .3µF
D.U.T.
QGD
+ V - DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRHM7260, JANSR2N7433
Pre-Irradiation
Foot Notes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by maximum junction temperature.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with V DS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Á VDD = 50V, starting TJ = 25°C, L=0.82mH Peak IL = 35A, VGS =12V
 ISD ≤ 35A, di/dt ≤ 410A/µs, VDD ≤ 200V, TJ ≤ 150°C
Case Outline and Dimensions — TO-254AA 0.12 [.005]
13.84 [.545] 13.59 [.535]
3.78 [.149] 3.53 [.139]
6.60 [.260] 6.32 [.249]
A
20.32 [.800] 20.07 [.790]
17.40 [.685] 16.89 [.665] 1
C
2
2X
14.48 [.570] 12.95 [.510]
0.84 [.033] MAX.
1.14 [.045] 0.89 [.035] 0.36 [.014]
3.81 [.150] B A
NOT ES :
1. 2. 3. 4.
B
3
3X
3.81 [.150]
13.84 [.545] 13.59 [.535]
1.27 [.050] 1.02 [.040]
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/2007
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