Transcript
PD - 91375B
IRL2910 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l
D
l
VDSS = 100V RDS(on) = 0.026Ω
G
ID = 55A S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current
Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
55 39 190 200 1.3 ± 16 520 29 20 5.0 -55 to + 175
Units A W W/°C V mJ A mJ V/ns °C
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Thermal Resistance Parameter RθJC RθCS RθJA
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
Max.
Units
––– 0.50 –––
0.75 ––– 62
°C/W °C/W °C/W 5/13/98
IRL2910 Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
IGSS
Min. 100 ––– ––– ––– ––– 1.0 28 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 100 49 55
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.026 VGS = 10V, ID = 29A 0.030 Ω VGS = 5.0V, ID = 29A 0.040 VGS = 4.0V, ID = 24A 2.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 29A 25 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 140 ID = 29A 20 nC VDS = 80V 81 VGS = 5.0V, See Fig. 6 and 13 ––– VDD = 50V ––– ID = 29A ns ––– RG = 1.4Ω, VGS = 5.0V ––– RD = 1.7Ω, See Fig. 10 Between lead, ––– 4.5 ––– 6mm (0.25in.) nH from package G ––– 7.5 ––– and center of die contact ––– 3700 ––– VGS = 0V ––– 630 ––– pF VDS = 25V ––– 330 ––– ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics IS ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 55 showing the A G integral reverse ––– ––– 190 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V ––– 240 350 ns TJ = 25°C, IF = 29A ––– 1.8 2.7 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 1.2mH RG = 25Ω, IAS = 29A. (See Figure 12)
ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRL2910 1000
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
100
10
2.5 V 2 0µ s P U LS E W ID TH T J = 2 5°C
1 0.1
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
ID , Drain-to-Source Current (A )
ID , Drain-to-Source Current (A )
TOP
1
10
100
10
2.5 V
2 0µ s P U LS E W ID TH T J = 1 75 °C
1
A
100
0.1
1
V D S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
3.0
R D S (on) , Drain-to-S ource O n Resistance (N orm alized)
I D , D ra in -to-S ourc e C urrent (A)
1000
TJ = 2 5 °C TJ = 1 7 5 °C
10
V DS = 50V 2 0 µ s P U L S E W ID T H
1 2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
A
100
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
100
10
6.0
V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
A
I D = 4 8A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0 -60
-40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance Vs. Temperature
IRL2910 V GS C iss C rs s C iss C o ss
C , Capacitance (pF)
5000
= = = =
15
0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d
V G S , G ate-to-S ource V oltage (V )
6000
4000
3000
C o ss 2000
C rss 1000
0
A 1
10
I D = 29 A V D S = 8 0V V D S = 5 0V V D S = 2 0V
12
9
6
3
FO R TE S T C IRC UIT S E E FIG U R E 1 3
0
100
0
V D S , D rain-to-S ourc e V oltage (V )
80
120
160
A
200
Q G , T otal G ate C harge (nC )
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
1000
O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n)
I D , Drain C urrent (A )
I S D , R everse Drain C urrent (A )
40
100
T J = 1 75 °C T J = 25 °C
10µ s
100
100µ s
10
1m s
10m s
V G S = 0V
10 0.4
0.8
1.2
1.6
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
A
2.0
T C = 25 °C T J = 17 5°C S ing le P u lse
1 1
10
100
A
1000
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
IRL2910 60
RD
VDS VGS
I D , Drain Current (A)
50
D.U.T.
RG
+
-VDD
40
5.0V 30
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25
50
75
100
125
150
175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20 0.1
0.01 0.00001
0.10 PDM
0.05
t1 0.02 0.01
t2
SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRL2910
1 5V
L
VDS
D R IV E R
D .U .T
RG
+ V - DD
IA S 20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
E A S , S ingle P ulse A valanche E nergy (m J)
1400
TO P 1200
B O TTO M
ID 12 A 2 0A 29 A
1000
800
600
400
200
0
V D D = 25 V 25
50
A 75
100
125
150
175
S tarting T J , J unc tion T em perature (°C )
V (B R )D SS tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50KΩ
QG
12V
.2µF .3µF
5.0 V QGS
D.U.T.
QGD
+ V - DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRL2910 Peak Diode Recovery dv/dt Test Circuit +
D.U.T
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+
-
-
+
• • • •
RG
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
Driver Gate Drive D=
Period
P.W.
+ -
VDD
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
Body Diode
VDD
Forward Drop
Inductor Curent Ripple ≤ 5%
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
ISD
*
IRL2910 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.113 ) 2.62 (.103 )
10.54 (.415 ) 10.29 (.405 )
3.78 (.149) 3.54 (.139) -A-
-B4.69 (.1 85) 4.20 (.1 65)
1.3 2 (.052) 1.2 2 (.048)
6.47 (.255 ) 6.10 (.240 )
4 15.24 (.600 ) 14.84 (.584 )
1.15 (.0 45) MIN 1
2
14 .09 (.55 5) 13 .47 (.53 0)
4 .06 (.16 0) 3 .55 (.14 0)
3X 3X
L EA D A S SIG N ME NT S 1 - G AT E 2 - D RA IN 3 - S OU R C E 4 - D RA IN
3
1 .40 (.05 5) 1 .15 (.04 5)
0.93 (.037 ) 0.69 (.027 )
0.36 (.01 4)
3X M
B A M
2 .54 (.10 0) 2X N O TE S: 1 D IM EN S IO N ING & TOL ER A NC IN G P ER A N SI Y 14 .5 M, 19 82. 2 C O N TRO LLIN G D IME N S IO N : INC H
0.55 (.02 2) 0.46 (.01 8)
2 .9 2 (.11 5) 2 .6 4 (.10 4)
3 O U TLIN E C ON F OR MS TO JE DE C O UT LIN E TO -2 20A B . 4 HE A TS INK & LE AD M E AS U RE M E NTS D O N O T IN CL UD E B UR R S.
Part Marking Information TO-220AB E XEAXMAPML PE L:E TH IS ISIS ISA NA NIR FIR1 F1 01010 : TH W ITH A SASSESMEBML BY L Y W IT H L OLTO C T OCDOED E9 B 91M B1M
A A
IN TE R NRANTAIOTIO N ANL A L IN TE R ERCETIFIE R C TIF IE R IR FIR1 F0 10 1 0 L OLGOOG O 9 2 49 62 4 6 9B 9B 1 M1 M A SASSESMEBML BY L Y L OT L O T C OCDOED E
P APRATR N T UNMUBMEBRE R
D ADTE A TEC OCDOED E (Y Y(YWYW W )W ) Y YY Y = Y = EYAERA R WW W W= W = EWEEKE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
