Transcript
PD -91535
IRL540NS/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l
D
VDSS = 100V RDS(on) = 0.044Ω
G
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF540NL) is available for lowprofile applications.
ID = 36A
S
D 2 P ak
T O -26 2
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
36 26 120 3.8 140 0.91 ± 16 310 18 14 5.0 -55 to + 175
Units A W W W/°C V mJ A mJ V/ns °C
300 (1.6mm from case )
Thermal Resistance Parameter RθJC RθJA
Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
––– –––
1.1 40
°C/W
5/13/98
IRL540NS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Min. 100 ––– ––– ––– ––– 1.0 14 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
–––
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
––– ––– –––
V(BR)DSS
IGSS
Typ. ––– 0.11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 81 39 62
Max. Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA
0.044 VGS = 10V, ID = 18A 0.053 Ω VGS = 5.0V, ID = 18A 0.063 VGS = 4.0V, ID = 15A 2.0 V VDS = V GS, ID = 250µA ––– S V DS = 25V, ID = 18A
25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 74 ID = 18A 9.4 nC VDS = 80V 38 VGS = 5.0V, See Fig. 6 and 13
––– VDD = 50V ––– ID = 18A ns ––– RG = 5.0Ω, VGS = 5.0V ––– R D = 2.7Ω, See Fig. 10
Between lead, 7.5 ––– nH and center of die contact 1800 ––– VGS = 0V 350 ––– pF VDS = 25V 170 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics IS ISM
VSD trr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 36 ––– ––– showing the A G integral reverse ––– ––– 120 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V
––– 190 290 ns TJ = 25°C, IF = 18A ––– 1.1 1.7 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 1.9mH
Uses IRL540N data and test conditions
RG = 25Ω, IAS = 18A. (See Figure 12)
ISD ≤ 18A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994.
IRL540NS/L 1000
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
100
10
2.5V
20µs PULSE WIDTH T J = 25°C
1 0.1
1
10
100
10
2.5V
20µs PULSE WIDTH T J = 175°C
1
A
100
0.1
1
V D S , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
R D S ( o n ) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
1000
TJ = 25°C TJ = 175°C
10
V D S = 50V 20µs PULSE WIDTH
1
2
4
6
8
V G S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
A
100
V D S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
10
10
A
I D = 30A
2.5
2.0
1.5
1.0
0.5
V G S = 10V
0.0 -60
-40
-20
0
20
40
60
80
100 120 140 160 180
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
A
IRL540NS/L 3000
15
V G S , Gate-to-Source Voltage (V)
V G S = 0V, f = 1MHz C iss = C gs+ C gd , C SHORTED ds C rss = C gd C oss = C ds+ C gd
C, Capacitance (pF)
C iss 2000
C oss
1000
C rss
0
A 1
10
I D = 18A V D S = 80V V D S = 50V V D S = 20V
12
9
6
3
FOR TEST CIRCUIT SEE FIGURE 13
0
100
0
V D S , Drain-to-Source Voltage (V)
40
60
80
A 100
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY RD S ( o n )
I D , Drain Current (A)
I S D , Reverse Drain Current (A)
20
100
TJ = 175°C
T J = 25°C 10
100 10µs
100µs 10 1ms
VG S = 0V
1 0.4
0.6
0.8
1.0
1.2
1.4
1.6
V S D , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
A
1.8
T C = 25°C T J = 175°C Single Pulse
1 1
10ms
A 10
100
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
1000
IRL540NS/L 40
RD
VDS VGS
I D , Drain Current (A)
D.U.T.
RG
30
+
-VDD
5.0V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit 10
VDS 90% 0 25
50
75
100
125
150
175
TC , Case Temperature ( °C) 10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50 0.20 P DM
0.10 0.1
0.01 0.00001
0.05 0.02 0.01
t1 t2
SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRL540NS/L
1 5V
L
VD S
D .U .T
RG
IA S 10V tp
D R IV E R
+ V - DD
A
0.0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
E A S , Single Pulse Avalanche Energy (mJ)
800
TOP BOTTOM
ID 7.3A 13A 18A
600
400
200
A
0 25
50
V (B R )D SS
75
100
125
150
175
Starting T J , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS Current Regulator Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF .3µF
5.0 V QGS
D.U.T.
QGD
+ V - DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRL540NS/L Peak Diode Recovery dv/dt Test Circuit +
D.U.T
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+
-
-
+
• • • •
RG
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
Driver Gate Drive D=
Period
P.W.
+ -
VDD
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
Body Diode
VDD
Forward Drop
Inductor Curent Ripple ≤ 5%
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
ISD
*
IRL540NS/L D2Pak Package Outline
1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX.
-A-
1.3 2 (.05 2) 1.2 2 (.04 8)
2
1.7 8 (.07 0) 1.2 7 (.05 0)
1
10 .1 6 (.4 00 ) R E F.
-B-
4 .6 9 (.18 5) 4 .2 0 (.16 5)
6.47 (.2 55 ) 6.18 (.2 43 )
3
1 5.49 (.6 10) 1 4.73 (.5 80)
2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 )
5.28 (.2 08 ) 4.78 (.1 88 )
3X
1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0)
0.55 (.0 22) 0.46 (.0 18)
0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 )
M
8.8 9 (.3 50 ) R E F.
1.3 9 (.0 55 ) 1.1 4 (.0 45 )
B A M
M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E
8 .89 (.35 0) 17 .78 (.70 0)
3.81 (.1 5 0) 2.0 8 (.08 2) 2X
Part Marking Information D2Pak
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
A
PART NUM BER F530S 9 24 6 9B 1M
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
2.5 4 (.100 ) 2X
IRL540NS/L Package Outline TO-262 Outline
Part Marking Information TO-262
IRL540NS/L Tape & Reel Information D2Pak
TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 )
1 .60 (.06 3) 1 .50 (.05 9)
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )
0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1)
1 .75 (.06 9 ) 1 .25 (.04 9 )
4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)
16 .10 (.63 4 ) 15 .90 (.62 6 )
F E E D D IRE C TIO N
13.50 (.532 ) 12.80 (.504 )
2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4
33 0.00 (1 4.1 73) MA X.
NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .
60.00 (2.3 62) MIN .
26 .40 (1.03 9) 24 .40 (.961 ) 3
3 0.40 (1.1 97) MAX. 4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
