Transcript
PD - 96232
IRLB8743PbF HEXFET® Power MOSFET
Applications l
Optimized for UPS/Inverter Applications
l
High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial use
l
VDSS
RDS(on) max
Qg
30V
3.2mΩ
36nC
D
G
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free
D
S
TO-220AB IRLB8743PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings Parameter
Max.
VDS
Drain-to-Source Voltage
30
VGS
± 20
ID @ TC = 25°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
110
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
78
c
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
PD @TC = 100°C
150
A
W
68 0.90
W/°C
-55 to + 175 °C
Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
i
x
Max.
–––
1.11
Case-to-Sink, Flat Greased Surface
0.5
–––
Junction-to-Ambient
–––
62
Junction-to-Case
RθCS RθJA
Parameter
300 (1.6mm from case) 10lbfxin (1.1N m)
Typ.
RθJC
h
Notes through are on page 9
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f
140
Operating Junction and Storage Temperature Range
Thermal Resistance
V
620
h Maximum Power Dissipation h
Linear Derating Factor TJ TSTG
Units
g
Units °C/W
1 04/22/09
IRLB8743PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ
Min. Typ. Max. Units 30
–––
–––
Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
––– –––
17 2.5
Gate Threshold Voltage
––– 1.35
3.5 1.8
IDSS
Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
––– –––
-7.7 –––
IGSS
Gate-to-Source Forward Leakage
––– –––
––– –––
Gate-to-Source Reverse Leakage Forward Transconductance
––– 190
––– –––
mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 40A mΩ VGS = 4.5V, ID = 32A 4.2 2.35 V VDS = VGS, ID = 100µA ––– mV/°C VDS = 24V, VGS = 0V 1.0 µA 100 VDS = 24V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 15V, ID = 32A
Total Gate Charge Pre-Vth Gate-to-Source Charge
––– –––
36 9.1
54 –––
Post-Vth Gate-to-Source Charge Gate-to-Drain Charge
––– –––
4.2 13
––– –––
Gate Charge Overdrive Switch Charge (Qgs2 + Qgd)
––– –––
13 17.2
––– –––
Output Charge Gate Resistance
–––
RDS(on) VGS(th) ∆VGS(th)/∆TJ
gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss
VGS = 0V, ID = 250µA
––– 3.2
e e
VDS = 15V nC
VGS = 4.5V ID = 32A
–––
nC
VDS = 16V, VGS = 0V
1.5 ––– –––
Ω
Turn-On Delay Time Rise Time
––– ––– –––
21 0.85 23 92
td(off) tf
Turn-Off Delay Time Fall Time
––– –––
25 36
––– –––
Ciss Coss
Input Capacitance Output Capacitance
––– –––
5110 960
––– –––
Crss
Reverse Transfer Capacitance
–––
440
–––
RG td(on) tr
V
Conditions
Drain-to-Source Breakdown Voltage
ns
pF
VDD = 15V, VGS = 4.5V ID = 32A
e
RG = 1.8Ω VGS = 0V VDS = 15V ƒ = 1.0MHz
Avalanche Characteristics Parameter EAS
Single Pulse Avalanche Energy
IAR EAR
Avalanche Current Repetitive Avalanche Energy
c
d
c
Typ. –––
Max. 310
Units mJ
––– –––
32 14
A mJ
Diode Characteristics Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode)
–––
–––
ISM
Pulsed Source Current (Body Diode)
–––
–––
VSD trr
Diode Forward Voltage Reverse Recovery Time
––– –––
––– 29
Qrr ton
Reverse Recovery Charge Forward Turn-On Time
–––
49
2
c
150
f
Conditions MOSFET symbol
A
showing the integral reverse
1.0 44
V ns
74
nC
p-n junction diode. TJ = 25°C, IS = 32A, VGS = 0V TJ = 25°C, IF = 32A, VDD = 15V di/dt = 200A/µs
620
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLB8743PbF 1000
1000
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
BOTTOM
VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
100
100
≤60µs PULSE WIDTH Tj = 25°C
3.0V
≤60µs PULSE WIDTH
3.0V
Tj = 175°C 10
10 0.1
1
10
0.1
100
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0 RDS(on) , Drain-to-Source On Resistance (Normalized)
1000 T J = 25°C
ID, Drain-to-Source Current (A)
1
T J = 175°C 100
10
VDS = 15V ≤60µs PULSE WIDTH
ID = 78A VGS = 10V
1.5
1.0
0.5
1.0 1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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-60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
3
IRLB8743PbF 100000
14.0
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 32A
C, Capacitance (pF)
C oss = C ds + C gd
10000 Ciss Coss 1000
Crss
100
12.0
VDS= 24V VDS= 15V
10.0 8.0 6.0 4.0 2.0 0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
60
80
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
10000
1000
ID, Drain-to-Source Current (A)
T J = 175°C
ISD, Reverse Drain Current (A)
40
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100
10
TJ = 25°C
1
OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100µsec 1msec
100 10msec 10 Tc = 25°C Tj = 175°C Single Pulse
VGS = 0V 0.1
DC
1 0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
20
3.0
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLB8743PbF 160
ID, Drain Current (A)
140
VGS(th) , Gate Threshold Voltage (V)
2.5
Limited By Package
120 100 80 60 40 20
2.0
1.5
ID = 100µA ID = 250µA ID = 1.0mA
1.0
0.5
0 25
50
75
100
125
150
-75 -50 -25 0
175
T C , Case Temperature (°C)
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50 0.20 0.10 0.05
0.1
0.02 0.01
0.01
τJ
R1 R1 τJ τ1
R2 R2
R3 R3
τC τ1
τ2
τ2
τ3
Ci= τi/Ri Ci i/Ri
0.001
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006
1E-005
R4 R4
τ3
τ4
τ4
Ri (°C/W)
τi (sec)
0.85073
0.006515
0.00562
8.246536
0.00099
6.148011
0.25266
0.000371
τ
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
9
1400 EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRLB8743PbF ID = 40A
8
ID TOP 11A 18A BOTTOM 32A
1200
7
1000
6 5
T J = 125°C
4 T J = 25°C
3 2
800 600 400 200 0
3
4
5
6
7
8
9
10
25
50
75
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
V DS L
20V VGS
V GS
DRIVER
RG D.U.T
RG
IAS tp
+ V - DD
125
150
175
Fig 13c. Maximum Avalanche Energy vs. Drain Current
15V
VDS
100
Starting T J , Junction Temperature (°C)
RD
D.U.T. +
-V DD
VGS
A
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
0.01Ω
Fig 13a. Unclamped Inductive Test Circuit V(BR)DSS tp
Fig 14a. Switching Time Test Circuit VDS 90%
10% VGS td(on)
I AS
Fig 13b. Unclamped Inductive Waveforms
6
tr
t d(off)
tf
Fig 14b. Switching Time Waveforms
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IRLB8743PbF D.U.T
Driver Gate Drive P.W.
+
+
-
-
*
D.U.T. ISD Waveform Reverse Recovery Current
+
RG
• • • •
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
P.W. Period VGS=10V
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
D=
Period
+
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Current Regulator Same Type as D.U.T.
Id Vds
50KΩ 12V
Vgs
.2µF .3µF
D.U.T.
+ V - DS Vgs(th)
VGS 3mA
IG
ID
Qgodr
Qgd
Qgs2 Qgs1
Current Sampling Resistors
Fig 16. Gate Charge Test Circuit
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Fig 17. Gate Charge Waveform
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IRLB8743PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRLB8743PbF TO-220AB Part Marking Information (;$03/(
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25°C, L = 0.61mH, RG = 25Ω, IAS = 32A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 78A.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. This is only applied to TO-220AB pakcage.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2009
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