Irlba3803p

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PD - 91841C IRLBA3803 HEXFET® Power MOSFET ● ● ● ● ● ● Logic-Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Fully Avalanche Rated Purchase IRLBA3803/P for solder plated option. D VDSS = 30V RDS(on) = 0.005Ω G ID = 179AV S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Super-220 is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. It has increased current handling capability over both the TO-220 and the much larger TO-247 package. This makes it ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. Super - 220 This package has also been designed to meet automotive qualification standard Q101. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyRU Avalanche CurrentQU Repetitive Avalanche EnergyQ Peak Diode Recovery dv/dt SU Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force 179 V 126V 720 270 1.8 ±16 610 71 27 5.0 -55 to + 175 Units A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) 20 N Thermal Resistance Parameter RθJC RθCS RθJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units ––– 0.5 ––– 0.55 ––– 58 °C/W 1 05/20/02 IRLBA3803 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 30 ––– ––– ––– 1.0 55 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.052 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 230 29 35 LD Internal Drain Inductance ––– 2.0 LS Internal Source Inductance ––– 5.0 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 5000 1800 880 V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mAU 0.005 VGS = 10V, ID = 71AT Ω 0.009 VGS = 4.5V, ID = 59A T V VDS = V GS, ID = 250µA ––– S VDS = 25V, ID = 71AU 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 140 ID = 71A 41 nC VDS = 24V 78 VGS = 4.5V, See Fig. 6 and 13TU ––– VDD = 15V ––– ID = 71A ––– RG = 1.3Ω ––– RD = 0.20Ω, See Fig. 10 TU D Between lead, ––– nH 6mm (0.25in.) G from package ––– S and center of die contact ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5U Source-Drain Ratings and Characteristics IS I SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Q Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 179V showing the A G integral reverse ––– ––– 720 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 71A, VGS = 0VT ––– 120 180 ns TJ = 25°C, IF = 71A ––– 450 680 nC di/dt = 100A/µs TU Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Q Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) R VDD = 15V, starting TJ = 25°C, L = 180µH RG = 25Ω, IAS = 71A. (See Figure 12) S ISD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2 T Pulse width ≤ 300µs; duty cycle ≤ 2%. U Uses IRL3803 data and test conditions. V Calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 www.irf.com IRLBA3803 1000  1000 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 100 2.7V 10 0.1 1 100 20µs PULSE WIDTH  T = 25 C 2.7V 20µs PULSE WIDTH  T = 175 C ° J 10 ° J 10 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 ° C  TJ = 175 ° C  100  V DS = 25V 20µs PULSE WIDTH 10 2.0 4.0 6.0 8.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D , Drain-to-Source Current (A)  VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP I D = 1 20 A 1.5 1.0 0.5 V G S = 10 V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T em perature (°C ) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLBA3803 8000 V GS C iss C C iss C rs s o ss 6000 C oss = = = = 15 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d V G S , G ate-to-S ource V oltage (V ) C , Capacitance (pF) 10000 4000 C rss 2000 0 10 V D S = 24 V V D S = 15 V 12 9 6 3 FO R TE S T C IRC UIT S E E FIG U R E 1 3 0 A 1 I D = 71 A 100 0 40 V D S , D rain-to-S ourc e V oltage (V ) 80 120 160 A 200 Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10000 1000 OPERATION IN THIS AREA LIMITED  BY R TJ = 175 ° C  I D , Drain Current (A) ISD , Reverse Drain Current (A) DS(on) 100 1000 TJ = 25 ° C  10 1 0.4  100us 100 V GS = 0 V  0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4  10us 2.4  1ms 10  TC = 25 ° C TJ = 175 ° C Single Pulse 1  10ms 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLBA3803 200  LIMITED BY PACKAGE RD V DS VGS 160 D.U.T. I D , Drain Current (A) RG + V - DD 120 4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 80 Fig 10a. Switching Time Test Circuit 40 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01   SINGLE PULSE (THERMAL RESPONSE) 0.01 P DM t1 t2  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLBA3803 1 5V D R IV E R L VDS D .U .T RG + V - DD IA S 20V tp 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS A E A S , S ingle P ulse A valanche E nergy (m J) 1500 TO P B O TTO M 1200 ID 29 A 5 0A 71 A 900 600 300 0 V D D = 15 V 25 50 A 75 100 125 150 175 S tarting T J , J unc tion T em perature (°C ) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 4.5 V QGS 12V .2µF .3µF QGD D.U.T. + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRLBA3803 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer S + R - - T + Q • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - V DD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLBA3803 Super-220 Package Outline Super-220 package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 8 www.irf.com This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.