Transcript
PD - 96278B
IRLML0030TRPbF VDS
30
V
VGS Max
± 20
V
RDS(on) max
27
mΩ
40
mΩ
(@VGS = 10V)
RDS(on) max (@VGS = 4.5V)
HEXFET® Power MOSFET G 1 3 D S
Micro3TM (SOT-23) IRLML0030TRPbF
2
Application(s) • Load/ System Switch
Features and Benefits Benefits
Features Low RDS(on) ( ≤ 27mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification
Lower switching losses Multi-vendor compatibility results in Easier manufacturing ⇒ Environmentally friendly Increased reliability
Absolute Maximum Ratings Symbol VDS
Parameter
Max.
Units
30
V
ID @ TA = 25°C
Drain-Source Voltage Continuous Drain Current, VGS @ 10V
5.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
4.3
IDM
Pulsed Drain Current
21
PD @TA = 25°C
Maximum Power Dissipation
1.3
PD @TA = 70°C
Maximum Power Dissipation
0.8
Linear Derating Factor
0.01
VGS
Gate-to-Source Voltage
± 20
W/°C V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
A
W
Thermal Resistance Symbol
Parameter
e
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (t<10s)
f
Typ.
Max.
–––
100
–––
99
Units °C/W
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10
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1 02/29/12
IRLML0030TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS
Parameter Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS IGSS
Min. Typ. Max. Units 30
–––
–––
–––
0.02
–––
–––
33
40
–––
22
27
1.3
1.7
2.3
–––
–––
1
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Drain-to-Source Leakage Current
V
Conditions VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA mΩ V μA nA
d = 5.2A d
VGS = 4.5V, ID = 4.2A VGS = 10V, ID
VDS = VGS, ID = 25μA VDS =24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
2.3
–––
Ω
VGS = -20V
gfs Qg
Forward Transconductance
9.5
–––
–––
S
Total Gate Charge
–––
2.6
–––
Qgs
Gate-to-Source Charge
–––
0.8
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
1.1
–––
td(on)
Turn-On Delay Time
–––
5.2
–––
VDD
tr
Rise Time
–––
4.4
–––
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
7.4
–––
tf
Fall Time
–––
4.4
–––
Ciss
Input Capacitance
–––
382
–––
Coss
Output Capacitance
–––
84
–––
Crss
Reverse Transfer Capacitance
–––
39
–––
VDS = 10V, ID = 5.2A ID = 5.2A
nC
VDS =15V
d d =15V
VGS = 4.5V
ns
RG = 6.8Ω VGS = 4.5V VGS = 0V
pF
VDS = 15V ƒ = 1.0MHz
Source - Drain Ratings and Characteristics Symbol
Parameter
IS
Continuous Source Current
ISM
(Body Diode) Pulsed Source Current
c
Min. Typ. Max. Units –––
–––
1.6 A
–––
21
VSD
(Body Diode) Diode Forward Voltage
––– –––
–––
1.0
V
trr
Reverse Recovery Time
–––
11
17
ns
Qrr
Reverse Recovery Charge
–––
4.0
6.0
nC
2
Conditions MOSFET symbol showing the integral reverse
D
G S
p-n junction diode. TJ = 25°C, IS = 1.6A, VGS = 0V
d
TJ = 25°C, VR = 15V, IF=1.6A di/dt = 100A/μs
d
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IRLML0030TRPbF 100
100
10 BOTTOM
VGS 10.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V 2.25V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
0.1 2.25V
0.1
1
10
BOTTOM
1 2.25V
≤60μs PULSE WIDTH Tj = 150°C
≤60μs PULSE WIDTH Tj = 25°C
0.01
10
0.1
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0 RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
VGS 10.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V 2.25V
VDS = 15V ≤60μs PULSE WIDTH 10
T J = 150°C
1
T J = 25°C
0.1
ID = 5.2A
VGS = 10V
1.5
1.0
0.5
1.5
2.0
2.5
3.0
3.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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4.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRLML0030TRPbF 10000
14.0
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 5.2A
C, Capacitance (pF)
C oss = C ds + C gd
1000 Ciss Coss
100
Crss
12.0
VDS= 24V VDS= 15V
10.0 8.0 6.0 4.0 2.0 0.0
10 1
10
0
100
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
4
5
6
7
10
T J = 25°C
OPERATION IN THIS AREA LIMITED BY R DS(on)
10
100μsec
1
1msec
10msec
0.1
T A = 25°C
Tj = 150°C Single Pulse
VGS = 0V
0.01
0.1 0.3
0.5
0.7
0.9
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
3
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1
2
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
T J = 150°C
1
1.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLML0030TRPbF 6
RD
V DS
ID, Drain Current (A)
5
VGS
D.U.T.
RG
+
- VDD
4 VGS
3
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
2
Fig 10a. Switching Time Test Circuit
1 VDS 90%
0 25
50
75
100
125
150
T A , Ambient Temperature (°C) 10% VGS
Fig 9. Maximum Drain Current Vs. Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
1000 100
D = 0.50 0.20 0.10 0.05 0.02 0.01
10 1 0.1 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
140 130
ID = 5.2A
120 110 100 90 80 70 60
T J = 125°C
50 40 30
T J = 25°C
20 2
4
6
8
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
10
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRLML0030TRPbF 50 45 40 Vgs = 4.5V 35 30 Vgs = 10V 25 20 0
10
20
30
40
50
ID, Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
QG
VGS
QGS
50KΩ 12V
.2μF .3μF
QGD
D.U.T.
+ V - DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRLML0030TRPbF 100
80
2.0
Power (W)
VGS(th), Gate threshold Voltage (V)
2.5
1.5
1.0
ID = 25uA ID = 250uA
60
40
20
0.5
0.0 -75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs. Junction Temperature
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0 1E-005 0.0001 0.001
0.01
0.1
1
10
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRLML0030TRPbF Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches)
DIMENSIONS A
6
5
SYMBOL
D
A A1 A2 b c D E E1 e e1 L L1 L2
A A2
3 6
C
E
E1 1
2
0.15 [0.006] M C B A 0.10 [0.004] C
A1
5
B
3X b
e
0.20 [0.008] M C B A
NOTES:
e1
H 4
L1
Recommended Footprint
c
L2
0.972 0.950
0.802
MILLIMETERS
INCHES
MIN
MAX
MIN
0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0
1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8
MAX
0.0004 %6& %6& REF BSC 0
8
2.742 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
3X L 7 1.900
Micro3 (SOT-23/TO-236AB) Part Marking Information Notes : This part marking information applies to devices produced after 02/26/2001 DATE CODE MARKING INSTRUCTIONS
DAT E CODE PART NUMBER
LEAD F REE
WW = (1-26) IF PRECE DE D BY LAS T DIGIT OF CALE NDAR YEAR YE AR
Cu WIRE HALOGEN F REE
LOT CODE
X = PART NUMBER CODE REF ERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0100 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML9301 R = IRLML9303
S = IRLML6244 T = IRLML6246 U = IRLML6344 V = IRLML6346 W = IRF ML8244 X = IRLML2244 Y = IRLML2246 Z = IRF ML9244
Note: A line above the work week (as s hown here) indicates Lead - F ree.
2011 2012 2013 2014 2015 2016 2017 2018 2019 2020
2001 2002 2003 2004 2005 2006 2007 2008 2009 2010
Y 1 2 3 4 5 6 7 8 9 0
WORK WE EK
W
01 02 03 04
A B C D
24 25 26
X Y Z
WW = (27-52) IF PRE CEDED BY A LET T ER YE AR 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020
2001 2002 2003 2004 2005 2006 2007 2008 2009 2010
Y A B C D E F G H J K
WORK WE EK
W
27 28 29 30
A B C D
50 51 52
X Y Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLML0030TRPbF Micro3™ (SOT-23)Tape & Reel Information Dimensions are shown in millimeters (inches)
2.05 ( .080 ) 1.95 ( .077 )
1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 ) 1.65 ( .065 )
3.55 ( .139 ) 3.45 ( .136 )
4.1 ( .161 ) 3.9 ( .154 )
1.32 ( .051 ) 1.12 ( .045 )
8.3 ( .326 ) 7.9 ( .312 )
0.35 ( .013 ) 0.25 ( .010 )
1.1 ( .043 ) 0.9 ( .036 )
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRLML0030TRPbF Orderable part number
Package Type
IRLML0030TRPbF
Micro3 (SOT-23)
Standard Pack Form Quantity Tape and Reel 3000
Note
Qualification information† Qualification level
Moisture Sensitivity Level
Cons umer†† (per JE DE C JE S D47F Micro3 (SOT-23)
RoHS compliant
†††
guidelines ) MS L1
(per IPC/JE DE C J-S T D-020D††† ) Yes
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/2012
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