Transcript
IRLML6302PbF-1 VDS RDS(on) max (@VGS = -4.5V)
Qg (typical) ID (@TA = 25°C)
-20
V
0.60
Ω
2.4
nC
-0.78
A
HEXFET® Power MOSFET G 1 3 D S
2
Micro3TM
Features Industry-standard pinout SOT-23 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
Base Part Number
Package Type
IRLML6302TRPbF-1
Micro3™ (SOT-23)
⇒
Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Standard Pack Form Quantity Tape and Reel 3000
Orderable Part Number IRLML6302TRPbF-1
Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C V GS dv/dt TJ, TSTG
Max.
Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Units
-0.78 -0.62 -4.9 540 4.3 ± 12 -5.0 -55 to + 150
A mW mW/°C
V V/ns °C
Thermal Resistance Parameter
RθJA
1
Maximum Junction-to-Ambient
Typ.
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
Max. 230
Units °C/W
October 28, 2014
IRLML6302PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th) g fs
Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS Qg Q gs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -20 -0.70 0.56
Typ. -4.9 2.4 0.56 1.0 13 18 22 22 97 53 28
Max. Units Conditions V VGS = 0V, ID = -250µA mV/°C Reference to 25°C, ID = -1mA 0.60 VGS = -4.5V, ID = -0.61A Ω 0.90 VGS = -2.7V, ID = -0.31A -1.5 V VDS = VGS, ID = -250µA S VDS = -10V, ID = -0.31A -1.0 VDS = -16V, VGS = 0V µA -25 VDS = -16V, VGS = 0V, TJ = 125°C -100 VGS = -12V nA 100 VGS = 12V 3.6 ID = -0.61A 0.84 nC VDS = -16V 1.5 VGS = -4.5V, See Fig. 6 and 9 VDD = -10V ID = -0.61A ns RG = 6.2Ω RD = 16Ω, See Fig. 10 VGS = 0V pF VDS = -15V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
IS I SM
VSD trr Q rr
Min. Typ. Max. Units
-0.54
-4.9
––– ––– –––
––– 35 26
-1.2 53 39
A V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = -0.61A, VGS = 0V TJ = 25°C, IF = -0.61A di/dt = -100A/μs
D
G S
Notes:
Repetitive rating; pulse width
limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -0.61A, di/dt ≤ 76A/µs, VDD≤V(BR)DSS, TJ ≤ 150°C
2
www.irf.com © 2014 International Rectifier
Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec.
Submit Datasheet Feedback
October 28, 2014
IRLML6302PbF-1
10
10
VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V
-ID , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
1
0.1
-1.5V
0.01 0.1
20μs PULSE WIDTH TJ = 25°C A
1
0.1
-1.5V 20μs PULSE WIDTH TJ = 150°C 0.1
10
1
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
-ID , Drain-to-Source Current (A)
1
0.01
10
TJ = 25°C TJ = 150°C
1
0.1
VDS = -10V 20μs PULSE WIDTH
0.01 1.5
2.0
2.5
3.0
3.5
4.0
4.5
A
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics 3
VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP
TOP
www.irf.com © 2014 International Rectifier
A
I D = -0.61A
1.5
1.0
0.5
V GS = -4.5V
0.0 -60
-40
-20
0
20
40
60
80
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback
A
100 120 140 160
October 28, 2014
IRLML6302PbF-1
C, Capacitance (pF)
160 140
Ciss
120
Coss
10
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
-V GS , Gate-to-Source Voltage (V)
180
100 80
Crss
60 40 20 0 1
10
100
A
I D = -0.61A VDS = -16V
8
6
4
2
0 0.0
-VDS , Drain-to-Source Voltage (V)
1.0
2.0
3.0
A
4.0
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
10
10
-I D , Drain Current (A)
-ISD , Reverse Drain Current (A)
FOR TEST CIRCUIT SEE FIGURE 9
1
TJ = 150°C TJ = 25°C 0.1
OPERATION IN THIS AREA LIMITED BY R DS(on)
100μs
1 1ms
10ms
VGS = 0V
0.01 0.4
0.6
0.8
1.0
1.2
A
1.4
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage 4
www.irf.com © 2014 International Rectifier
TA = 25°C TJ = 150°C Single Pulse
0.1 1
A
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback
October 28, 2014
IRLML6302PbF-1
QG
-4.5V
QGS
RD
V DS VGS
QGD
D.U.T.
RG
-
+
VG
VDD
-4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Charge
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T.
VDS 90%
50KΩ .2μF
12V
.3μF
D.U.T.
+VDS
10% VGS
VGS -3mA
td(on) IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50 0.20 0.10 0.05
10
0.02 PDM
0.01
t1
SINGLE PULSE (THERMAL RESPONSE)
1
0.1 0.00001
t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 28, 2014
IRLML6302PbF-1 Peak Diode Recovery dv/dt Test Circuit +
D.U.T
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+
-
-
+
**
RG
• dv/dt controlled by RG • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test
VGS*
+ -
*
VDD
* Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W.
Period
D=
P.W. Period
[VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current
Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
[ISD]
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS 6
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 28, 2014
IRLML6302PbF-1 Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) S Y M B O L
6 5
D
3
6 ccc
2
C B A
D E E1 e
5
B
e
A A1 A2 b c
E
E1
1
DIME NSIONS MILLIME T ERS MAX MIN 1.12 0.89 0.10 0.01 0.88 1.02 0.30 0.50 0.08 0.20 3.04 2.80 2.10 2.64 1.40 1.20 0.95 BSC 1.90 BSC 0.40 0.60 0.25 BS C 0° 8° 0.10 0.20 0.15
e1 L L1 0 aaa
e1
bbb ccc 4
INCHES MIN MAX .036 .044 .0004 .0039 .035 .040 .0119 .0196 .0032 .0078 .111 .119 .083 .103 .048 .055 .0375 BSC .075 BSC .0158 .0236 .0118 BSC 0° 8° .004 .008 .006
H
A A2
L1 3X b
A1
bbb
aaa C C A B
3 S URF
0
7
3X L
RECOMMENDED FOOT PRINT
NOT ES 1. DIMENS IONING AND TOLERANCING PER AS ME Y14.5M-1994.
0.972 3X [.038]
2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES. 2.742 [.1079]
3. CONTROLLING DIMENSION: MILLIMET ER. 4 DAT UM PLANE H IS LOCAT ED AT T HE MOLD PART ING LINE. 5 DAT UM A AND B T O BE DET ERMINED AT DAT UM PLANE H. 6 DIMENSIONS D AND E1 ARE MEAS URED AT DAT UM PLANE H. 7 DIMENSION L IS T HE LEAD LENGTH FOR S OLDERING T O A SUBS T RAT E. 8. OUT LINE CONFORMS T O JEDEC OUT LINE T O-236AB .
0.95 [.0375]
3X
0.802 [.031]
1.90 [.075]
Micro3 (SOT-23 / TO-236AB) Part Marking Information W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
DATE CODE PART NUMBER
LEAD FREE
INDUS TRIAL VERS ION Cu WIRE HALOGEN FREE
LOT CODE
X = PART NUMBER CODE REFERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0100 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML9301 R = IRLML9303
S = IRLML6244 T = IRLML6246 U = IRLML6344 V = IRLML6346 W = IRFML8244 X = IRLML2244 Y = IRLML2246 Z = IRFML9244
Note: A line above the work week (as s hown here) indicates Lead - Free.
YEAR 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020
2001 2002 2003 2004 2005 2006 2007 2008 2009 2010
Y 1 2 3 4 5 6 7 8 9 0
WORK WEEK
W
01 02 03 04
A B C D
24 25 26
X Y Z
W = (27-52) IF PRECEDED BY A LETTER YEAR 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020
2001 2002 2003 2004 2005 2006 2007 2008 2009 2010
Y A B C D E F G H J K
WORK WEEK
W
27 28 29 30
A B C D
50 51 52
X Y Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 28, 2014
IRLML6302PbF-1 Micro3™ Tape & Reel Information (Dimensions are shown in millimeters (inches)) 2.05 ( .080 ) 1.95 ( .077 )
1.6 ( .062 ) 1.5 ( .060 )
TR
FEED DIRECTION
1.32 ( .051 ) 1.12 ( .045 )
1.85 ( .072 ) 1.65 ( .065 )
4.1 ( .161 ) 3.9 ( .154 )
3.55 ( .139 ) 3.45 ( .136 )
4.1 ( .161 ) 3.9 ( .154 )
8.3 ( .326 ) 7.9 ( .312 )
0.35 ( .013 ) 0.25 ( .010 )
1.1 ( .043 ) 0.9 ( .036 )
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ †
Qualification information
Industrial
Qualification level
(per JE DEC JE S D47F
Moisture Sensitivity Level
Micro3™ (SOT-23)
RoHS compliant
††
guidelines) MS L1 ††
(per JE DE C J-S TD-020D ) Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release
Revision History Date 10/28/2014
Comment • Updated partmarking to reflect Industrial partmarking on page 7.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 28, 2014
