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Irlr8729pbf

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November 2018
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Industrial & lab equipment Electrical equipment & supplies Circuit protection Voltage regulators

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PD - 97352B IRLR8729PbF IRLU8729PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant HEXFET® Power MOSFET VDSS RDS(on) max Qg 30V 8.9mΩ 10nC D S S D G G D-Pak I-Pak IRLR8729PbF IRLU8729PbF G D S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units 30 V VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 58 41 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current ID @ TC = 25°C ID @ TC = 100°C c PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C Maximum Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range f f A 260 g g W 55 27 W/°C °C 0.37 -55 to + 175 Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient g Typ. Max. ––– 2.73 ––– 50 ––– 110 Units °C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 11 www.irf.com 1 11/23/09 IRLR/U8729PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Min. Typ. Max. Units V Conditions Drain-to-Source Breakdown Voltage 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 21 6.0 ––– 8.9 Gate Threshold Voltage ––– 1.35 8.9 1.8 mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 25A mΩ 11.9 VGS = 4.5V, ID = 20A 2.35 V VDS = VGS, ID = 25µA VGS = 0V, ID = 250µA e e Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 20V VGS = -20V gfs Qg Forward Transconductance Total Gate Charge 91 ––– ––– 10 ––– 16 S VDS = 15V, ID = 20A Qgs1 Qgs2 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 2.1 1.3 ––– ––– nC VDS = 15V VGS = 4.5V Qgd Gate-to-Drain Charge ––– 4.0 ––– ID = 20A Qgodr Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 2.6 4.8 ––– ––– See Fig. 16 Output Charge Gate Resistance ––– 6.3 ––– nC 1.6 10 47 2.7 ––– ––– Ω Turn-On Delay Time Rise Time ––– ––– ––– td(off) tf Turn-Off Delay Time Fall Time ––– ––– 11 10 ––– ––– Ciss Input Capacitance ––– 1350 ––– Coss Crss Output Capacitance Reverse Transfer Capacitance ––– ––– 280 120 ––– ––– Qsw Qoss RG td(on) tr ns VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 20A e RG = 1.8Ω See Fig. 14 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current EAR Repetitive Avalanche Energy c d c Typ. ––– ––– Max. 74 20 Units mJ A ––– 5.5 mJ Diode Characteristics Parameter IS Min. Typ. Max. Units Continuous Source Current (Body Diode) ––– ––– ISM Pulsed Source Current (Body Diode) ––– ––– VSD trr Diode Forward Voltage Reverse Recovery Time ––– ––– ––– 16 Qrr ton Reverse Recovery Charge ––– 19 2 c Forward Turn-On Time 58 f Conditions MOSFET symbol A showing the integral reverse 1.0 24 V ns 29 nC p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 300A/µs 260 e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRLR/U8729PbF 1000 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 10 1 ≤60µs PULSE WIDTH BOTTOM 10 2.5V Tj = 25°C 2.5V ≤60µs PULSE WIDTH Tj = 175°C 0.1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V 100 T J = 175°C 10 T J = 25°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 ID = 25A VGS = 10V 1.5 1.0 0.5 1 2 3 4 5 6 7 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRLR/U8729PbF 10000 5.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 20A VGS, Gate-to-Source Voltage (V) C rss = C gd C, Capacitance (pF) C oss = C ds + C gd Ciss 1000 Coss Crss 3.0 2.0 1.0 0.0 100 1 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 4 6 8 10 12 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 2 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100 T J = 175°C 10 T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 100 1msec 10msec 10 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 1 0.1 0.0 0.5 1.0 1.5 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS= 24V VDS= 15V 4.0 2.0 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLR/U8729PbF 60 2.5 VGS(th) , Gate threshold Voltage (V) Limited By Package ID, Drain Current (A) 50 40 30 20 10 2.0 1.5 ID = 25µA ID = 50µA ID = 100µA 1.0 0 0.5 25 50 75 100 125 150 175 -75 -50 -25 0 T C , Case Temperature (°C) 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ1 R2 R2 τ2 τ2 τC τC Ri (°C/W) τi (sec) 1.251 0.000513 1.481 0.004337 C i= τi/R i Ci= τi/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U8729PbF DRIVER L VDS D.U.T RG + V - DD IAS 20V 0.01Ω tp VGS Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A EAS , Single Pulse Avalanche Energy (mJ) 300 15V ID 4.4A 6.5A BOTTOM 20A TOP 250 200 150 100 50 0 tp 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS V DS Fig 12b. Unclamped Inductive Waveforms V GS RG Current Regulator Same Type as D.U.T. RD D.U.T. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 50KΩ 12V Fig 14a. Switching Time Test Circuit .2µF .3µF D.U.T. + V - DS VDS 90% VGS 3mA IG ID Current Sampling Resistors Fig 13. Gate Charge Test Circuit 6 10% VGS td(on) tr t d(off) tf Fig 14b. Switching Time Waveforms www.irf.com IRLR/U8729PbF Driver Gate Drive P.W. + D= Period P.W. Period VGS=10V D.U.T - + - Circuit Layout Considerations D.U.T. ISD Waveform • Low Stray Inductance • Ground Plane Reverse • Low Leakage Inductance Recovery Body Diode Forward Current Transformer Current + Current RG di/dt • • • • * D.U.T. VDS Waveform Re-Applied V Voltage + dv/dt controlled by RG DD Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test Diode Recovery dv/dt Body Diode VDD Forward Drop - Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform www.irf.com 7 IRLR/U8729PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information (;$03/( 7+,6,6$1,5)5 3$57180%(5 :,7+$66(0%/< ,17(51$7,21$/ /27&2'( ,5)5 $ 5(&7,),(5 $66(0%/('21:: /2*2 ,17+($66(0%/

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